Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.
A theoretical model is presented for the phonon limited mobility of the Dirac-Fermion gas in a three-dimensional (3D) Dirac semimetal Cd$_3$As$_2$ considering scattering from both the acoustic and the optical phonons. Screening effects are taken into account and it is found that they lead to a significant enhancement of the mobility. Simple analytical equations and power laws are obtained in both the Bloch-Gruneisen and equipartition regimes. The dependence of mobility on the temperature $T$ and the electron density $n_e$ is investigated. It is found that optical phonon limited mobility $μ_{op…
We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electric…
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attributed to the large anisotropic orbital magnetoresistance that stems from the ultrahigh mobility. Furthermore, the mobility-enhanced current jetting effects are found to strongly deform the line shape …
High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnetic field magnetotransport experiments. The exceptionally high-quality SrRuO3 films were grown by state-of-the-art oxide thin film growth technologies driven by machine learning algorithm. The quantum …
The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-h…
Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of …
The electronic properties of $π$-conjugated two-dimensional (2D) polymers near the Fermi level are determined by structural topology and chemical composition. Thus, tight-binding (TB) calculations of the corresponding fundamental network can be used to explore the parameter space to find configurations with intriguing properties before designing the the atomistic 2D polymer network. The vertex-transitive \textbf{fes} lattice, which is also called square-octagon lattice, is rich in interesting topological features including Dirac points and flat bands. Herein, we study its electronic and topolo…
Transport of electrons at high electric fields is investigated in an intrinsic three-dimensional Dirac semimetal cadmium arsenide, considering the scattering of electrons from acoustic and optical phonons. Screening and hot phonon effect are taken in to account. Expressions for the hot electron mobility $μ$ and power loss $P$ are obtained as a function of electron temperature $T_e$. The dependence of drift velocity $v_d$ on electric field $E$ and electron density $n_e$ has been studied. Hot phonon effect is found to set in the saturation of $v_d$ at relatively low $E$ and significantly degrade…
α-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-quality α-Sn remains a challenge, which limits our understanding of its quantum transport properties and device applications. Here, we present epitaxial growth of α-Sn on InSb (001) with the highest quality thus far and reveal that it is a topological Dirac semimetal (TDS) by quantum transport investigations together with first-principles calculations. We re…
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole …
In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band wi…
We report the physical properties of orthorhombic o-CuMnAs single crystal, which is predicted to be a topological Dirac semimetal with magnetic ground state and inversion symmetry broken. o-CuMnAs exhibits an antiferromagnetic transition with TN ~ 312 K. Further characterizations of magnetic properties suggest that the AFM order may be canted with the spin orientation in the bc plane. Small isotropic MR and linearly field-dependent Hall resistivity with positive slope indicate that single hole-type carries with high density and low mobility dominate the transport properties of o-CuMnAs. Furthe…
We present the systematic de Haas-van Alphen (dHvA) quantum oscillations studies on the recently discovered topological Dirac semimetal pyrite PtBi2 single crystals. Remarkable dHvA oscillations were observed at field as low as 1.5 T. From the analyses of dHvA oscillations, we have extracted high quantum mobility, light effective mass and phase shift factor for Dirac fermions in pyrite PtBi2. From the angular dependence of dHvA oscillations, we have mapped out the topology of the Fermi surface and identified additional oscillation frequencies which were not probed by SdH oscillations.
The study of electronic properties in topological systems is one of the most fascinating topics in condensed matter physics, which has generated enormous interests in recent times. New materials are frequently being proposed and investigated to identify their non-trivial band structure. While sophisticated techniques such as angle-resolved photoemission spectroscopy have become popular to map the energy-momentum relation, the transport experiments lack any direct confirmation of Dirac and Weyl fermions in a system. From band structure calculations, VAl$_{3}$ has been proposed to be a type II t…
Efficient photocatalytic CO2 Reduction to C2+ Products with Pt1-xPdxSn4 Dirac Nodal Arc Semimetal
Sun Yat-sen University（中山大学）；Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences（中国科学院金属研究所材料科学国家实验室）；University of Science and Technology of China（中国科学技术大学）
Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$
硫族化合物Bi $_2$ Se $_3$在应变和微应变的影响下可以达到三维（3D）狄拉克半金属态。本文报道了Bi $_2$ Se $_3$晶体中大线性磁电阻的存在。磁阻在低场下呈二次型，在4T以上则呈线性。磁阻的温度依赖性与载流子迁移率成比例，交叉场与迁移率的倒数成比例。我们的分析表明，在我们的系统中的线性磁电阻具有经典的起源，并从高迁移率的3D狄拉克电子从晶体的不均匀性的散射。我们观察到带电的硒空位被高迁移率的狄拉克电子强烈屏蔽，中性晶体缺陷是输运机制的主要散射中心。我们的分析表明，电阻率和磁电阻有其起源的载流子从中性缺陷的散射。
Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobi…
Topological Weyl semimetal WTe2 with large-scale film form has a promising prospect for new-generation spintronic devices. However, it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical nature. Here, we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post annealing. We observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 films. The nontrivial Berry phase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe2 films can reach 1245 cm2V-1s-1 and 1423 cm2V-1s-1 for holes and el…
We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26~\times$ 10$^{21}$ cm$^{-3}$ and mobility in the range 0.96 - 1.73 $\times$ 10$^{2}$ cm$^{2}$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed wit…
We found that a high mobility semimetal 1T'-MoTe2 shows a significant pressure-dependent change in the cryogenic thermopower in the vicinity of the critical pressure, where the polar structural transition disappears. With the application of a high pressure of 0.75 GPa, while the resistivity becomes as low as 10 μΩcm, thermopower reached the maximum value of 60 μVK-1 at 25 K, leading to a giant thermoelectric power factor of 300 μWK-2cm-1. Based on semiquantitative analyses, the origin of this behavior is discussed in terms of inelastic electron-phonon scattering enhanced by the softening of zo…
To achieve thermoelectric energy conversion, a large transverse thermoelectric effect in topological materials is crucial. However, the general relationship between topological electronic structures and transverse thermoelectric effect remains unclear, restricting the rational design of novel transverse thermoelectric materials. Herein, we demonstrate a topological transition-induced giant transverse thermoelectric effect in polycrystalline Mn-doped Mg3+δBi2 material, which has a competitively large transverse thermopower (617 uV/K), power factor (20393 uWm-1K-2), magnetoresistance (16600%), a…
The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. However, due to the weak EPI strength, most phenomena have focused on electronic properties rather than on phonon properties. One prominent exception is the Kohn anomaly, where phonon softening can emerg…
Topological Semimetal Transport Modulated by Interstitial Fe in Ba(Fe$_{1-x}$Co$_x$)$_{2+δ}As$_2$ Superconductors
Tsinghua University（清华大学）；Renmin University of China（中国人民大学）；Southern University of Science and Technology（南方科技大学）；Huazhong University of Science and Technology（华中科技大学）；Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；Beijing Academy of Quantum Information Sciences（北京量子信息科学研究院）；Hefei National Laboratory（合肥国家实验室）
We perform the quantum magnetotransport measurements and first-principles calculations on high quality single crystals of SmAlSi, a new topological Weyl semimetal candidate. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR)~5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas (SdH) oscillations, where MRs follow the power-law field dependence with exponent 1.52 at low fields (μ0H < 15 T) and linear behavior 1 under high fields (μ0H > 18 T). The analysis of angle dependent SdH oscillations reveal two fundamental frequencies originated from the Fermi surface (FS) po…
We survey the electrical transport properties of the single-crystalline, topological chiral semimetal CoSi which was grown via different methods. High-quality CoSi single crystals were found in the growth from tellurium solution. The sample's high carrier mobility enables us to observe, for the first time, quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in the Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in DFT calculations. …
We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic m…
