基于高功率因数NiFe合金的人工倾斜多层膜在室温下实现创纪录的横向热电优值
Realizing record-high transverse thermoelectric figure of merit at room temperature in artificially tilted multilayers based on high power factor NiFe alloy
浏览论文内容
中文总结 AI 辅助
该研究基于高功率因数NiFe合金设计人工倾斜多层膜，在室温无外磁场下实现创纪录的横向热电优值zᵧₓT=0.36，为室温横向热电材料的实用化奠定基础。
中文摘要 AI 辅助
人工倾斜多层膜（ATMLs）的横向热电转换提供了一种通用的器件架构，规避了传统纵向热电材料的结构限制，但在无外磁场条件下实现有竞争力的室温热电性能仍是关键挑战。本文报道了基于Ni₅₀Fe₅₀/Bi₀.₂Sb₁.₈Te₃的ATML在室温下、无外磁场时达到创纪录的横向热电优值zᵧₓT为0.36。利用Ni₅₀Fe₅₀合金的纵向高功率因子，以及n型Ni₅₀Fe₅₀与p型Bi₀.₂Sb₁.₈Te₃之间电、热输运性质的显著差异，设计了各向异性结构，同时利用高电导率、大横向热电势和低热导率来最大化ATML的zᵧₓT。通过对这些热电输运参数的直接测量，在基于Ni₅₀Fe₅₀/Bi₀.₂Sb₁.₈Te₃的ATML中得到zᵧₓT为0.36，该结果与分析预测的0.36高度吻合，归因于Ni₅₀Fe₅₀/Bi₀.₂Sb₁.₈Te₃结处的低界面电、热阻。这些结果为室温附近横向热电材料的实际应用铺平了道路。
英文摘要
Transverse thermoelectric conversion using artificially tilted multilayers (ATMLs) offers a versatile device architecture that circumvents the structural limitations of conventional longitudinal thermoelectrics. However, achieving competitive room-temperature thermoelectric performance without an external magnetic field remains a critical challenge. Here, we report a record-high transverse thermoelectric figure of merit $z_{yx}T$ of 0.36 in Ni$_{50}$Fe$_{50}$/Bi$_{0.2}$Sb$_{1.8}$Te$_{3}$-based ATML at room temperature without an external magnetic field. Leveraging the longitudinal high power factor in a Ni$_{50}$Fe$_{50}$ alloy and the sharp contrast in electrical and thermal transport properties between $n$-type Ni$_{50}$Fe$_{50}$ and $p$-type Bi$_{0.2}$Sb$_{1.8}$Te$_{3}$, we engineer an anisotropic structure that simultaneously exploits high electrical conductivity, large transverse thermopower, and low thermal conductivity to maximize $z_{yx}T$ in ATML. Through the direct measurements of these thermoelectric transport parameters, we obtained $z_{yx}T$ of 0.36 in Ni$_{50}$Fe$_{50}$/Bi$_{0.2}$Sb$_{1.8}$Te$_{3}$-based ATML, which is in excellent agreement with the analytical prediction of 0.36 owing to the low interfacial electrical and thermal resistances at the Ni$_{50}$Fe$_{50}$/Bi$_{0.2}$Sb$_{1.8}$Te$_{3}$ junctions. These results pave the way for the practical implementation of transverse thermoelectric materials around room temperature.
