The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the equilibrium value are the current density and the spin polarization of the probe material, while the relation between the probe diameter and the spin diffusion length influences the result very weakly, to a certain extent. A possibility is shown of reaching inverse population of the spin subbands at distances from the probe boundary comparable with the spin diffusion length.
We consider theoretically a current flowing perpendicular to interfaces of a spin-valve type ferromagnetic metallic junction. For the first time an effective approach is investigated to calculate a simultaneous action of the two current effects, namely, the nonequilibrium longitudinal spin injection and the transversal spin-transfer surface torque. Dispersion relation for fluctuations is derived and solved. Nonlinear problem is solved about steady state arising due to instability for a thick enough free layer.
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the mag…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
We constructed a quasi-analytical self-consistent model of the stripline-based broadband ferromagnetic resonance (FMR) measurements of ferromagnetic films. Exchange-free description of magnetization dynamics in the films allowed us to obtain simple analytical expressions. They enable quick and efficient numerical simulations of the dynamics. With this model we studied the contribution of radiation losses to the ferromagnetic resonance linewidth, as measured with the stripline FMR. We found that for films with large conductivity of metals the radiation losses are significantly smaller than for …
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicu…
The asymmetry of the modal profiles for dipole-exchange spin waves propagating in in-plane magnetized ferromagnetic films at a right angle to the applied magnetic field has been investigated theoretically. It was found that in the large-magnetic moment ferromagnetic metallic films with typical thicknesses 10-60 nm the fundamental mode of the spectrum is localized at the surface opposite to the surface of localization of the exchange-free Damon-Eshbach surface wave. This anomalous localization of the wave does not affect the non-reciprocity of spin wave excitation by microstrip and coplanar tra…
Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, we study in detail the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film. A clear correlation between both magnitudes is observed but we find, through a careful modelling of the magnetization and the weak localization measurements, that such correspondence can be explained by the effects of th…
We present room temperature ferromagnetic resonance (FMR) studies of polycrystalline ||Pt/10 nm Cu/t Co/10 nm Cu/Pt|| films as a function of Co layer thickness (1 < t < 10 nm) grown by evaporation and magnetron sputtering. FMR was studied with a high frequency broadband coplanar waveguide (up to 25 GHz) using a flip-chip method. The resonance field and the linewidth were measured as a function of the ferromagnetic layer thickness. The evaporated films exhibit a lower magnetization density (Ms = 1131 emu/cm^3) compared to the sputtered films (Ms= 1333 emu/cm^3), with practically equal perpendic…
We report the piezoresisitivity in magnetic thin films of FeGa and their use for fabricating self transducing microcantilevers. The actuation occurs as a consequence of both the ferromagnetic and magnetostrictive property of FeGa thin films, while the deflection readout is achieved by exploiting the piezoresisitivity of these films. This self-sensing, self-actuating micromechanical system involves a very simple bilayer structure, which eliminates the need for the more complex piezoelectric stack that is commonly used in active cantilevers. Thus, it potentially opens opportunities for remotely …
The large curvature effects on micromagnetic energy of a thin ferromagnetic film with nonlocal dipolar energy are considered. We predict that the dipolar interaction and surface curvature can produce perpendicular anisotropy which can be controlled by engineering a special type of periodic surface shape structure. Similar effects can be achieved by a significant surface roughness in the film. We show that in general the anisotropy can point in an arbitrary direction depending on the surface curvature. We provide simple examples of these periodic surface structures to demonstrate how to enginee…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for the germanide films. This difference is attributed to the different hybridization of electronic states …
Spin dynamics of a metallic ferromagnetic film imbedded between normal metal layers is studied using the spin-pumping theory of Tserkovnyak et al. [Phys. Rev. Lett. 88, 117601 (2002)]. The scattering matrix for this structure is obtained using a spin-dependent potential with quantum well in the ferromagnetic region. Owing to multiple reflections in the well, the excess Gilbert damping and the gyromagnetic ratio exhibit quantum oscillations as a function of the thickness of the ferromagnetic film. The wavelength of the oscillations is given by the depth of the quantum well. For iron film imbedd…
We investigate the magnetization dynamics through the magnetoimpedance effect in ferromagnetic NiFe/Cu/Co films. We observe that the magnetoimpedance response is dependent on the thickness of the non-magnetic Cu spacer material, a fact associated to the kind of the magnetic interaction between the ferromagnetic layers. Thus, we present an experimental study on asymmetric magnetoimpedance in ferromagnetic films with biphase magnetic behavior and explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the thickness of the non-magne…
Ferromagnetic resonance has been used to study the magnetic properties and magnetization dynamics of polycrystalline Fe$_{1-x}$V$_{x}$ alloy films with $0\leq x < 0.7$. Films were produced by co-sputtering from separate Fe and V targets, leading to a composition gradient across a Si substrate. FMR studies were conducted at room temperature with a broadband coplanar waveguide at frequencies up to 50 GHz using the flip-chip method. The effective demagnetization field $4 πM_{\mathrm{eff}}$ and the Gilbert damping parameter $α$ have been determined as a function of V concentration. The results are…
We investigate the interlayer exchange coupling in Fe/MgO/Fe and Fe/MgO/Co systems with magnetic Fe nanoclusters embedded in the MgO spacer. Samples are grown by molecular beam epitaxy (MBE) and utilize wedged MgO films to independently vary the film thickness and the position of the Fe nanoclusters. Depending on the position of the Fe nanoclusters, the bilinear coupling (J1) exhibits strong variations in magnitude and can even switch between antiferromagnetic and ferromagnetic. This effect is explained by the magnetic coupling between the ferromagnetic films and the magnetic nanoclusters. Int…
Ferromagnetic vortices deliver robust out-of-plane magnetization at extremely small scales. Their handling and creation therefore has high potential to become a necessary ingredient for future data storage technologies in order to keep up with the pace of growing information density demands. In this study we show that by using one step nanolithography method, we are able to create ferromagnetic vortex lattices in thin nickel films. The necessary control of the magnetic stray field at the domain edges was achieved by actively modifying the ferromagnetic thin film anisotropic properties at nanom…
Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. A broadband FMR setup has been used to investigate the origin of the enhanced linewidth in Ni$|$Co multilayer films with PMA. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane. Irradiation of the film with Helium ions decreases the PM…
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.
Electrical spin injection from ferromagnetic $δ$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $δ$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.
The Dzyaloshinskii-Moriya interaction (DMI) is a chiral interaction that favors formation of domain walls. Recent experiments and ab initio calculations show that there are multiple ways to modify the strength of the interfacially induced DMI in thin ferromagnetic films with perpendicular magnetic anisotropy. In this paper we reveal theoretically the effects of spatially varied DMI on the magnetic state in thin films. In such heterochiral 2D structures we report several emergent phenomena, ranging from the equilibrium spin canting at the interface between regions with different DMI, over parti…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
We report the electromotive force (EMF) properties generated in 3d-transition ferromagnetic metal (FM = Fe, Co, and Ni80Fe20) films themselves under their ferromagnetic resonance (FMR). For Fe and Co films, the EMF due to the anomalous-Hall effect is dominantly generated under their FMR. Meanwhile, for a Ni80Fe20 film, the EMF due to the inverse spin-Hall effect in the Ni80Fe20 film itself under the FMR is mainly generated. This tendency is qualitatively explained with differences of the spin polarization, the spin Hall conductivity, the anomalous Hall conductivity, the magnetization saturatio…
We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The responsible spin current for switching is estimated from the experiment to be about 200 $μ$A, which is reasonable compared with the values obtained for conventional pillar structures. Interestingly the switching always occurs from anti-parallel to parallel in the particle/injector magnetic conf…
We develop an advanced analytical model for calculating the broadband stripline ferromagnetic resonance (FMR) response for metallic ferromagnetic films, taking into account the exchange interaction as well as the exchange boundary conditions at the film surface. This approach leads to simple analytical expressions in the Fourier space. As a result, a numerical code which implements inverse Fourier transform of these equations is very quick. This allows us to explore a wide space of parameters as numerical examples of application of this theory. In particular, we investigate the joint effect of…
We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these non-local measurements, an obvious MR effect was observed at room temperature; and the MR effect was ascribed to magnetization reversal of ferromagnetic electrodes. This result is a direct demonstration of spin injection into a graphene thin film. Furthermore, this is the first report of spin injection into molecules at room temperature.
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a (Ga,Fe)Sb / BiSb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,…
Magnetic skyrmions are promising candidates as information carriers in a new generation of memories. How to generate and stabilize skyrmions is essential for their successful application to technology. Here we theoretically demonstrate that arrays of skyrmions can be imprinted in ultrathin ferromagnetic films in large numbers by bringing a magnetic nanostructured template close to the film. Two kind of templates, allowed by present-day nanotechnologies, are studied: arrays of ferromagnetic nanorods and superconducting vortices. Skyrmions are generated when exposing magnetic films to the templa…
We report a new spin-injection effect found for a manganite using a specially fabricated sample. A wire of La0.7Sr0.3MnO3 was patterned by means of focused ion beam etching, and the central part was subsequently irradiated with Ga+ ions lightly. The ferromagnetic Curie temperature was reduced locally by the irradiation from Tc to Tc', and thus a sequential ferromagnetic/paramagnetic/ferromagnetic structure was realized along the wire between Tc and Tc'. The injection of spin-polarized current from the ferromagnetic manganite into the paramagnetic part rendered the latter ferromagnetic and more…
Joint influence of two effects, namely, nonequilibrium spin injection by current, and current induced surface torque, on spin-valve type ferromagnetic metallic junctions is considered theoretically. The CPP configuration is assumed. The consideration is based on solving a coupled set of equations of motion for the mobile electron and lattice magnetizations. Boundary conditions are derived from the total magnetization flux continuity condition. A dispersion relation is derived for current dependent spin-wave fluctuations. The fluctuations become unstable under current density exceeding some thr…
The non-uniform standing spin-wave modes in thin magnetic films and nanostructures provide important information about surfaces and buried interfaces. Very often they are lacking in the recorded ferromagnetic resonance spectra for symmetry reasons. In this work we experimentally demonstrate that by direct injection of microwave currents into an array of Permalloy nanostripes using a microscopic microwave coaxial to coplanar adaptor one can efficiently excite non-uniform standing spin wave modes with odd symmetry. The proposed method is quick and allows easy spatial mapping of magnetic properti…
Peculiarities of ferromagnetic resonance response of conducting magnetic bi-layer films of nanometric thicknesses excited by microstrip microwave transducers have been studied theoretically. Strong asymmetry of the response has been found. Depending on the order of layers with respect to the transducer either the first higher-order standing spin wave mode, or the fundamental mode shows the largest response. Film conductivity and lowered symmetry of microwave fields of such transducers are responsible for this behavior. Amplitude of which mode is larger also depends on the driving frequency. Th…
It is shown theoretically that a giant magnetoelectric susceptibility exceeding 10^-6 s/m may be achieved in the ferromagnetic/ferroelectric epitaxial systems via the magnetization rotation induced by an electric field applied to the substrate. The predicted magnetoelectric anomaly results from the strain-driven spin-reorientation transitions in ferromagnetic films, which take place at experimentally accessible misfit strains in CoFe2O4 and Ni films.
Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen source. Magnetization measurements were carried out by a superconducting quantum interference device at the temperatures between 1.8K and 300K with magnetic field applied parallel to the film plane up to 7T. The magnetic-field dependence of magnetization of a (Ga,Mn)N film at 300K were ferromagnetic, while a GaN film showed Pauli paramagnetism like behaviour. The Curie temperatures of a (Ga,Mn)N film was estimated a…
Ferromagnetic metal-organic semiconductor (FM-OSC) hybrid interfaces have shown to play an important role for spin injection in organic spintronics. Here, 11,11,12,12-tetracyanonaptho-2,6-quinodimethane (TNAP) is introduced as an interfacial layer in Co-OSCs heterojunction with an aim to tune the spin injection. The Co/TNAP interface is investigated by use of X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS), near edge X-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD). Hybrid interface states (HIS) are observed at Co/TNAP interface resulting from ch…
We use the continuum micromagnetic framework to derive the formulas for compact skyrmion lifetime due to thermal noise in ultrathin ferromagnetic films with relatively weak interfacial Dzyaloshinskii-Moriya interaction. In the absence of a saddle point connecting the skyrmion solution to the ferromagnetic state, we interpret the skyrmion collapse event as ``capture by an absorber'' at microscale. This yields an explicit Arrhenius collapse rate with both the barrier height and the prefactor as functions of all the material parameters, as well as the dynamical paths to collapse.
Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechani…
The broadband microstrip ferromagnetic resonance technique has been applied for detection and characterization of a magnetic inhomogeneity in a film sample. In the case of a 100nm thick Permalloy film an additional magnetically depleted top sub-layer, practically unidentifiable by the conventional ferromagnetic resonance setup, has been detected and characterized. These results have been confirmed by Brillouin light scattering spectroscopy revealing the fact that the optical properties of the additional sub-layer do not differ much from those of the bulk of the film. Subsequent characterizatio…
We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy an…
A coplanar waveguide shorted in one end is proposed, designed, and implemented successfully to measure the properties of magnetic thin films as a part of the vector network analyzer ferromagnetic resonance (VNA-FMR) spectroscopy set-up. Its simple structure, potential applications and easy installation inside the cryostat chamber made it advantageous especially for low-temperature measurements. It provides a wide band of frequencies in the gigahertz range essential for FMR measurements. Our spectroscopy set-up with short-circuited coplanar waveguide has been used to extract Gilbert damping coe…
Second order perturbed Heisenberg Hamiltonian was employed to study the variation of energy of ferromagnetic thick films with demagnetization factor. Under the influence of demagnetization factor given by =6.6, the sc(001) film with 10000 layers can be easily oriented in 0.6 radians direction for the values of energy parameters used in this report. Easy direction of thick fcc(001) film with 10000 layers was determined at 0.66 radians, when the demagnetization factor is given by =2.6. The energy of sc(001) thick film is larger than that of fcc(001) thick film. But the energy curve of fcc(001) t…
Magnetic properties of thin films differs from that of the corresponding bulk materials and show novel physics as a result of their reduced size and dimensionality. Profound changes in magnetic properties can also result with exchange bias between the interface of the thin films of different materials. Here we present Fe$_3$O$_4$, Gd$_5$Si$_4$ and Fe$_3$O$_4$-Gd$_5$Si$_4$ bilayer thin films of varying thicknesses were prepared by RF Magnetron sputtering of Fe$_3$O$_4$ and Gd$_5$Si$_4$ targets on silicon substrates in high vacuum. Their magnetization was measured at room temperature in fields o…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The ferromagnetic-paramagnetic transition temperature, Tc, depends on the Mn concentration of the film. At low temperatures, the magnetization increases with increasing of magnetic field, implying that a par…
In this work we constructed a two-dimensional numerical model for calculation of the stripline ferromagnetic resonance (FMR) response of metallic ferromagnetic films. We also conducted numerical calculations by using this software. The calculations demonstrated that the eddy current contribution to the FMR response decreases with a decrease in the stripline width. The most important manifestations of the conductivity (eddy current) effect are excitation of the higher-order standing spin waves across the film thickness in the materials for which the standing spin wave peaks would be absent in c…
The magnetic easy axis orientation was studied by the third order perturbed Heisenberg Hamiltonian. Ferromagnetic CoPt/AlN multilayer thin films with number of layers N=11, 16 and 21 synthesized on fused quartz substrates using dc magnetron sputtering technique have been employed as experimental data. According to experimental research performed by some other researchers, easy axis of these fcc structured ferromagnetic films is oriented in the plane of the film at one particular temperature. Average value of out of plane spin component was plotted against temperature in order to determine the …
The physical properties of manganites depend strongly on sample morphology, probably due to strain. We investigate the influence of NdGaO3 substrates on the limit of the ferromagnetic-metallic phase field in La1-xCaxMnO3, doping with x=1% resolution. Films with x=0.40 show a metal-insulator transition, but the ferromagnetic volume fraction is half the spin aligned value. Films with x=0.41 are similar but the metal-insulator transition is not always seen. Films with x=0.42, 0.43, 0.44, 0.45 are insulating, and the magnetization is dramatically reduced. The observed phase boundary indicates wher…
Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent with the high spin state Co2+ in this compound recently established by spectroscopic methods. Consequently, its originally large magneto-optical response is further enhanced.
For the first time, we show that unipolar fatigue does occur in antiferroelectric capacitors, confirming the predictions of a previous work [Appl. Phys. Lett., 94, 072901 (2009)]. We also show that unipolar fatigue in antiferroelectrics is less severe than bipolar fatigue if the driving field is of the same magnitude. This phenomenon has been attributed to the switching-induced charge injection, the main cause for polarization fatigue in ferroelectric and antiferroelectric materials. Other evidences for polarization fatigue caused by the switching-induced charge injection from the nearby elect…
In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such ballistic FM/I/FM/I/2DEG junction. Our treatment is based on the free-electron scattering theory. It is found that due to quantum interference effect, the magnitude and sign of the current polarization exhibits periodical oscillating behavior with variation of the thickness of the middle FM metal layer or its exchange energy strength. For some suitable parame…
Model combinatorial films (CFs) which host a pure superconductor adjacent to a ferromagneticsuperconducting hybrid film (HF) are manufactured for the study of the influence of ferromagnetic nanoparticles (FNs) on the nucleation of superconductivity. Careful resistance measurements were performed simultaneously on two different sites of the CFs. Enhancement of superconductivity and magnetic memory effects were observed only on the hybrid site of the CFs but were absent on their purely superconducting part. Our results give direct proof that the FNs modulate the superconducting order parameter i…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic film…
We report Ferromagnetic Resonance Force Microscopy (FMRFM) experiments on a justaposed continuous films of permalloy and cobalt. Our studies demonstrate the capability of FMRFM to perform local spectroscopy of different ferromagnetic materials. Theoretical analysis of the uniform resonance mode near the edge of the film agrees quantitatively with experimental data. Our experiments demonstrate the micron scale lateral resolution in determining local magnetic properties in continuous ferromagnetic samples.
Although pinning of domain walls in ferromagnets is ubiquitous, the absence of an appropriate characterization tool has limited the ability to correlate the physical and magnetic microstructures of ferromagnetic films with specific pinning mechanisms. Here, we show that the pinning of a magnetic vortex, the simplest possible domain structure in soft ferromagnets, is strongly correlated with surface roughness, and we make a quantitative comparison of the pinning energy and spatial range in films of various thickness. The results demonstrate that thickness fluctuations on the lateral length scal…
The ferromagnetic properties of epitaxial La$_{0.5}$Sr$_{0.5}$CoO$_3$ thin films have been studied. The magnetic transition is affected by both strain and finite thickness. We have used a series of films of different thickness and on different substrates in order to quantitatively determine the change in Curie temperature contributed by each effect. The phase diagram of T$_C$ versus in-plane strain suggests that the ferromagnetic transition temperature is suppressed by tensile strain and enhanced by compressive strain. The general method of separating strain and finite thickness effects should…
Inertial magnetization dynamics have been predicted at ultrahigh speeds, or frequencies approaching the energy relaxation scale of electrons, in ferromagnetic metals. Here we identify inertial terms to magnetization dynamics in thin Ni$_{79}$Fe$_{21}$ and Co films near room temperature. Effective magnetic fields measured in high-frequency ferromagnetic resonance (115-345 GHz) show an additional stiffening term which is quadratic in frequency and $\sim$ 80 mT at the high frequency limit of our experiment. Our results extend understanding of magnetization dynamics at sub-picosecond time scales.
All the simulations were carried out for sc(001) film with three (N=3) layers. The effect of applied magnetic field and stress induced anisotropy on energy of ultra-thin ferromagnetic films has been investigated using Heisenberg Hamiltonian with second order perturbation. The energy becomes minimums at certain values of angles, applied magnetic field and stress, by indicating that film can be easily oriented in theses certain directions by applying particular applied magnetic field or stress. For example, when applied magnetic field perpendicular to film plane is 3.6, the film can be easily or…
