TiSe₂、TiSeS和CuₓTiSe₂基点点接触中的电子输运与阻变特性研究
Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2
AI总结：
本研究在TiSe₂及其掺杂衍生物的电压偏置点接触中发现阻变效应，室温下电阻差可达两个数量级，源于空位漂移致化学计量比变化，为ReRAM等器件提供了候选材料。
摘要：
在过渡金属硫族化合物中，TiSe₂因其非典型电阻率行为、电荷密度波（CDW）态涌现、诱导超导性等引人关注的物理特性而备受瞩目。本文报道了TiSe₂的一项新特性发现：在基于TiSe₂及其S掺杂、Cu掺杂衍生物（TiSeS、CuₓTiSe₂）的电压偏置点接触（PCs）中观测到了阻变效应。该阻变发生在低阻的类金属态与高阻的类半导体态之间：施加偏置电压（通常低于0.5V）可实现正向切换，施加反极性电压（通常低于0.5V）则可实现反向切换。室温下，两种状态的电阻差最高可达两个数量级。该效应的起源可归因于高电场下Se/Ti空位的漂移/位移导致点接触核心区域的化学计量比发生变化。此外，我们证实点接触核心区域会产生发热现象，这一效应可促进电场诱导的阻变过程。同时，我们未在TiSe₂的点接触谱中发现任何CDW谱特征的证据。观测到的阻变效应表明，TiSe₂及其衍生物是一类极具潜力的材料，可应用于非易失性阻变随机存取存储器（ReRAM）设计等领域。
英文摘要：
TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc. Here, we report discovery of new feature of TiSe2, namely, observation of resistive switching in voltage biased point contacts (PCs) based on TiSe2 and its derivatives doped by S and Cu (TiSeS, CuxTiSe2). The switching is taking place between a low resistive mainly metallic-type state and a high resistive semiconducting-type state by applying bias voltage (usually below 0.5V), while reverse switching takes place by applying voltage of opposite polarity (usually below 0.5V). The difference in resistance between these two states can reach up to two orders of magnitude at the room temperature. The origin of the effect can be attributed to the variation of stoichiometry in PC core due to drift/displacement of Se/Ti vacancies under high electric field. Additionally, we demonstrated, that heating takes place in PC core, which can facilitate the electric field induced effect. At the same time, we did not found any evidence for CDW spectral features in our PC spectra for TiSe2. The observed resistive switching allows to propose TiSe2 and their derivatives as the promising materials, e.g., for non-volatile resistive random access memory (ReRAM) engineering.
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