电子-声子耦合与无序强度对有机半导体输运性质的影响
Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors
摘要：
在极化栅控有机半导体模型中，研究了体电子-声子耦合和界面电子-声子耦合对输运性质的综合影响。虽然体电子-声子相互作用影响的行为的流动性在室温以下的相干制度，界面耦合是占主导地位的激活高$T$贡献的本地化极化子。为了改善对输运性质的描述，除了电子-声子耦合之外，还需要无序的存在。在实验相关窗口$150 K<T<300 K$中，弱无序的影响大大提高了迁移率的激活能，并在较低的电子-声子耦合值下诱导小极化子的形成。结合红荧烯有机场效应晶体管的实验数据对结果进行了讨论。
英文摘要：
The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high $T$ contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely enhance the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window $150 K<T<300 K$. The results are discussed in connection with experimental data of rubrene organic field-effect transistors.
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