Thermoelectric (TE) conversion in conducting materials is of eminent importance for providing renewable energy and solid-state cooling. Although traditionally, the Seebeck effect plays a key role for the TE figure of merit zST, it encounters fundamental constraints hindering its conversion efficiency. Most notably, there are the charge compensation of electrons and holes that diminishes this effect, and the intertwinement of the corresponding electrical and thermal conductivities through the Wiedemann-Franz (WF) law which makes their independent optimization in zST impossible. Here, we demonstrate that in the Dirac semimetal Cd3As2 the Nernst effect, i.e., the transverse counterpart of the Seebeck effect, can generate a large TE figure of merit zNT. At room temperature, zNT = 0.5 in a small field of 2 T; it significantly surmounts its longitudinal counterpart zST for any field and further increases upon warming. A large Nernst effect is generically expected in topological semimetals, benefiting from both the bipolar transport of compensated electrons and holes and their high mobilities. In this case, heat and charge transport are orthogonal, i.e., not intertwined by the WF law anymore. More importantly, further optimization of zNT by tuning the Fermi level to the Dirac node can be anticipated due to not only the enhanced bipolar transport, but also the anomalous Nernst effect arising from a pronounced Berry curvature. A combination of the former topologically trivial and the latter nontrivial advantages promises to open a new avenue towards high-efficient transverse thermoelectricity.
The paper introduces and analyzes a new characteristic of thermoelectric composites - their intrinsic figure of merit characterizing the influence of thermoelectric phenomena on the effective properties of composites and governing thermal into electric energy conversion within a composite.
The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with …
Two-dimensional group IV transition-metal dichalcogenides have encouraging thermoelectric applications since their electronic and lattice properties can be manipulated with strain. In this paper, we report the thermoelectric parameters such as electrical conductivity, Seebeck coefficients, electrical relaxation times, and the mode dependent contributions to the lattice thermal conductivity of ZrX$_2$ (X = S, Se, Te) from first principles methods. Our calculations indicate that due to tensile strain, the powerfactor increases while simultaneously decreasing the lattice thermal conductivity thus…
To increase the performance of thermoelectric materials, the electronic parameters in the figure of merit must be improved. In this paper, we use full, numerical band structures and solve the Boltzmann equation in the relaxation time approximation using energy-dependent scattering times informed by first principles simulations. By varying the strength of the electron-phonon coupling or the lattice thermal conductivity, we compute the thermoelectric figure of merit, zT, vs. a generalized thermoelectric quality factor. More than a dozen different complex electronic structures are examined. Surpr…
Analytical formulas for thermoelectric figure of merit and power factor are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors i…
We report a giant thermoelectric figure of merit $ZT$ (up to 6 at 1100 K) in $n$-doped lanthanum oxysulphate LaSO. Thermoelectric coefficients are computed from ab initio bands within Bloch-Boltzmann theory in an energy-, chemical potential- and temperature-dependent relaxation time approximation. The lattice thermal conductivity is estimated from a model employing the ab initio phonon and Grüneisen-parameter spectrum. The main source of the large $ZT$ is the significant power factor which correlates with a large band complexity factor. We also suggest a possible $n$-type dopant for the materi…
In order to improve the thermoelectric performance of TiCoSb we have substituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Se equally at Sb site. The electronic structure of Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 is investigated using the full potential linearized augmented plane wave method and the thermoelectric transport properties are calculated on the basis of semi-classical Boltzmann transport theory. Our band structure calculations show that Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has semiconducting behavior with indirect band gap value of 0.98 eV which follow the empirical rule of 18…
The paper deals with thermoelectric figure of merit of the superlattice materials. It is shown,that two-dimensional character of band spectrum of thermoelectric material may increase the power factor,but not the thermoelectric figure of merit.
Improvements in the thermoelectric properties of Half-Heusler materials have been achieved by means of a micrometer-scale phase separation that increases the phonon scattering and reduces the lattice thermal conductivity. A detailed study of the p-type Half-Heusler compounds Ti(1-x)Hf(x)CoSb0.85Sn0.15 using high-resolution synchrotron powder X-ray diffraction and element mapping electron microscopy evidences the outstanding thermoelectric properties of this system. A combination of intrinsic phase separation and adjustment of the carrier concentration via Sn substitution is used to realize a r…
The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time $τ$ considering electron-phonon interactions and lattice thermal conductivity $κ_l$ considering phonon-phonon interactions, we find ZrRuTe to be an intrinsically good thermoelectric material. It has a high power factor of $\sim 2\times 10^{-3}$ W/m-K$^{2}$ and low $κ_l\sim 10$ W/m-K at 800 K. The thermoelectric figure of merit $ZT \sim 0.13$ at 800 K is higher…
The conventional thermoelectric figure of merit and the power factor are not sufficient as a measure of thin film quality of thermoelectric materials, where the power conversion efficiency depends on the film dimensions. By considering the film size, the effective thermoelectric figure of merit and effective Seebeck coefficient are introduced to guarantee that the maximum energy conversion efficiency increases as the effective thermoelectric figure of merit increases. Similarly, the effective power factor is defined. By introducing typical material properties for Bi$_2$Te$_3$ and PEDOT, we stu…
Half-Heusler alloys (MgAgSb structure) are promising thermoelectric materials. RNiSn half-Heusler phases (R=Hf, Zr, Ti) are the most studied in view of their thermal stability. The highest dimensionless figure of merit (ZT) obtained is ~1 in the temperature range ~450-900oC, primarily achieved in nanostructured alloys. Through proper annealing, ZT~1.2 has been obtained in a previous ZT~1 n-type (Hf,Zr)NiSn phase without the nanostructure. There is an appreciable increase in the power factor, decrease in charge carrier density, and increase in carrier mobility. The findings are attributed to th…
Low-dimensional electronic and glassy phononic transport are two important ingredients of highly-efficient thermoelectric material, from which two branches of the thermoelectric research emerge. One focuses on controlling electronic transport in the low dimension, while the other on multiscale phonon engineering in the bulk. Recent work has benefited much from combining these two approaches, e.g., phonon engineering in low-dimensional materials. Here, we propose to employ the low-dimensional electronic structure in bulk phonon-glass crystal as an alternative way to increase the thermoelectric …
Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each…
The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compound at 700 K. Such promising thermoelectric performance arises from the large degeneracy (Nv=14) of heavy conduction band coupled with weak electron-phonon interactions, which is in principle governed …
Non-symmetric variants of self-consistent field theory are proposed that served the basis for theoretical investigation of the effect of thermal conductivity of composite particles surface layers on the effective thermoelectric figure of merit. It is shown that in some cases thermoelectric figure of merit can be essentially improved due to the presence of a shell.
Boron-doped polycrystalline silicon-germanium (SiGe) thin films are grown by low-pressure chemical vapor deposition (LPCVD) and their thermoelectric properties are characterized from 120 K to 300 K for the potential applications in integrated microscale cooling. The naturally formed grain boundaries are found to play a crucial role in determining both the charge and thermal transport properties of the films. Particularly, the unique columnar grain structures result in remarkable thermal conductivity anisotropy with the in-plane thermal conductivities of SiGe films about 50% lower than the cros…
We demonstrate a method for the simultaneous determination of the thermoelectric figure of merit of multiple martials by means of the lock-in thermography (LIT) technique. This method is based on the thermal analyses of the transient temperature distribution induced by the Peltier effect and Joule heating, which enables high-throughput estimation of the thermal diffusivity, thermal conductivity, volumetric heat capacity, Seebeck or Peltier coefficient of the materials. The LIT-based approach has high reproducibility and reliability because it offers sensitive noncontact temperature measurement…
We consider the effective properties of composite structure that includes nanocontacts between macrocrystallits of bulk material. The model of a such nanostructured composite is developed. In the mean-field approximation we calculate effective values of the thermopower, heat - and the electrical conductivity, thermoelectric figure of merit.
Searching for the high-performance thermoelectric (TE) materials has always been a long-held dream in the thermoelectricity field. Recently, it is found in experiments that the largest figure of merit ZT of $2.6$ can be reached in SnSe crystals at 923 K and Cu2Se sample at 850 K, which arouses the enormous interest of seeking high-ZT materials. Based on first-principle calculations and Boltzman transport equation (BTE), we report in this letter that silver halides (AgCl and AgBr) in rocksalt structure have excellent TE performances. A superhigh ZT of about 7.0 at mid-temperature (~600K) is obt…
We predict high thermoelectric efficiency in the layered perovskite La$_2$Ti$_2$O$_7$, based on calculations (mostly ab-initio) of the electronic structure, transport coefficients, and thermal conductivity in a wide temperature range. The figure of merit $ZT$ computed with a temperature-dependent relaxation time increases monotonically from just above 1 at room temperature to over 2.5 at 1200 K, at an optimal carrier density of around 10$^{20}$ cm$^{-3}$. The Seebeck thermopower coefficient is between 200 and 300 $μ$V/K at optimal doping, but can reach nearly 1 mV/K at low doping. Much of the …
A composite material is considered which consists of conducting nanoparticles separated by tunneling dielectric barriers. The influence of the phonon thermal conductivity of dielectric matrix on the thermoelectric figure of merit of this composite material is theoretically in-vestigated. The range of values and barrier parameters that can lead to the thermoelectric figure of merit greater than unity is estimated. The influence of space charge and nonlinearity of current-voltage relations of tunneling barrier are also discussed.
Half Heusler (HH) thermoelectric alloys provide a wide platform to choose materials with non-toxic and earth abundant elements. This article presents an ab-initio theoretical evaluation of electrical and thermal transport properties of three Bismuth-based most promising thermoelectric alloys, selected out of 54 stable HH compounds. These are brand new compounds which are recently proposed to be stable (Nature Chem. 7, 308 (2015)) and may have interesting properties. The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi and ZrRhBi, served as a hint for their promising ther…
We present a study of the thermopower $S$ and the dimensionless figure of merit $ZT$ in molecules sandwiched between gold electrodes. We show that for molecules with side groups, the shape of the transmission coefficient can be dramatically modified by Fano resonances near the Fermi energy, which can be tuned to produce huge increases in $S$ and $ZT$. This shows that molecules exhibiting Fano resonances have a high efficiency of thermoelectric cooling which is not present for conventional un-gated molecules with only delocalized states along their backbone.
Dimensionless thermoelectric figure of merit $ZT$ is investigated for two-dimensional organic conductors $τ-(EDO-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$, $τ$-(EDT-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ and $τ$-(P-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ ($y \le 0.875$), respectively. The $ZT$ values were estimated by measuring electrical resistivity, thermopower and thermal conductivity simultaneously. The largest $ZT$ is 2.7 $\times$ 10$^{-2}$ at 155 K for $τ-(EDT-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$, 1.5 $\times$ 10$^{-2}$ at 180 K for $τ-(EDO-S,S-DMEDT-TTF)_2(AuI_2)_{1+y}$ and 5.4 $\times$ 10$^{-3}$ at 78 K for $τ-(P-S,S-D…
Thermoelectric (TE) materials are among very few sustainable yet feasible energy solutions of present time. This huge promise of energy harvesting is contingent on identifying/designing materials having higher efficiency than presently available ones. However, due to the vastness of the chemical space of materials, only its small fraction was scanned experimentally and/or computationally so far. Employing a compressed-sensing based symbolic regression in an active-learning framework, we have not only identified a trend in materials' compositions for superior TE performance, but have also predi…
We investigate electron and phonon transport through edge disordered zigzag graphene nanoribbons based on the same methodological tool of nonequilibrium Green functions. We show that edge disorder dramatically reduces phonon thermal transport while being only weakly detrimental to electronic conduction. The behavior of the electronic and phononic elastic mean free paths points to the possibility of realizing an electron-crystal coexisting with a phonon-glass. The calculated thermoelectric figure of merit (ZT) values qualify zigzag graphene nanoribbons as a very promising material for thermoele…
Post-transition metal chalcogenides (PTMCs) such as GaSe, GaS, InSe, and InS have been proposed as promising thermoelectric materials due to low lattice conductivity, originating from the atomically layered structure, high Seebeck coefficient, and the anticipation that its figure-of-merit be improved when thinned to few-layers as the band structure turns into Mexican-hat valence band (MHVB). Here we show by ab initio calculations that the MHVB should be present even on thick films of InSe/GaSe type-II heterostructures, and a 50% enhancement on thermoelectric figure-of-merit zT at room-temperat…
The influence of periodic edge vacancies and antidot arrays on the thermoelectric properties of zigzag graphene nanoribbons is investigated. Using the Green's function method, the tight-binding approximation for the electron Hamiltonian and the 4th nearest neighbor approximation for the phonon dynamical matrix, we calculate the Seebeck coefficient and the thermoelectric figure of merit. It is found that, at a certain periodic arrangement of vacancies on both edges of zigzag nanoribbon, a finite band gap opens and almost twofold degenerate energy levels appear. As a result, a marked increase in…
Li et al. (Science Advances, 29 January, p. eabe3068) claim the discovery of two improper ferroelectrics, dabcoHClO4 and dabcoHBF4 (dabco = 1,4-diazabicyclo[2.2.2]octane), and that these materials exhibit superior pyroelectric figures of merit. This information is misleading due to the fundamental methodological errors and false conclusions, not to mention that these ferroelectrics were reported over 20 years ago. They are proper ferroelectrics, for which the spontaneous polarization is the macroscopic order parameter. We show that the useful pyroelectric coefficients of these materials are ab…
Unlike in many other semiconductors, the band gap of PbTe increases considerably with temperature. We compute the thermoelectric transport properties of n-type PbTe from first principles including the temperature variation of the electronic band structure. The calculated temperature dependence of the thermoelectric quantities of PbTe is in good agreement with previous experiments when the temperature changes of the band structure are accounted for. We also calculate the optimum band gap values which would maximize the thermoelectric figure of merit of n-type PbTe at various temperatures. We sh…
N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200K; here we investigate how filling multiple valence band pockets at T and H-points of the Brillouin zone produces high zT in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT>1 in Bi, was used successfully in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400K) of single crystals with 12<x<37 and polycrystals (x=50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13.
We suggest a wavelength-dependent figure of merit for transparent conducting nanotube networks, composed of the sheet resistance and the optical density. We argue that this would be more useful than other suggestions prevailing in the literature, because it relies on more realistic assumptions regarding the optical parameters of real nanotubes: it takes into account the fact that the dc resistivity depends on the concentration of free carriers, while the visible absorption is caused by bound carriers. Based on sheet resistance measurements and wide-range transmission spectra, we compare severa…
Realizing record-high transverse thermoelectric figure of merit at room temperature in artificially tilted multilayers based on high power factor NiFe alloy
National Institute for Materials Science（物质材料研究机构）；University of Tsukuba（筑波大学）；The University of Tokyo（东京大学）；Resonac Corporation（瑞萨科株式会社）
Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was fou…
Selecting nanocomposites for photonic switching applications requires optimizing their thermal, nonlinear and two-photon absorption characteristics. We simplify this step by defining a compound figure of merit (FOM_{C}) for nanocomposites of noble metals in dielectric based on criteria that limit these structures in photonic applications, i.e. thermal heating and two-photon absorption. The device independent results predict extremely large values of FOM_{C} for a specific combination of the metal and insulator dielectric constant given by ε_{h}=\frac{ε_{1}-ε_{2}}{2}, where ε_{h} is the dielect…
Thermoelectric materials enables the harvest of waste heat and directly conversion into electricity. In search of high efficient thermoelectric materials, low thermal conductivity of a material is essential and critical. Here, we have theoretically investigated the lattice thermal conductivity and thermoelectric properties of layered intermetallic Na$_2$MgSn and Na$_2$MgPb based on the density functional theory and linearized Boltzmann equation with the single-mode relaxation-time approximation. It is found that both materials exhibit very low and anisotropic intrinsic lattice thermal conducti…
A numerical study of thermoelectric nanocomposites is presented. Thermoelectric properties as a function of average grain size or nanoparticle density are examined by simulating the measurements as they would be done experimentally. In accordance with previous theory and experimental results, we find that the Seebeck coefficient, power factor and figure of merit, zT, can be increased by nanostructuring when energy barriers exist around the grain boundaries or embedded nanoparticles. When we simulate the performance of a thermoelectric cooler with the same material, however, we find that the ma…
Advances in optimizing thermoelectric material efficiency have seen a parallel activity in theoretical and computational advances. In the current work, it is shown that the calculation of exact Fermi-Dirac integrals enables the generalization of the Wiedemann-Franz law (WF) to optimize the dimensionless thermoelectric figure of merit ZT. This is done by optimizing the Seebeck coefficient, the electrical conductivity and the thermal conductivity. In the calculation of the thermal conductivity, both electronic and phononic contributions are included. The solutions provide insight into the releva…
We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically-protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a non-zero time-reversal-invariant momentum such as Bi_{1-x}Sb_x. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable param…
We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by using Boltzmann transport theory. The calculated thermoelectric properties of the pristine Cd3As2 match well the experimental results. The electron or hole doping, especially the latter, is found improving much the thermoelectric behaviors of the material. The optimum merit ZT of Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020 cm-3…
Grain boundaries are commonly observed in carbon nanostructures, but their influence on thermal and electric properties are still not completely understood. Using a combined approach of density functional tight-binding theory and non-equilibrium Green functions we investigate electron and phonon transport in carbon based systems. In this work, quantum transport and thermoelectric properties are summarized for graphene sheets, graphene nanoribbons and carbon nanotubes with a variety of grain boundary types in a wide temperature range. Motivated by previous findings that disorder scatters phonon…
The Lorenz number (L) contained in the Wiedemann-Franz law represents the ratio of two kinetic parameters of electronic charge carriers: the electronic contribution to the thermal conductivity (K_el) and the electrical conductivity (sigma), , and can be expressed as LT=K_el/sigma where T is temperature. We demonstrate that the Lorenz number simply equals to the ratio of two thermodynamic quantities: the electronic heat capacity (c_el) and the electrochemical capacitance (c_N) through LT=c_el/c_N , a purely thermodynamic quantity, and thus it can be calculated solely based on the electron densi…
Currently, one of the major nanotechnological challenges is to design thermoelectric devices that have a high figure of merit. To that end, we propose to use bilayer excitons. Bilayer exciton systems are shown to have an improved thermopower and an enhanced electric counterflow and thermal conductivity, with respect to regular semiconductor-based thermoelectrics. Here we present a roadmap towards experimental realization of a bilayer exciton thermocouple. A bilayer exciton heterostructures of $p$- and $n$-doped Bi$_2$Te$_3$ can have a figure of merit $zT \sim 60$. Another material suggestion i…
We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the dimensionless figure of merit (ZT) on FeSb2 via two mechanisms. First, a semiconductor to metal transition is induced, which enhances the value of the power factor at low-temperatures. Second, the thermal conductivity, which was already reduced in nanostructured FeSb2 samples, is further reduced by increased point defect scattering through the n type substitution of …
Thermoelectric (TE) materials research plays a vital role in heat-to-electrical energy conversion and refrigeration applications. Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectric cooling. Herein, a high figure of merit, ZT, near 0.6 at cryogenic temperatures (100-150K) has been achieved in melt-spun n-type Bi85Sb15 bulk samples consisting of micron-size grains. The achieved ZT is nearly 50 percents higher than polycrystalline averaged single crystal ZT of ~0.4, and it is also significantly higher than ZT of less than ~0.3 measured below 150K in Bi-Te alloys commonly us…
The Onsager-de Groot-Callen transport theory, implemented as a network model, is used to simulate the transient Harman method, which is widely used experimentally to determine all thermoelectric transport coefficients in a single measurement setup. It is shown that this method systematically overestimates the Seebeck coefficient for samples composed of two different materials. As a consequence, the figure of merit is also overestimated, if the thermal coupling of the measurement setup to the environment is weak. For a mixture of metal and semiconductor particles near metal percolation the figu…
The best thermoelectric materials are believed to be heavily doped semiconductors. The presence of a bandgap is assumed to be essential to achieve large thermoelectric power factor and figure of merit. In this work, we study HgTe as an example semimetal with competitive thermoelectric properties. We employ ab initio calculations with hybrid exchange-correlation functional to accurately describe the electronic band structure in conjunction with the Boltzmann Transport theory to investigate the electronic transport properties. We show that intrinsic HgTe, a semimetal with large disparity in its …
Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance and breakdown voltage is often employed to compare the performance limitation among various materials. The GaN material system has a unique advantage due to its prominent spontaneous and piezoelectric polarization effects in GaN, AlN, InN, AlxInyGaN alloys and flexibility in inserting appropriate heterojunctions thus dramatically…
The hybrid halide perovskites, the very performant compounds in photovoltaic applications, possess large Seebeck coefficient and low thermal conductivity making them potentially interesting high figure of merit ($ZT$) materials. For this purpose one needs to tune the electrical conductivity of these semiconductors to higher values. We have studied the CH$_3$NH$_3$MI$_3$ (M=Pb,Sn) samples in pristine form showing very low $ZT$ values for both materials; however, photoinduced doping (in M=Pb) and chemical doping (in M=Sn) indicate that, by further doping optimization, $ZT$ can be enhanced toward…
Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 μV/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power …
Research on thermoelectrical energy conversion, the reuse of waste heat produced by some mechanical or chemical processes to generate electricity, has recently gained some momentum. The calculation of the electronic parameters entering the figure of merit of this energy conversion, and therefore the discovery of efficient materials, is usually performed starting from the Landauer's approach to quantum transport coupled with the Onsager's linear response theory. As it is well known, that approach suffers of certain serious drawbacks. Here, we discuss alternative dynamical methods that can go be…
The Harman method for measuring the thermal conductivity of a sample using the Peltier effect, may also be used to determine the dimensionless figure of merit from just two electrical resistance measurements. We consider a modified version of the Harman method where the current contacts are much smaller than the contact faces of the sample. We calculate the voltage and temperature distributions in a rectangular sample of a material having anisotropy in all of its transport coefficients. The thermoelectric anisotropy has important consequences in the form of thermoelectric eddy currents and the…
SnS and SnSe are isoelectronic materials with a common phase diagram. Recently, SnSe was found to be the most efficient intrinsic thermoelectric material in its high-temperature Cmcm phase above 800 K. Making use of first-principles calculations, here we show that the electronic and vibrational properties of both materials are very similar in this phase and, consequently, SnS is also expected to have a high thermoelectric figure of merit at high temperature in its Cmcm phase. In fact, the electronic power factor and lattice thermal conductivity are comparable for both materials, which ensures …
As a new carbon allotrope, the recently fabricated graphdiyne has attracted much attention due to its interesting two-dimensional character. Here we demonstrate by multiscale computations that, unlike graphene, graphdiyne has a natural band gap, and simultaneously possess high electrical conductivity, large Seebeck coefficient, and low thermal conductivity. At a carrier concentration of 2.74*10^11/cm^2 for holes and 1.62*10^11/cm^2 for electrons, the room temperature ZT value of graphdiyne can be optimized to 3.0 and 4.8, respectively, which makes it an ideal system to realize the concept of "…
