红荧烯单晶场效应晶体管准二维模型中的电子输运
Electronic transport within a quasi two-dimensional model for rubrene single-crystal field effect transistors
摘要：
研究了准二维绝热Su-Schrieffer-Heeger模型的光谱和输运性质，通过调整模型参数，模拟了红荧烯单晶场效应晶体管注入载流子密度小但有限的情况。我们发现，随着温度的升高$T$，化学势移动到对应于局域态的态密度的尾部，但这不足以驱动系统进入绝缘状态。沿不同的结晶方向的迁移率计算包括顶点校正，这引起的运输寿命的一个数量级小于光谱寿命的运输机制中所涉及的状态。随着温度的升高，输运性质达到Ioffe-Regel极限，这归因于巡游态对导电过程的贡献越来越小。该模型提供的流动性与实验密切一致的功能：正确的数量级，缩放为幂律$T^{-γ}$，与$γ$接近或大于2，和正确的各向异性比不同的面内方向。由于是一个真实的高维模型，结果不会受到不受控制的近似的影响。
英文摘要：
Spectral and transport properties of the quasi two-dimensional adiabatic Su-Schrieffer-Heeger model are studied adjusting the parameters in order to model rubrene single-crystal field effect transistors with small but finite density of injected charge carriers. We show that, with increasing temperature $T$, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions is calculated including vertex corrections which give rise to a transport lifetime one order of magnitude smaller than spectral lifetime of the states involved in the transport mechanism. With increasing temperature, the transport properties reach the Ioffe-Regel limit which is ascribed to less and less appreciable contribution of itinerant states to the conduction process. The model provides features of the mobility in close agreement with experiments: right order of magnitude, scaling as a power law $T^{-γ}$, with $γ$ close or larger than two, and correct anisotropy ratio between different in-plane directions. Due to a realistic high dimensional model, the results are not biased by uncontrolled approximations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
