金属氧化物双层忆阻器的多位存储操作
Multibit memory operation of metal-oxide bi-layer memristors
摘要：
在这项工作中，我们评估了大量的金属氧化物双层，并证明了通过多位存储器操作增加存储器稳定性的好处。我们介绍了一种编程方法，允许操作金属氧化物忆阻器件的多位存储器元件高度包装，但清晰可辨的存储器状态。最后，我们展示了一个5.5位的存储单元（47个电阻状态）具有良好的保持和功耗性能。这为神经形态和非易失性存储器应用铺平了道路。
英文摘要：
In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
