We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator in a non-local geometry. Our experiments reveal that permalloy can have a higher spin injection and detection efficiency to that of platinum, owing to the ASHE. We also demonstrate the tunability of the ASHE via the orientation of the permalloy magnetization, thus creating new possibilities for spintronic applications.
Coherent quantum transport in ferromagnetic/ semiconductor/ ferromagnetic junctions is studied theoretically within the Landauer framework of ballistic transport. We show that quantum coherence can have unexpected implications for spin injection and that some intuitive spintronic concepts which are founded in semi-classical physics no longer apply: A quantum spin-valve (QSV) effect occurs even in the absence of a net spin polarized current flowing through the device, unlike in the classical regime. The converse effect also arises, i.e. a zero spin-valve signal for a non-vanishing spin-current.…
We develop a microscopic formulation of dynamical spin injection in heterostructure comprising nonmagnetic metals in contact with ferromagnets. The spin pumping current is expressed in terms of Green's function of the nonmagnetic metal attached to the ferromagnet where a precessing magnetization is induced. The formulation allows for the inclusion of spin-orbit coupling and disorder. The Green's functions involved in the expression for the current are expressed in real-space lattice coordinates and can thus be efficiently computed using recursive methods.
We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field originating from the ordinary and anomalous Hall effects, respectively. We suggest that the experimentally observed deviations from this dependence is caused by the inverse spin Hall effect (ISHE) and develop a phenomenological theory, which predicts a unique nonlinear dependence of the ISHE contribution on the external magnetic field. Perfect agreement between…
We propose an unconventional type of Hall effect in a topological Dirac semimetal with ferromagnetic electrodes. The topological Dirac semimetal itself has time-reversal symmetry, whereas attached ferromagnetic electrodes break it, causing the large Hall response. This induced Hall effect is a characteristic of the helical surface/edge states that arise in topological materials, such as topological Dirac semimetals or quantum spin Hall insulators. We compute the Hall conductance/resistance and the Hall angle by using a lattice model with four-terminal geometry. For topological Dirac semimetals…
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in dil…
We have shown that the study of topological aspects of the underlying geometry in a ferromagnetic spin system gives rise to an intrinsic Berry phase. This real space Berry phase arises due to the spin rotations of conducting electrons which can be manifested as a further contribution in anomalous Hall effect.
We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to the ferromagnetic layer. The polarity of the Hall voltage is reversed upon switching the FM moment to the opposite direction, thus promising a useful readback mechanism for memory or logic applicatio…
We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance (FMR) dynamics. The Oersted field from the current also generates an FMR signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space, the density of magnetic moments. The corresponding gradient leads to a current-dependent diffusion process of the magnetization. In order to describe this effect, the dynamics of the magnetization of a ferromagnetic single domain is reconsidered in the framework of the thermokinetic theory of mesoscopic systems. Assuming an Onsager cross-coefficient that coup…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall ef…
An array of spin torque oscillators (STOs) for practical applications such as pattern recognition was recently proposed, where several STOs are connected by a common nonmagnet. In this structure, in addition to the electric and/or magnetic interactions proposed in previous works, the STOs are spontaneously coupled to each other through the nonmagnetic connector, due to the injection of spin current. Solving the Landau-Lifshitz-Gilbert equation numerically for such system consisting of three STOs driven by the spin Hall effect, it is found that both in-phase and antiphase synchronization of the…
We consider the injection of a controlled charge from a normal metal into an edge state of the fractional quantum Hall effect, with a time-dependent voltage $V(t)$. Using perturbative calculations in the tunneling limit, and a chiral Luttinger liquid model for the edge state, we show that the electronic correlations prevent the charge fluctuations to be divergent for a generic voltage pulse $V(t)$. This is in strong contrast with the case of charge injection in a normal metal, where this divergence is present. We show that explicit formul{ae} for the mean injected charge and its fluctuations c…
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessa…
We consider theoretically a current flowing perpendicular to interfaces of a spin-valve type ferromagnetic metallic junction. For the first time an effective approach is investigated to calculate a simultaneous action of the two current effects, namely, the nonequilibrium longitudinal spin injection and the transversal spin-transfer surface torque. Dispersion relation for fluctuations is derived and solved. Nonlinear problem is solved about steady state arising due to instability for a thick enough free layer.
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the mag…
We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contributioin $\sim {\bm j}_{\rm SH}^{\phantom{\dagger}} \cdot \nabla {\bm n}$ in the first order in SOI, where ${\bm j}_{\rm SH}^{\phantom{\dagger}}$ is the spin Hall current driven by an external electric field. This is a reaction to inverse spin Hall effect driven by spin motive force in a ferromagnet.
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
We theoretically investigate the anomalous Hall effect in a system of dense-packed ferromagnetic grains in the metallic regime. Using the formalism recently developed for the conventional Hall effect in granular metals, we calculate the residual anomalous Hall conductivity $σ_{xy}$ and resistivity $ρ_{xy}$ and weak localization corrections to them for both skew-scattering and side-jump mechanisms. We find that, unlike for homogeneously disordered metals, the scaling relation between $ρ_{xy}$ and the longitudinal resistivity $ρ_{xx}$ does not hold. The weak localization corrections, however, ar…
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to c…
Inverse spin Hall effect (ISHE) in ferromagnetic metals (FM) can also be used to detect the spin current generated by longitudinal spin Seebeck effect in a ferromagnetic insulator YIG. However, anomalous Nernst effect(ANE) in FM itself always mixes in the thermal voltage. In this work, the exchange bias structure (NiFe/IrMn)is employed to separate these two effects. The exchange bias structure provides a shift field to NiFe, which can separate the magnetization of NiFe from that of YIG in M-H loops. As a result, the ISHE related to magnetization of YIG and the ANE related to the magnetization …
We predict a specific type of charge Hall effect in undoped ferromagnetic graphene that is generated by the spin Hall mechanism in the absence of an external magnetic field. The essential feature is the so-called spin chiral configuration of the spin subbands in such a magnetic material where carriers with opposite spin direction are of different type of electron-like or hole-like. Within the semiclassical theory of spin-orbital dynamics of electrons, we obtain that a longitudinal electric field can produce a spin-orbit transverse current of pure charge with no polarization of the spin and the…
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization …
We study the anomalous Hall effect in monolayers of transition-metal dichalcogenides 2H-$MX_2$ ($M$=Mo, W, and $X$=S, Se, Te) under a proximity effect of ferromagnetic substrate. If a proximity-induced exchange field is introduced, the spin-polarized energy bands in $K$ and $K'$ valleys are shifted in the opposite directions, and it causes the Hall effect by breaking time-reversal symmetry. The induced Hall effect is the most prominent in the valence band which has a large intrinsic spin splitting. Moreover, we find that tilting the magnetization from the perpendicular direction gives rise to …
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit field has recently led to the experimental demonstration of a spin transistor logic device. The aim of the work presented here is to demonstrate in one device the iSHE detection combined with an elec…
The question is investigated whether the anomalous Hall effect (AHE) in Fe films is due to skew scattering or side jump. For this purpose sandwiches of FeIn are investigated in which the conduction electrons carry their drift velocity across the interface. This yields an additional AHE conductance $ΔG_{xy}$ whose dependence on the In mean free path is used to determine the mechanism of the AHE in the Fe film. The structure of the Fe film is kept constant.
The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the equilibrium value are the current density and the spin polarization of the probe material, while the relation between the probe diameter and the spin diffusion length influences the result very weakly, to a certain extent. A possibility is shown of reaching inverse population of the spin subbands at distances from the probe boundary comparable with the spin diffusi…
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system…
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2…
We report a novel mechanism for the electrical injection and detection of out-of-plane spin accumulation via the anomalous spin Hall effect (ASHE), where the direction of the spin accumulation can be controlled by manipulating the magnetization of the ferromagnet. This mechanism is distinct from the spin Hall effect (SHE), where the spin accumulation is created along a fixed direction parallel to an interface. We demonstrate this unique property of the ASHE in nanowires made of permalloy (Py), to inject and detect out-of-plane spin accumulation in a magnetic insulator, yttrium iron garnet (YIG…
We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.
We predict a quantum spin Hall effect (QSHE) in the ferromagnetic graphene under a magnetic field. Unlike the previous QSHE, this QSHE appears in the absence of any spin-orbit interaction, thus, arrived from a different physical origin. The previous QSHE is protected by the time-reversal (T) invariance. This new QSHE is protected by the CT invariance, where C is the charge conjugation operation. Due to this QSHE, the longitudinal resistance exhibits quantum plateaus. The plateau values are at 1/2, 1/6, 3/28, ..., (in the unit of $h/e^2$), depending on the filling factors of the spin-up and spi…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via ohmic conduction. For detection a second ferromagnet can be used as drain. We studied submicron lateral spin valve junctions, based on high mobility InAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy as ferromagnetic electrodes. In the standard geometry it is very difficult to separate true spin injection from other effects, including local…
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance …
We start closing a gap in the comparison of experimental and theoretical data associated with the spin Hall effect. Based on a first-principles characterization of electronic structure and a semiclassical description of electron transport, we compute the skew-scattering contribution to the transverse spin and charge currents generated by spin and anomalous Hall effect in a Co/Cu multilayer system doped with Bi impurities. The fact that the created currents cross the interface between the two materials strongly influences the efficiency of charge to spin current conversion, as demonstrated by o…
Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanow…
We propose an effective low-energy theory for ferromagnetic Hall states. It describes the charge degrees of freedom, on the edge, by a (1 + 1) dimensional chiral boson theory, and the spin degrees of freedom by the (2 + 1)dimensional quantum ferromagnet theory in the spin-wave approximation. The usual chiral boson theory for spinless electrons is modified to include the charge degrees of freedom with spin. Our total, bulk plus edge, effective action is gauge invariant and we find a generalized "chiral anomaly" in this case. We describe two, charged and neutral, sets of edge spin-wave solutions…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE a…
We demonstrate a combined frequency and time domain investigation of injection-locked, constriction-based spin Hall nano-oscillators by Brillouin light scattering (BLS) and time-resolved magneto-optical Kerr effect (TR-MOKE). This was achieved by applying an alternating current in the GHz regime in addition to the direct current which drives auto-oscillations in the constriction. In the frequency domain, we analyze the width of the locking range, the increase in intensity and reduction in linewidth as a function of the applied direct current. Then we show that the injection locking of the auto…
Within the scheme of quantum rate equations, we investigate the spin-resolved transport through a double quantum dot system with four ferromagnetic terminals. It is found that the injection efficiency of spin-polarized electrons can be significantly improved compared with single dot case. When the magnetization in one of four ferromagnetic terminals is antiparallel with the other three, the polarization rate of the current through one dot can be greatly enhanced, accompanied by the drastic decrease of the current polarization rate through the other one. The mechanism is the exchange interactio…
We propose an effect whereby an electric current along the interface between a ferromagnetic and normal metal leads to injection of pure spin current into the normal metal, if the magnetization-direction in the ferromagnet varies along the direction of current. For the specific example of a ferromagnetic domain wall, we compute the inverse spin-Hall effect voltage this spin current gives rise to when injected into a Pt layer. Furthermore, we show that this pure spin current leads to modification of the parameters that govern spin transfer and current-driven domain-wall motion, which can be use…
We study the stationary state of Hall devices composed of a load circuit connected to the lateral edges of a Hall-bar. We follow the approach developed in a previous work (Creff et al. J. Appl. Phys 2020) in which the stationary state of a ideal Hall bar is defined by the minimum power dissipation principle. The presence of both the lateral circuit and the magnetic field induces the injection of a current: the so-called Hall current. Analytical expressions for the longitudinal and the transverse currents are derived. It is shown that the efficiency of the power injection into the lateral circu…
We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normalmetallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device ba…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states of the uniform magnetization. The current-dependent effective energy barrier due to spin-transfer from the current to the magnetic layer is measured. The comparison between the results obtained with Ni nanowires of 6 $μ$m length and 60 nm diameter, and Co (10 nm)/Cu (10 nm)/Co(30 nm) nanometric pillars of about 40 nm in diameter refined the characterization o…
We present theoretically the thermal Hall effect of magnons in a ferromagnetic lattice with a Kekulé-O coupling (KOC) modulation and a Dzyaloshinskii-Moriya interaction (DMI). Through a strain-based mechanism for inducing the KOC modulation, we identify four topological phases in terms of the KOC parameter and DMI strength. We calculate the thermal magnon Hall conductivity ${κ^{xy}}$ at low temperature in each of these phases. We predict an unconventional conductivity due to a non-zero Berry curvature emerging from band proximity effects in the topologically trivial phase. We find sign changes…
We suggest a series of transport experiments on spin precession in quantum dots coupled to one or two ferromagnetic leads. Dot spin states are created by spin injection and analyzed via the linear conductance through the dot, while an applied magnetic field gives rise to the Hanle effect. Such a Hanle experiment can be used to determine the spin lifetime in the quantum dot, to measure the spin injection efficiency into the dot, as well as proving the existence of intrinsic spin precession which is driven by the Coulomb interaction.
We present a theory of coherent quantum transport in ferromagnetic/ non-magnetic/ ferromagnetic heterojunctions. We predict quantum coherence to give rise to a quantum spin valve effect that, unlike its familiar classical analog, occurs even in the absence of a net spin current through the heterostructure. Thus the relationship between spin and charge transport is qualitatively different in the presence of quantum interference than in the (semi)classical regime. This has important implications for the design of quantum coherent spintronic devices and the interpretation of experiments.
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the …
We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/YIG bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through …
Unsteady nonlinear magnetization dynamics are studied in an easy-plane ferromagnetic channel subject to spin injection at one edge. The model Landau-Lifshitz equation is known to support steady-state solutions, termed dissipative exchange flows (DEFs) or spin superfluids. In this work, by means of numerical simulations and theoretical analysis, we provide a full description of the injection-induced, large-amplitude, nonlinear magnetization dynamics up to the steady state. The dynamics prior to reaching steady state are driven by spin injection, the perpendicular applied magnetic field, the exc…
We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band structure and the weight distributions of eigenstates, we demonstrate that the attachment of a metallic thin-film on the 3DTI can shift the topologically non-trivial state into the metal layers due to the hybridization of bands around the original Dirac point. By introducing the magnetic exchange interaction in the thin-film layers, we compute the anomalous…
High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2-xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-indepe…
Spin-orbit torques in bilayers of ferromagnetic and nonmagnetic materials hold promise for energy efficient switching of magnetization in nonvolatile magnetic memories. Previously studied spin Hall and Rashba torques originate from spin-orbit interactions within the nonmagnetic material and at the bilayer interface, respectively. Here we report a spin-orbit torque that arises from planar Hall current in the ferromagnetic material of the bilayer and acts as either positive or negative magnetic damping. This planar Hall torque exhibits unusual biaxial symmetry in the plane defined by the applied…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (nu = 1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.
We propose a new scaling law for anomalous Hall effect in ferromagnetic thin films by distinguishing three scattering sources, namely, bulk impurity, phonon, and more importantly a rough surface. This new scaling law fits the recent experimental data excellently with constant coefficients that are independent of temperature and film thickness. This is in stark constrast with previous scaling laws that use temperature/thickness dependent fitting coefficients, and is a strong indicator that this law captures the essential physics. By intepretating the experiments for Fe, Co, and Ni with this new…
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization meas…
We study the topological Hall effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin diffusion equation is derived, which contains an additional source term associated with the gradient of the emergent magnetic field that arises, and its solution shows that spin accumulation may build up in the vicinity of the magnetic skyrmions. We show that the spin accumulation gives rise to a spin polarized diffusion current that in general suppresses that bulk topological Hall current. Only when the spin dif…
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
