纳米尺度导电丝附近强径向电场标度与ReRAM电阻开关机制
Strong radial electric field scaling near nanoscale conductive filaments and the ReRAM resistive switching mechanism
AI总结：
本文揭示了纳米尺度导电路径中表面电荷诱导的强径向电场，解释了ReRAM中负电阻开关机制的物理原理。
摘要：
重置在双极电阻存储器中的物理机制一直是几十年争论的焦点，并被认为是阻碍电阻存储器技术发展的主要障碍。本文介绍了一种在电流承载导体中发现的纳米尺度效应，即表面电荷诱导的径向电场与导电路径的半径成反比。然后将这一纳米尺度效应应用于解释丝状金属氧化物电阻开关记忆器件（忆阻器）中的负电阻开关（重置）机制。以前对负电阻开关机制的解释认为，氧离子的扩散构成了径向驱动机制，而电场下的漂移仅限于电流方向平行的方向。这一解释与文献中部分器件收集的保持性和显微镜数据相冲突。我们证明，电场对纳米尺度导电路径半径的依赖性可以在仅-1 V偏压下产生高达10^5到10^6 V/cm的径向电场，足以支配丝状金属氧化物中的负电阻开关机制。通过考虑这一纳米尺度效应，长期存在的关于双极丝状电阻存储器器件中负（重置）电阻开关机制的异常实验数据终于得到解释。对纳米尺度导电路径中表面电荷和相关电场的广泛理解可能对进一步集成电路的缩放至关重要，并有助于阐明许多纳米尺度现象。
英文摘要：
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect in current carrying conductors, whereby surface charge induced radial electric fields are found to be inversely proportional to the radius of the conductive path. This nanoscale effect is then applied to explain the negative resistance switching (reset) mechanism in filamentary metal oxide resistive switching memory devices (memristors). Previous explanations for the negative resistive switching mechanism state that diffusion constitutes the radial driving mechanism for oxygen ions, and drift under electric fields is restricted to the direction parallel to current flow. This explanation conflicts with retention and microscopy data collected in a subset of devices presented in literature. We demonstrate that the electric field's dependency on the on the radius of a nanoscale conductive path can result in radial fields on the order of 10^5 to 10^6 V/cm at only -1 V bias, sufficient to govern the negative resistance switching mechanism in filamentary metal oxides. By accounting for this nanoscale size effect, long standing anomalous experimental data about the negative (reset) resistance switching mechanism in bipolar filamentary resistive memory devices is finally reconciled. Wide understanding of surface charges and associated electric fields in nanoscale conductive paths could prove important for further scaling of integrated circuits and aid in elucidating many nanoscale phenomena.
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