We theoretically investigate the anomalous Hall effect in a system of dense-packed ferromagnetic grains in the metallic regime. Using the formalism recently developed for the conventional Hall effect in granular metals, we calculate the residual anomalous Hall conductivity $σ_{xy}$ and resistivity $ρ_{xy}$ and weak localization corrections to them for both skew-scattering and side-jump mechanisms. We find that, unlike for homogeneously disordered metals, the scaling relation between $ρ_{xy}$ and the longitudinal resistivity $ρ_{xx}$ does not hold. The weak localization corrections, however, are found to be in agreement with those for homogeneous metals. We discuss recent experimental data on the anomalous Hall effect in polycrystalline iron films in view of the obtained results.
We study, using simulations the dynamical properties of complex ferromagnetic granular materials. The system of grains is modeled by a disordered two-dimensional lattice in which the grains are embedded, while the magnitude and direction of the easy axis are random. Using the monte-carlo method we track the dynamics of the magnetic moments of the grains. We observe a transition of the system from a macroscopic blocked (ferromagnetic) phase at low temperature in which the grain's magnetic moment do not flip to the other direction to an unblocked (superparamagnetic) phase at high temperature in …
We present magnetoresistance (MR) measurements performed on magnetic tunnel junctions in which one of the electrodes is a granular ferromagnetic film. These junctions exhibit a zero field resistance dip. The dip magnitude depends on the size of the grains. We interpret these results as a consequence of the orange peel effect between the continuous ferromagnetic film and the magnetic grains. The coupling is found to be much stronger than that between continuous ferromagnetic layers.
We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field originating from the ordinary and anomalous Hall effects, respectively. We suggest that the experimentally observed deviations from this dependence is caused by the inverse spin Hall effect (ISHE) and develop a phenomenological theory, which predicts a unique nonlinear dependence of the ISHE contribution on the external magnetic field. Perfect agreement between…
We propose an unconventional type of Hall effect in a topological Dirac semimetal with ferromagnetic electrodes. The topological Dirac semimetal itself has time-reversal symmetry, whereas attached ferromagnetic electrodes break it, causing the large Hall response. This induced Hall effect is a characteristic of the helical surface/edge states that arise in topological materials, such as topological Dirac semimetals or quantum spin Hall insulators. We compute the Hall conductance/resistance and the Hall angle by using a lattice model with four-terminal geometry. For topological Dirac semimetals…
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in dil…
We have shown that the study of topological aspects of the underlying geometry in a ferromagnetic spin system gives rise to an intrinsic Berry phase. This real space Berry phase arises due to the spin rotations of conducting electrons which can be manifested as a further contribution in anomalous Hall effect.
We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to the ferromagnetic layer. The polarity of the Hall voltage is reversed upon switching the FM moment to the opposite direction, thus promising a useful readback mechanism for memory or logic applicatio…
We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance (FMR) dynamics. The Oersted field from the current also generates an FMR signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall ef…
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessa…
We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a new contributioin $\sim {\bm j}_{\rm SH}^{\phantom{\dagger}} \cdot \nabla {\bm n}$ in the first order in SOI, where ${\bm j}_{\rm SH}^{\phantom{\dagger}}$ is the spin Hall current driven by an external electric field. This is a reaction to inverse spin Hall effect driven by spin motive force in a ferromagnet.
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g. Fe$_3$Sn$_2$, Co$_3$Sn$_2$S$_2$, and Mn$_3$Sn), which show the quantum anomalous Hall effect. The kagome layers show a strong magnetic anisotropy and a large magnetoresistance depending on their magnetic texture. These domain-wall magnetoresistances are expected to be robust against disorder and observed irrespective of the domain-wall thickness, in contrast to c…
Inverse spin Hall effect (ISHE) in ferromagnetic metals (FM) can also be used to detect the spin current generated by longitudinal spin Seebeck effect in a ferromagnetic insulator YIG. However, anomalous Nernst effect(ANE) in FM itself always mixes in the thermal voltage. In this work, the exchange bias structure (NiFe/IrMn)is employed to separate these two effects. The exchange bias structure provides a shift field to NiFe, which can separate the magnetization of NiFe from that of YIG in M-H loops. As a result, the ISHE related to magnetization of YIG and the ANE related to the magnetization …
We predict a specific type of charge Hall effect in undoped ferromagnetic graphene that is generated by the spin Hall mechanism in the absence of an external magnetic field. The essential feature is the so-called spin chiral configuration of the spin subbands in such a magnetic material where carriers with opposite spin direction are of different type of electron-like or hole-like. Within the semiclassical theory of spin-orbital dynamics of electrons, we obtain that a longitudinal electric field can produce a spin-orbit transverse current of pure charge with no polarization of the spin and the…
We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization …
We study the anomalous Hall effect in monolayers of transition-metal dichalcogenides 2H-$MX_2$ ($M$=Mo, W, and $X$=S, Se, Te) under a proximity effect of ferromagnetic substrate. If a proximity-induced exchange field is introduced, the spin-polarized energy bands in $K$ and $K'$ valleys are shifted in the opposite directions, and it causes the Hall effect by breaking time-reversal symmetry. The induced Hall effect is the most prominent in the valence band which has a large intrinsic spin splitting. Moreover, we find that tilting the magnetization from the perpendicular direction gives rise to …
We report a novel spin injection and detection mechanism via the anomalous Hall effect in a ferromagnetic metal. The anomalous spin Hall effect (ASHE) refers to the transverse spin current generated within the ferromagnet. We utilize the ASHE and its reciprocal effect to electrically inject and detect magnons in a magnetic insulator in a non-local geometry. Our experiments reveal that permalloy can have a higher spin injection and detection efficiency to that of platinum, owing to the ASHE. We also demonstrate the tunability of the ASHE via the orientation of the permalloy magnetization, thus …
The question is investigated whether the anomalous Hall effect (AHE) in Fe films is due to skew scattering or side jump. For this purpose sandwiches of FeIn are investigated in which the conduction electrons carry their drift velocity across the interface. This yields an additional AHE conductance $ΔG_{xy}$ whose dependence on the In mean free path is used to determine the mechanism of the AHE in the Fe film. The structure of the Fe film is kept constant.
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2…
We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.
We predict a quantum spin Hall effect (QSHE) in the ferromagnetic graphene under a magnetic field. Unlike the previous QSHE, this QSHE appears in the absence of any spin-orbit interaction, thus, arrived from a different physical origin. The previous QSHE is protected by the time-reversal (T) invariance. This new QSHE is protected by the CT invariance, where C is the charge conjugation operation. Due to this QSHE, the longitudinal resistance exhibits quantum plateaus. The plateau values are at 1/2, 1/6, 3/28, ..., (in the unit of $h/e^2$), depending on the filling factors of the spin-up and spi…
We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance …
We start closing a gap in the comparison of experimental and theoretical data associated with the spin Hall effect. Based on a first-principles characterization of electronic structure and a semiclassical description of electron transport, we compute the skew-scattering contribution to the transverse spin and charge currents generated by spin and anomalous Hall effect in a Co/Cu multilayer system doped with Bi impurities. The fact that the created currents cross the interface between the two materials strongly influences the efficiency of charge to spin current conversion, as demonstrated by o…
Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanow…
We propose an effective low-energy theory for ferromagnetic Hall states. It describes the charge degrees of freedom, on the edge, by a (1 + 1) dimensional chiral boson theory, and the spin degrees of freedom by the (2 + 1)dimensional quantum ferromagnet theory in the spin-wave approximation. The usual chiral boson theory for spinless electrons is modified to include the charge degrees of freedom with spin. Our total, bulk plus edge, effective action is gauge invariant and we find a generalized "chiral anomaly" in this case. We describe two, charged and neutral, sets of edge spin-wave solutions…
We present theoretically the thermal Hall effect of magnons in a ferromagnetic lattice with a Kekulé-O coupling (KOC) modulation and a Dzyaloshinskii-Moriya interaction (DMI). Through a strain-based mechanism for inducing the KOC modulation, we identify four topological phases in terms of the KOC parameter and DMI strength. We calculate the thermal magnon Hall conductivity ${κ^{xy}}$ at low temperature in each of these phases. We predict an unconventional conductivity due to a non-zero Berry curvature emerging from band proximity effects in the topologically trivial phase. We find sign changes…
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the …
We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/YIG bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through …
We study the effects of localization on the Hall transport in a granular system at large tunneling conductance $g_{T}\gg 1$ corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array vanishes identically, $\de ρ_{xy}^{WL}=0$. This result is in agreement with the one for ordinary disordered metals. Being due to an exact cancellation, our result holds for arbitrary relevant values of temperature T and magnetic field H, both in the ``homogeneous'' regime of very low T and H correspondin…
We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band structure and the weight distributions of eigenstates, we demonstrate that the attachment of a metallic thin-film on the 3DTI can shift the topologically non-trivial state into the metal layers due to the hybridization of bands around the original Dirac point. By introducing the magnetic exchange interaction in the thin-film layers, we compute the anomalous…
High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2-xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-indepe…
Spin-orbit torques in bilayers of ferromagnetic and nonmagnetic materials hold promise for energy efficient switching of magnetization in nonvolatile magnetic memories. Previously studied spin Hall and Rashba torques originate from spin-orbit interactions within the nonmagnetic material and at the bilayer interface, respectively. Here we report a spin-orbit torque that arises from planar Hall current in the ferromagnetic material of the bilayer and acts as either positive or negative magnetic damping. This planar Hall torque exhibits unusual biaxial symmetry in the plane defined by the applied…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (nu = 1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.
We propose a new scaling law for anomalous Hall effect in ferromagnetic thin films by distinguishing three scattering sources, namely, bulk impurity, phonon, and more importantly a rough surface. This new scaling law fits the recent experimental data excellently with constant coefficients that are independent of temperature and film thickness. This is in stark constrast with previous scaling laws that use temperature/thickness dependent fitting coefficients, and is a strong indicator that this law captures the essential physics. By intepretating the experiments for Fe, Co, and Ni with this new…
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization meas…
We study the topological Hall effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin diffusion equation is derived, which contains an additional source term associated with the gradient of the emergent magnetic field that arises, and its solution shows that spin accumulation may build up in the vicinity of the magnetic skyrmions. We show that the spin accumulation gives rise to a spin polarized diffusion current that in general suppresses that bulk topological Hall current. Only when the spin dif…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
We have observed a superparamagnetic to ferromagnetic transition in films of isolated Ni grains covered by non-magnetic overlayers. The magnetoresistance (MR) of the films was measured as a function of the overlayer thickness. Initially, the granular Ni films exhibited negative MR curves peaked at H=0. As different materials were deposited onto the grains hysteresis developed in the MR. This behavior is ascribed to an increase of the typical domain size due to magnetic coupling between grains. The strength of the inter-grain coupling is found to correlate with the magnetic susceptibility of th…
Ferromagnetic transitions between quantum Hall states with different polarization at a fixed filling factor can be studied by varying the ratio of cyclotron and Zeeman energies in tilted magnetic field experiments. However, an ability to locally control such transitions at a fixed magnetic field would open a range of attractive applications, e.g. formation of a reconfigurable network of one-dimensional helical domain walls in a two-dimensional plane. Coupled to a superconductor, such domain walls can support non-Abelian excitation. In this article we report development of heterostructures wher…
We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. The theory is able to account for both dc and magneto-optical Hall conductivities with no adjustable parameters.
We calculate the Hall conductivity $\sig_{xy}$ and resistivity $ρ_{xy}$ of a granular system at large tunneling conductance $g_{T}\gg 1$. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula $ρ_{xy}=H/(n^* e c)$, where $n^*$ differs from the carrier density $n$ inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature $T$ correction to $ρ_{xy}$ in the range $\Ga \lesssim T …
We have measured the Hall coefficient $R_H$ and the electrical conductivity $σ$ of a series of ultrathin indium tin oxide films between 2 and 300 K. A robust $R_H$\,$\propto$\,ln$T$ law is observed in a considerably wide temperature range of 2 and $\sim$120 K. This ln$T$ dependence is explained as originated from the electron-electron interaction effect in the presence of granularity, as newly theoretically predicted. Furthermore, we observed a $σ$\,$\propto$\,ln$T$ law from 3 K up to several tens K, which also arose from the Coulomb interaction effect in inhomogeneous systems. These results p…
A silicon micromechanical torsional oscillator is used to measure the hysteresis loops of two manganite La_0.67Ca_0.33MnO_3 nanotubes at different temperatures, applying an external field along its main axes. These structures are composed of nanograins with a ferromagnetic core surrounded by a dead layer. Micromagnetic calculations based on the stochastic Landau-Lifshitz-Gilbert equation, are performed to validate a simple model that allows for quantitatively describing the ferromagnetic behavior of the system. Further simulations are used to analyze the experimental data more in depth and to …
We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with th…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew-scattering of carriers by disorder near the crossover to localization.
We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the ferroelectric (FE) layer. The coupling is due to screening of Coulomb interaction in the granular film by the FE layer. Below the FE Curie temperature the magnetization has hysteresis as a function of electric field. Below the magnetic ordering temperature the polarization has hysteresis as a function of magnetic field. We study the magneto-electric coupling for weak an…
The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperatures to observe the QAHI due to issues such as the added disorder with ferromagnetic dopants. Another promising scheme is using the magnetic proximity effect with a magnetic insulator to magnetize the to…
We do a search for topological insulators which are associated with ferromagnetic ordering and show anomalous quantum Hall effect, among transition metal oxide superlattices taking the parent compounds as LaAlO3 and SrTiO3. Among the various superlattices which are studied here, (LaAlO3)10/(LaOsO3)2 exhibits a ferromagnetic ground state with a topologically non-trivial energy gap when a spin-orbit interaction is turned on. The study of transverse conductivity shows that the system has quantized Hall conductivity inside the topological energy gap without applying any external magnetic field. Th…
We present a theory of Hall effect in granular systems at large tunneling conductance $g_{T}\gg 1$. Hall transport is essentially determined by the intragrain electron dynamics, which, as we find using the Kubo formula and diagrammatic technique, can be described by nonzero diffusion modes inside the grains. We show that in the absence of Coulomb interaction the Hall resistivity $ρ_{xy}$ depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula $ρ_{xy}=H/(n^* e c)$, where $n^*$ differs from the carrier density $n$ inside the grains by a n…
The orbital structure of the quantum Hall ferromagnetic states in the zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA, etc.\ stackings) is determined by the exchange interaction with all levels, including deep-lying states in the Dirac sea. This exchange field favors orbitally coherent states with a U(1) orbital symmetry if the filling factor $ν$ is not a multiple of the number of layers. If electrons fill the orbital sector of a fixed spin/valley component to one-half, e.g., at $ν=\pm3,\pm1$ in the bilayer and at $ν=\pm2,\pm6$ in the ABCA four-layer, there is a transitio…
General relations for nonequilibrium spin transport at a magnetic junction between a normal metal and a ferromagnetic insulator are derived from the quantum fluctuation theorem. They include the extended Onsager relations between the spin conductance and the spin-current noise that hold for nonequilibrium states driven by an external current. These relations, that are valid for a general setup of spin Hall magnetoresistance, provide a comprehensive viewpoint for understanding of unidirectional spin Hall magnetoresistance in insulating ferromagnetic junctions.
The measured Hall angle in a ferromagnetic nanomagnet shows a substantial non-linear dependence on an external magnetic field, which cannot be explained by adopted mechanisms of the Ordinary and Anomalous (AHE) Hall effects implying a linear plus constant dependence on the external magnetic field. We suggest that there is an additional non-linear contribution from the Inverse Spin Hall effect (ISHE). The significant contribution of ISHE in a ferromagnet is supported by perfect agreement of experiment with a phenomenological theory of ISHE. We observed different dependencies of AHE and ISHE on …
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in t…
The electrical detection of spin torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FMR. Here we carry out a careful analysis of electrical signals of the st-FMR in a HM/ferromagnet (HM/FM) bilayer with an arbitrary magnetic anisotropy. The FM magnetization is driven by two radio-frequ…
We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are $\sim$700\,nm and $\sim$25\,nm thick, respectively. For each film, the conductivity increases with decreasing temperature from 300\,K to $T_{\rm max}$, where $T_{\rm max}$ is the temperature at which the conductivity reaches its maximum. Below $T_{\rm max}$, the conductivity decreases with decreasing temperature. Both the conductivity and Hall coefficient va…
