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arXiv 1502.05161cond-mat.mtrl-sci
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输运剂在MoS2单晶中的作用

The Role of Transport Agents in MoS2 Single Crystals

Andrea Pisoni, Jacim Jacimovic, Osor S. Barišić, Arnaud Walter, Bálint Náfrádi, Phillipe Bugnon, Arnaud Magrez, Helmuth Berger, Zsolt Revay, László Forró

摘要:

本文报道了以I_2、Br_2和TeCl_4为输运剂,用化学气相输运法(CVT)制备的MoS_2单晶的电阻率、热电势和热导率。该材料呈现出较低的施主和受主能级,其主导面内电荷输运。范德华间隙中的夹层对层间电阻率有很大的影响。热电功率表现出强烈的电子-声子相互作用的特点。详细的热导率的理论模型揭示了在二硫化钼结构中存在大量的缺陷。我们发现,这些缺陷是固有的CVT生长方法,主要来自运输代理分子夹杂物所确定的全反射X射线荧光分析(TXRF)和在束活化分析(IBAA)。

英文摘要:

We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van der Waals gap strongly influence the inter-plane resistivity. Thermoelectric power displays the characteristics of strong electron-phonon interaction. Detailed theoretical model of thermal conductivity reveals the presence of high number of defects in the MoS2 structure. We show that these defects are inherent to CVT growth method, coming mostly from the transport agent molecules inclusion as identified by Total Reflection X-ray Fluorescence analysis (TXRF) and in-beam activation analysis (IBAA).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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