用muSR研究有机半导体中的电子自旋弛豫
Electron spin relaxation in organic semiconductors probed through muSR
摘要：
介绍了μ子自旋谱，特别是避免能级交叉技术，目的是显示它作为一个非常敏感的本地探针在有机半导体中的电子自旋弛豫。避免在不同温度下的TMS-并五苯的能级交叉数据，并分析它们以提取电子自旋弛豫速率，这表明增加从0.02 MHz到0.33 MHz的温度分别在3 K和300 K。
英文摘要：
Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.
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