arXiv 0910.37532009-10cond-mat.str-elcond-mat.mtrl-sci

Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors

Akira Yoshikawa, Kosuke Uchida, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta

备注：: 13 pages, 4 figures
发表信息：: Appl. Phys. Express 2, 121103 (2009).
DOI：: 10.1143/APEX.2.121103

英文摘要：

We show herein fabrication and field-modulated thermopower for KTaO3 single-crystal based field-effect transistors (FETs). The KTaO3 FET exhibits field effect mobility of ~8 cm2/Vs, which is ~4 times larger than that of SrTiO3 FETs. The thermopower of the KTaO3 FET decreased from 600 to 220 microV/K by the application of gate electric field up to 1.5 MV/cm, ~400 microV/K below that of an SrTiO3 FET, clearly reflecting the smaller carrier effective mass of KTaO3.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

阅读原文

阅读 PDF ↗

arXiv 页面 ↗HTML 原文 ↗

本文内容

英文摘要相关论文

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

继续探索

相关论文

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho (Trho) and S (TS) for the VO2 films …

2015-07-10cond-mat.mtrl-scicond-mat.str-el

A heterojunction modulation-doped Mott transistor

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FE…

2011-09-24cond-mat.mtrl-scicond-mat.str-el

Thermoelectric effects in quantum dots

We report a numerical renormalization-group study of the thermoelectric effect in the single-electron transistor (SET) and side-coupled geometries. As expected, the computed thermal conductance and thermopower curves show signatures of the Kondo effect and of Fano interference. The thermopower curves are also affected by particle-hole asymmetry.

2009-04-15cond-mat.mes-hallcond-mat.str-el

Thermopower of an SU(4) Kondo resonance under an SU(2) symmetry-breaking field

We calculate the thermopower of a quantum dot described by two doublets hybridized with two degenerate bands of two conducting leads, conserving orbital (band) and spin quantum numbers, as a function of the temperature $T$ and a splitting $δ$ of the quantum dot levels which breaks the SU(4) symmetry. The splitting can be regarded as a Zeeman (spin) or valley (orbital) splitting. We use the non-crossing approximation (NCA), the slave bosons in the mean-field approximation (SBMFA) and also the numerical renormalization group (NRG) for large $δ$. The model describes transport through clean C nano…

2012-08-28cond-mat.str-el

Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible and hysteretic, and the area of hysteresis loop becomes larger as the rate of gate sweep is slowed down. A phase lag exists between the response of the conductance and the gate voltage. This indicates the existence of a memory of the system and we dis…

2011-07-26cond-mat.mes-hallcond-mat.str-el

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices bas…

2015-11-24cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

更多相关论文收起更多论文

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 in…

2014-03-04cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

Quantum transport through a deformable molecular transistor

The linear transport properties of a model molecular transistor with electron-electron and electron-phonon interactions were investigated analytically and numerically. The model takes into account phonon modulation of the electronic energy levels and of the tunnelling barrier between the molecule and the electrodes. When both effects are present they lead to asymmetries in the dependence of the conductance on gate voltage. The Kondo effect is observed in the presence of electron-phonon interactions. There are important qualitative differences between the cases of weak and strong coupling. In t…

2004-09-01cond-mat.mes-hallcond-mat.str-el

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE)…

2016-05-05cond-mat.mes-hallcond-mat.str-el