Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.
Half-Heusler compounds have attracted significant attention because of their topologically non-trivial electronic structure, which leads to unusual electron transport properties. We thoroughly investigated the magnetotransport properties of high-quality single crystals of two half-Heusler phases, TbPtBi and HoPtBi, in pursuit of the characteristic features of topologically non-trivial electronic states. Both studied compounds are characterized by the giant values of transverse magnetoresistance with no sign of saturation in magnetic field up to 14 T. HoPtBi demonstrates the Shubnikov-de Haas e…
Magnetotransport investigation of a half-Heusler antiferromagnet DyPdBi revealed hallmark features of Weyl semimetal: huge negative longitudinal magnetoresistance and planar Hall effect. Both effects have recently been linked to chiral magnetic anomaly - axial charge pumping between Weyl nodes. Magnetoresistance (MR) of single crystals of DyPdBi is very pronounced. In magnetic field longitudinal to electrical current direction it reaches -80% and its relative difference with respect to that measured in transverse field (expressed as anisotropic magnetoresistance) is extremely strong: -60% at 1…
We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, whi…
Topological insulators are new kind of Dirac materials that possess bulk insulating and surface conducting behavior. They are basically known for their unique electronic properties at the surface. Here we present the magneto-transport properties of our high quality single crystalline Y(Lu)PtBi Heusler topological insulators, which belong to a group of noncentrosymmetric superconductor with Tc = 0:8 K. Both the compounds show semi-metallic behavior with low charge carrier of 6 x1018 cm^-3 for YPtBi and 8 x1019 cm^-3 for LuPtBi at 2 K. Magneto-conductivity measurements in the tilted field indica…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We show that investigations of the unidirectional magnetoresistance provide an alternative approach to access this quantity. Based on a Wheatstone-bridge design we probed the unidirectional magnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers and separate the spin-dependent unidirectional spin Hall magnetoresistance from other contributions…
A comprehensive magnetotransport study including resistivity ($ρ_{xx}$) at various fields, isothermal magnetoresistance and Hall resistivity ($ρ_{xy}$) has been carried out at different temperatures on the Co$_{2}$TiAl Heusler alloy. Co$_{2}$TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM) transition below the curie temperature (T$_{C}$) $\sim$ 125 K. In the FM region, resistivity and magnetoresistance reveals a spin flip electron-magnon scattering and the Hall resistivity unveils the anomalous Hall resistivity ($ρ_{xy}^{AH}$). Scaling of anomalous Hall resistivity with resistivity e…
High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperatur…
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the in…
Magnetic lanthanide half-Heuslers ($R$PtBi; $R$ being the lanthanide) represent an attractive subgroup of the Heusler family and have been identified as ideal candidates for time reversal symmetry breaking topological Weyl semimetals. In this paper, we present the detailed analysis of the magnetotransport properties of frustrated antiferromagnet TbPtBi. This material shows large, non-saturating magnetoresistance (MR) with unusual magnetic field dependence. The MR of TbPtBi is significantly anisotropic with respect to the magnetic field, applied along different crystallographic directions and i…
Study of magnetotransport properties of ScPtBi revealed simultaneously: a negative contribution to the longitudinal magnetoresistance, the planar Hall effect, and distinct angular narrowing of the longitudinal magnetoresistance { three hallmarks of chiral magnetic anomaly (pumping of axial charge between Weyl nodes), a distinct property of topological semimetals. Electronic structure calculations show that structural defects, such as antisites and vacancies, bring substantial density of states at the Fermi level of ScPtBi, indicating that it is a semimetal, not a zero-gap semiconductor, as pre…
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which …
Fabrication and characterization of the gapless half-Heusler YPtSb thin films
采用磁控共溅射法在MgO缓冲的SiO2/Si（001）衬底上制备了Half-Heusler YPtSb薄膜。X射线衍射图和能量色散X射线光谱证实了高质量的生长和化学计量。电阻率的温度依赖性表现出一个双稳态型行为下降到低温。在300 K下，霍尔迁移率被确定为450 cm 2/Vs，这远高于体值（300 cm 2/Vs）。沿和垂直于电流方向施加场的面内磁阻（MR）测量显示相反的MR符号，这表明拓扑表面状态的可能存在。
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed…
Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substrate using pulsed laser deposition system, along with the study of structural, magnetic and transport properties. The magnetic property measurements of the thin film suggest a soft ferromagnetic state at room temperature with an in-plane magnetic anisotropy and a Curie temperature…
Based on high throughput density functional theory calculations, we performed systematic screening for spin-gapless semiconductors (SGSs) in quaternary Heusler alloys XX 0 YZ (X, X 0 , and Y are transition metal elements without Tc, and Z is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi). Following the empirical rule, we focused on compounds with 21, 26, or 28 valence electrons, resulting in 12, 000 possible chemical compositions. After systematically evaluating the thermodynamic, mechanical, and dynamical stabilities, we successfully identified 70 stable SGSs, confirmed by explicit …
We observed the coexistence of superconductivity and antiferromagnetic order in the single-crystalline ternary pnictide HoPdBi, a plausible topological semimetal. The compound orders antiferromagnetically at $T_N =$1.9 K and exhibits superconductivity below $T_c =$0.7 K, which was confirmed by magnetic, electrical transport and specific heat measurements. The specific heat shows anomalies corresponding to antiferromagnetic ordering transition and crystalline field effect, but not to superconducting transition. Single-crystal neutron diffraction indicates that the antiferromagnetic structure is…
We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with partially occupied $Δ_1$ band, which is important for coherent tunneling in parallel magnetization configuration. The Curie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) as predicted from mean-field-approximation. The stability of ordered phase against various antisite disorders has been investigated. We discuss here the effect of "spin-orb…
Low temperature scanning tunneling spectroscopy of HfNiSn shows a V^m(m < 1) zero bias anomaly around the Fermi level. This local density of states with a fractional power law shape is well known to be a consequence of electronic correlations. For comparison, we have also measured the tunneling conductances of other half-Heusler compounds with 18 valence electrons. ZrNiPb shows a metal-like local density of states, whereas ZrCoSb and NbFeSb show a linear and V^2 anomaly. One interpretation of these anomalies is that a correlation gap is opening in these compounds. By analyzing the magnetoresis…
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling-…
We describe the crystal structure and elementary magnetic properties of a previously unreported ternary intermetallic compound, Cr4PtGa17, which crystallizes in a rhombohedral unit cell in the noncentrosymmetric space group R3m. The crystal structure is closely related to those of XYZ half-Heusler compounds, where X, Y and Z are reported to be single elements only, occupying three different face-centered cubic sublattices. The new material, Cr4PtGa17, can be most straightforwardly illustrated by writing the formula as (PtGa2)(Cr4Ga14)Ga (X=PtGa2, Y = Cr4Ga14, Z = Ga), that is, the X and Y site…
We derive a simple relational expression between the spin polarization ratio of resistivity, $P_ρ$, and the anisotropic magnetoresistance ratio $Δρ/ρ$, and that between the spin polarization ratio of the density of states at the Fermi energy, $P_{\rm DOS}$, and $Δρ/ρ$ for nearly half-metallic ferromagnets. We find that $P_ρ$ and $P_{\rm DOS}$ increase with increasing $|Δρ/ρ|$ from 0 to a maximum value. In addition, we roughly estimate $P_ρ$ and $P_{\rm DOS}$ for a Co$_2$FeGa$_{0.5}$Ge$_{0.5}$ Heusler alloy by substituting its experimentally observed $Δρ/ρ$ into the respective expressions.
Tuning of anomalous magnetotransport properties in half-Heusler topological semimetal GdPtBi
Institute of Low Temperature and Structure Research, Polish Academy of Sciences（波兰科学院低温结构研究所）；Laboratoire des Solides Irradiés, École Polytechnique（巴黎综合理工学院辐照固体实验室）；Institute of Nuclear Physics, Polish Academy of Sciences（波兰科学院核物理研究所）
We present the magnetic field dependencies of transport properties for $R$PtBi ($R$ = Gd, Dy, Tm, and Lu) half-Heusler compounds. Temperature and field dependent resistivity measurements of high quality $R$PtBi single crystals reveal an unusually large, non-saturating magnetoresistance (MR) up to 300 K under a moderate magnetic field of $H$ = 140 kOe. At 300 K, the large MR effect decreases as the rare-earth is traversed from Gd to Lu and the magnetic field dependence of MR shows a deviation from the conventional $H^{2}$ behavior. The Hall coefficient ($R_{H}$) for $R$ = Gd indicates a sign ch…
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Using in-situ X-ray photoelectron spectroscopy, only small changes in the valence band are detected for x$\leq$0.5. For …
All-optical spin switching (AOS) represents a new frontier in magnetic storage technology -- spin manipulation without a magnetic field, -- but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn$_2$RuGa presents an opportunity. Here we carry out hitherto the comprehensive density functional investigation into the material properties of Mn$_2$RuGa, and introduce two concepts - the spin anchor site and the optical active site - as two pil…
Pt-induced semimetallic transport and enhanced thermoelectric response in the half-Heusler alloy YNi_{0.5}Pt_{0.5}Bi
Indian Institute of Technology Delhi（印度德里理工学院）；Harbin Institute of Technology（哈尔滨工业大学）；Chalmers University of Technology（查尔姆斯理工大学）；Damanhour University（达曼胡尔大学）；Max-Planck-Institut für Chemische Physik fester Stoffe（马克斯·普朗克固体化学物理研究所）；Tohoku University（东北大学）
