The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data applications with the required throughput and energy efficiency. The next technology frontier will be monolithically integrated chips with three dimensionally interleaved memory and logic for unprecedented data bandwidth with reduced energy consumption. In this work, we exploit the atomically thin nature of the graphene edge to assemble a resistive memory stacked in a vertical three dimensional structure. We report some of the lowest power and energy consumption among the emerging non-volatile memories due to an extremely thin electrode with unique properties, low programming voltages, and low current. Circuit analysis of the architecture using experimentally measured device properties show higher storage potential for graphene devices compared that of metal based devices.
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$μ$W/$μ$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac po…
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surface…
Quantum transport properties of tantalum-oxide resistive switching filaments
Budapest University of Technology and Economics（布达佩斯技术与经济大学）；Institute of Technical Physics and Materials Science, Centre for Energy Research（技术物理与材料科学研究所，能源研究中心）；MTA-BME Correlated van der Waals Structures Momentum Research Group（匈牙利科学院-布达佩斯技术与经济大学关联范德华结构动力学研究组）；ELKH-BME Condensed Matter Research Group（匈牙利研究与创新院-布达佩斯技术与经济大学凝聚态研究组）；Institute of Electromagnetic Fields, ETH Zurich（苏黎世联邦理工学院电磁场研究所）
A sacrificial film of polystyrene nanoparticles was utilized to introduce nano-cavities in mesoporous metal oxide layers. This enabled the growth of larger perovskite crystals inside the oxide scaffold with significantly suppressed non-radiative recombination and improving device performance. This work exemplifies potential applications of such nanoarchitectonic approaches in perovskite opto-electronic devices.
We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag$_2$S thin film deposited on a wide Ag bottom electrode, which was contacted by the Pt tip of a scanning tunneling microscope. By applying a positive voltage on the silver electrode the conductance is seen to switch to a state having three orders of magnitude higher conductance, which is related to the formation of a conductive path inside the Ag$_2$S thin film. We argue this to be composed of a metallic silver nanowire accom…
The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of rea…
Interfacial thermal transport between electrodes and polymer electrolytes can play a crucial role in the thermal management of solid-state lithium-ion batteries (SLIBs). Modifying the electrode surface with functional molecules can effectively increase the interfacial thermal conductance (ITC) between electrodes and polymers (e.g., electrolytes, separators); however, how they influence the interfacial thermal transport in SLIBs during charge/discharge remains unknown. In this work, we conduct molecular dynamics (MD) simulations to investigate the ITC between charged electrodes and solid-state …
In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.
Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM
Université catholique de Louvain (UCLouvain)（天主教鲁汶大学）；University of Applied Sciences Zwickau（茨维考应用技术大学）；Universidad de Granada（格拉纳达大学）；Universitat de Valencia（瓦伦西亚大学）
Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO$_2$/TiN heterostructures with and without Ta…
