Low-dimensional electronic and glassy phononic transport are two important ingredients of highly-efficient thermoelectric material, from which two branches of the thermoelectric research emerge. One focuses on controlling electronic transport in the low dimension, while the other on multiscale phonon engineering in the bulk. Recent work has benefited much from combining these two approaches, e.g., phonon engineering in low-dimensional materials. Here, we propose to employ the low-dimensional electronic structure in bulk phonon-glass crystal as an alternative way to increase the thermoelectric efficiency. Through first-principles electronic structure calculation and classical molecular dynamics simulation, we show that the $π$-$π$ stacking Bis-Dithienothiophene molecular crystal is a natural candidate for such an approach. This is determined by the nature of its chemical bonding. Without any optimization of the material parameter, we obtain a maximum room-temperature figure of merit, $ZT$, of $1.48$ at optimal doping, thus validating our idea.
Two-dimensional group IV transition-metal dichalcogenides have encouraging thermoelectric applications since their electronic and lattice properties can be manipulated with strain. In this paper, we report the thermoelectric parameters such as electrical conductivity, Seebeck coefficients, electrical relaxation times, and the mode dependent contributions to the lattice thermal conductivity of ZrX$_2$ (X = S, Se, Te) from first principles methods. Our calculations indicate that due to tensile strain, the powerfactor increases while simultaneously decreasing the lattice thermal conductivity thus…
To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice thermal conductivity, we compute the thermoelectric figure of merit, zT, vs. a generalized thermoelectric quality factor. More than a dozen different complex electronic structures are examined. Surpr…
Analytical formulas for thermoelectric figure of merit and power factor are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors i…
We report a giant thermoelectric figure of merit $ZT$ (up to 6 at 1100 K) in $n$-doped lanthanum oxysulphate LaSO. Thermoelectric coefficients are computed from ab initio bands within Bloch-Boltzmann theory in an energy-, chemical potential- and temperature-dependent relaxation time approximation. The lattice thermal conductivity is estimated from a model employing the ab initio phonon and Grüneisen-parameter spectrum. The main source of the large $ZT$ is the significant power factor which correlates with a large band complexity factor. We also suggest a possible $n$-type dopant for the materi…
The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time $τ$ considering electron-phonon interactions and lattice thermal conductivity $κ_l$ considering phonon-phonon interactions, we find ZrRuTe to be an intrinsically good thermoelectric material. It has a high power factor of $\sim 2\times 10^{-3}$ W/m-K$^{2}$ and low $κ_l\sim 10$ W/m-K at 800 K. The thermoelectric figure of merit $ZT \sim 0.13$ at 800 K is higher…
The conventional thermoelectric figure of merit and the power factor are not sufficient as a measure of thin film quality of thermoelectric materials, where the power conversion efficiency depends on the film dimensions. By considering the film size, the effective thermoelectric figure of merit and effective Seebeck coefficient are introduced to guarantee that the maximum energy conversion efficiency increases as the effective thermoelectric figure of merit increases. Similarly, the effective power factor is defined. By introducing typical material properties for Bi$_2$Te$_3$ and PEDOT, we stu…
The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compound at 700 K. Such promising thermoelectric performance arises from the large degeneracy (Nv=14) of heavy conduction band coupled with weak electron-phonon interactions, which is in principle governed …
We demonstrate a method for the simultaneous determination of the thermoelectric figure of merit of multiple martials by means of the lock-in thermography (LIT) technique. This method is based on the thermal analyses of the transient temperature distribution induced by the Peltier effect and Joule heating, which enables high-throughput estimation of the thermal diffusivity, thermal conductivity, volumetric heat capacity, Seebeck or Peltier coefficient of the materials. The LIT-based approach has high reproducibility and reliability because it offers sensitive noncontact temperature measurement…
Searching for the high-performance thermoelectric (TE) materials has always been a long-held dream in the thermoelectricity field. Recently, it is found in experiments that the largest figure of merit ZT of $2.6$ can be reached in SnSe crystals at 923 K and Cu2Se sample at 850 K, which arouses the enormous interest of seeking high-ZT materials. Based on first-principle calculations and Boltzman transport equation (BTE), we report in this letter that silver halides (AgCl and AgBr) in rocksalt structure have excellent TE performances. A superhigh ZT of about 7.0 at mid-temperature (~600K) is obt…
We predict high thermoelectric efficiency in the layered perovskite La$_2$Ti$_2$O$_7$, based on calculations (mostly ab-initio) of the electronic structure, transport coefficients, and thermal conductivity in a wide temperature range. The figure of merit $ZT$ computed with a temperature-dependent relaxation time increases monotonically from just above 1 at room temperature to over 2.5 at 1200 K, at an optimal carrier density of around 10$^{20}$ cm$^{-3}$. The Seebeck thermopower coefficient is between 200 and 300 $μ$V/K at optimal doping, but can reach nearly 1 mV/K at low doping. Much of the …
Thermoelectric (TE) materials are among very few sustainable yet feasible energy solutions of present time. This huge promise of energy harvesting is contingent on identifying/designing materials having higher efficiency than presently available ones. However, due to the vastness of the chemical space of materials, only its small fraction was scanned experimentally and/or computationally so far. Employing a compressed-sensing based symbolic regression in an active-learning framework, we have not only identified a trend in materials' compositions for superior TE performance, but have also predi…
Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InS have been proposed as promising thermoelectric materials due to low lattice conductivity, originating from the atomically layered structure, high Seebeck coefficient, and the anticipation that its figure-of-merit be improved when thinned to few-layers as the band structure turns into Mexican-hat valence band (MHVB). Here we show by ab initio calculations that the MHVB should be present even on thick films of InSe/GaSe type-II heterostructures, and a 50% enhancement on thermoelectric figure-of-merit zT at room-temperat…
Li et al. (Science Advances, 29 January, p. eabe3068) claim the discovery of two improper ferroelectrics, dabcoHClO4 and dabcoHBF4 (dabco = 1,4-diazabicyclo[2.2.2]octane), and that these materials exhibit superior pyroelectric figures of merit. This information is misleading due to the fundamental methodological errors and false conclusions, not to mention that these ferroelectrics were reported over 20 years ago. They are proper ferroelectrics, for which the spontaneous polarization is the macroscopic order parameter. We show that the useful pyroelectric coefficients of these materials are ab…
Unlike in many other semiconductors, the band gap of PbTe increases considerably with temperature. We compute the thermoelectric transport properties of n-type PbTe from first principles including the temperature variation of the electronic band structure. The calculated temperature dependence of the thermoelectric quantities of PbTe is in good agreement with previous experiments when the temperature changes of the band structure are accounted for. We also calculate the optimum band gap values which would maximize the thermoelectric figure of merit of n-type PbTe at various temperatures. We sh…
Realizing record-high transverse thermoelectric figure of merit at room temperature in artificially tilted multilayers based on high power factor NiFe alloy
National Institute for Materials Science（物质材料研究机构）；University of Tsukuba（筑波大学）；The University of Tokyo（东京大学）；Resonac Corporation（瑞萨科株式会社）
Thermoelectric materials enables the harvest of waste heat and directly conversion into electricity. In search of high efficient thermoelectric materials, low thermal conductivity of a material is essential and critical. Here, we have theoretically investigated the lattice thermal conductivity and thermoelectric properties of layered intermetallic Na$_2$MgSn and Na$_2$MgPb based on the density functional theory and linearized Boltzmann equation with the single-mode relaxation-time approximation. It is found that both materials exhibit very low and anisotropic intrinsic lattice thermal conducti…
A numerical study of thermoelectric nanocomposites is presented. Thermoelectric properties as a function of average grain size or nanoparticle density are examined by simulating the measurements as they would be done experimentally. In accordance with previous theory and experimental results, we find that the Seebeck coefficient, power factor and figure of merit, zT, can be increased by nanostructuring when energy barriers exist around the grain boundaries or embedded nanoparticles. When we simulate the performance of a thermoelectric cooler with the same material, however, we find that the ma…
Advances in optimizing thermoelectric material efficiency have seen a parallel activity in theoretical and computational advances. In the current work, it is shown that the calculation of exact Fermi-Dirac integrals enables the generalization of the Wiedemann-Franz law (WF) to optimize the dimensionless thermoelectric figure of merit ZT. This is done by optimizing the Seebeck coefficient, the electrical conductivity and the thermal conductivity. In the calculation of the thermal conductivity, both electronic and phononic contributions are included. The solutions provide insight into the releva…
Thermoelectric (TE) conversion in conducting materials is of eminent importance for providing renewable energy and solid-state cooling. Although traditionally, the Seebeck effect plays a key role for the TE figure of merit zST, it encounters fundamental constraints hindering its conversion efficiency. Most notably, there are the charge compensation of electrons and holes that diminishes this effect, and the intertwinement of the corresponding electrical and thermal conductivities through the Wiedemann-Franz (WF) law which makes their independent optimization in zST impossible. Here, we demonst…
The Lorenz number (L) contained in the Wiedemann-Franz law represents the ratio of two kinetic parameters of electronic charge carriers: the electronic contribution to the thermal conductivity (K_el) and the electrical conductivity (sigma), , and can be expressed as LT=K_el/sigma where T is temperature. We demonstrate that the Lorenz number simply equals to the ratio of two thermodynamic quantities: the electronic heat capacity (c_el) and the electrochemical capacitance (c_N) through LT=c_el/c_N , a purely thermodynamic quantity, and thus it can be calculated solely based on the electron densi…
How bilayer excitons can greatly enhance thermoelectric efficiency
目前，纳米技术的主要挑战之一是设计具有高品质因数的热电器件。为此，我们建议使用双层激子。双层激子系统示出具有改进的热电势和增强的电逆流和热导率，相对于常规的基于超导体的热电体。在这里，我们提出了一个双层激子热电偶的实验实现路线图。$p$和$n$掺杂的$_2$的双层激子异质结构可以具有品质因数$zT \sim 60$ .另一种材料建议是由电子掺杂的SrTiO $_3$和空穴掺杂的Ca $_3$ Co $_4$ O $_9$制成双层。
Thermoelectric (TE) materials research plays a vital role in heat-to-electrical energy conversion and refrigeration applications. Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectric cooling. Herein, a high figure of merit, ZT, near 0.6 at cryogenic temperatures (100-150K) has been achieved in melt-spun n-type Bi85Sb15 bulk samples consisting of micron-size grains. The achieved ZT is nearly 50 percents higher than polycrystalline averaged single crystal ZT of ~0.4, and it is also significantly higher than ZT of less than ~0.3 measured below 150K in Bi-Te alloys commonly us…
The best thermoelectric materials are believed to be heavily doped semiconductors. The presence of a bandgap is assumed to be essential to achieve large thermoelectric power factor and figure of merit. In this work, we study HgTe as an example semimetal with competitive thermoelectric properties. We employ ab initio calculations with hybrid exchange-correlation functional to accurately describe the electronic band structure in conjunction with the Boltzmann Transport theory to investigate the electronic transport properties. We show that intrinsic HgTe, a semimetal with large disparity in its …
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
由于大的击穿电场，宽带隙半导体如SiC、GAN、Ga 2 O 3和金刚石基功率器件是下一代功率开关应用的焦点。面积比导通电阻和击穿电压之间的单极折衷关系经常被用来比较各种材料之间的性能限制。GAN材料系统由于其在GAN、AlN、InN、AlxInyGaN合金中突出的自发和压电极化效应以及插入适当异质结的灵活性而具有独特的优势，从而显著地拓宽了器件设计空间。
SnS and SnSe are isoelectronic materials with a common phase diagram. Recently, SnSe was found to be the most efficient intrinsic thermoelectric material in its high-temperature Cmcm phase above 800 K. Making use of first-principles calculations, here we show that the electronic and vibrational properties of both materials are very similar in this phase and, consequently, SnS is also expected to have a high thermoelectric figure of merit at high temperature in its Cmcm phase. In fact, the electronic power factor and lattice thermal conductivity are comparable for both materials, which ensures …
