利用GaN中的极化来超越传统电力电子技术的独特机会
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
摘要：
由于大的击穿电场，宽带隙半导体如SiC、GAN、Ga 2 O 3和金刚石基功率器件是下一代功率开关应用的焦点。面积比导通电阻和击穿电压之间的单极折衷关系经常被用来比较各种材料之间的性能限制。GAN材料系统由于其在GAN、AlN、InN、AlxInyGaN合金中突出的自发和压电极化效应以及插入适当异质结的灵活性而具有独特的优势，从而显著地拓宽了器件设计空间。
英文摘要：
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance and breakdown voltage is often employed to compare the performance limitation among various materials. The GaN material system has a unique advantage due to its prominent spontaneous and piezoelectric polarization effects in GaN, AlN, InN, AlxInyGaN alloys and flexibility in inserting appropriate heterojunctions thus dramatically broaden the device design space.
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