This article identifies the process of crystallization of thin high-$κ$ dielectric films and an optimal range of annealing temperature in the field of high-$κ$ dielectric-based metal-oxide-semiconductor (MOS) technology for its improved electrical performances. Differential Scanning Calorimetry (DSC) technique is employed to understand the thermal behaviour of thin high-$κ$ dielectric films of HfO$_2$, deposited by rf sputtering, on Si. The exothermic trends of the DSC signal and Grazing Incidence X-ray diffraction (GIXRD) data indicate an amorphous to crystalline transition in the high-$κ$ film at higher temperature. The enthalpy-temperature variation shows a glass temperature (T$_g$) at $\sim$ 590 $^o$C beyond which an amorphous to m-HfO$_2$ crystalline transition takes place. Further, the Hf-Silicate formation, observed in DSC measurement and corroborated by Fourier transformed Infrared Spectroscopy (FT-IR) studies, indicates that the process of formation of Hf-Silicate begins at $\sim$ 717 $^oC$. High-frequency (HF) capacitance-voltage $(C-V)$ and current density - voltage $(J-V)$ characteristics establish that the crystallization of the film is not the root cause of degradation of the electrical properties of the high-$κ$-based MOS devices, rather the device degrades due to formation of interfacial Hf-Silicate.
The preparation of BaCeO3 doped by yttrium and indium oxides (BaCe0.6Y0.3In0.1O2.8) has been performed by solid-state reaction from BaCO3, CeO2, Y2O3, In2O3. The compound BaCe0.6Y0.3In0.1O2.8 has been synthesized for the first time. The X-ray measurements have showed that BaCe0.6Y0.3In0.1O2.8 has an orthorhombic structure (space group Pmcn). The standard formation enthalpies of BaCe0.6Y0.3In0.1O2.8 have been determined by solution calorimetry combining the solution enthalpies of BaCe0.6Y0.3In0.1O2.8 and BaCl2 + 0.6CeCl3 + 0.3YCl3 + 0.1InCl3 mixtures in 1 M HCl with 0.1 M KI at 298.15 K and lit…
We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minutes. We find dramatic surface mass transport concomitant with the development of low-energy facets on surfaces that are covered by native oxide. The enhanced surface mass transport ceases after the oxide is completely desorbed, and it is also not observed on surfaces where the native oxide had been removed by HF before annealing.
In this study, we report a different strategy to prepare graphene nanopapers from direct vacuum filtration. Instead of the conventional method, i.e. thermal annealing nanopapers at extremely high temperatures prepared from graphene oxide (GO) or partially reduced GO, we fabricate our graphene nanopapers directly from suspensions of fully reduced graphene oxide (RGO), obtained after RGO and thermally annealing at 1700 °C in vacuum. By using this approach, we studied the effect of thermal annealing on the physical properties of the macroscopic graphene-based papers. Indeed, we demonstrated that …
The standard formation enthalpy and enthalpy from binary oxide of yttrium cuprate have been determined by solution calorimetry combining the solution enthalpies of Y2Cu2O5 and Y2O3 + 2CuO mixture in 6 M HCl at 323.15 K and literature data. The heat capacity of Y2Cu2O5 has been measured by adiabatic calorimetry from 8 up to 303 K. Smoothed values of heat capacities, entropies and enthalpies were calculated on the basis of experimental data. The thermodynamic functions (heat capacity, entropy and enthalpy) at 298.15 K have been calculated. On the basis of obtained data it has been obtained that …
Internal friction in oxide thin films imposes a critical limitation to the sensitivity and stability of ultra-high finesse optical cavities for gravitational wave detectors. Strategies like doping or creating nanolaminates are sought to introduce structural modifications that reduce internal friction. This work describes an investigation of the morphological changes SiO2/Ta2O5 and TiO2/Ta2O5 nanolaminates undergo with annealing and their impact on room temperature internal friction. It is demonstrated that thermal treatment results in a reduction of internal friction in both nanolaminates, but…
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correla…
In the present work we use TiO2 nanotube arrays, carrying a Pt coating that is optimally dewetted, as a photocatalyst to generate H2. In order to achieve a maximum H2-generation efficiency, on the one hand an ideal thermal dewetting of the Pt layer into nanoparticles is needed that requires an oxygen free heat treatment, and on the other hand an optimal crystallization of the TiO2 nanotubes into anatase with reduced defect density is achieved only by annealing in O2 containing environment. To overcome this issue, we combine adequate reducing and oxidizing conditions in a multiple annealing tre…
Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of $4.8\times10^4$~cm$^2$V…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been characterized using XRD, FTIR, EDAX, AFM and Laser Ellipsometer. The impact of annealing temperatures in O2 ambient on structural properties such as crystallite size, phase, orientation, stress have been studied using XRD. The Hf-O phonon peaks in the infrared absorption spectrum are detected at 512, 412 cm^-1 . The stretching vibration modes at 720 cm^-1 and 748 cm^-1…
ABO3 oxides with the perovskite-related structures are attracting significant interest due to their promising physical and chemical properties for many applications requiring tunable chemistry, including fuel cells, catalysis, and electrochemical water splitting. Here we report on the crystal structure of the entire family of perovskite oxides with ABO3 stoichiometry, where A and B are Ba, Sr, Mn, Ce. Given the vast size of this chemically complex material system, exploration for stable perovskite-related structures with respect to its constituent elements and annealing temperature is performe…
This paper reports on the thermal properties of reduced graphite oxide (RGO) flakes, studied by means of scanning thermal microscopy (SThM). This technique was demonstrated to allow thermal characterization of the flakes with a spatial resolution of the order of a few tens of nanometers, while recording nanoscale topography at the same time. Several individual RGO flakes were analyzed by SThM, both as obtained after conventional thermal reduction and after a subsequent annealing at 1700°C. Significant differences in the thermal maps were observed between pristine and annealed flakes, reflectin…
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high dopings significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approxim…
We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theor…
The dynamics of the release of stored energy during annealing along two different crystallographic planes i.e.{111} and {220} in deformed copper have been investigated using in-situ X-ray diffraction measurements at 458K and 473K respectively. The study has been carried out on 50% and 80% rolled Cu sheets. The microstructures of the rolled samples have been characterised using optical microscope and Electron Back Scattered Diffraction measurements. The microstructural parameters were evaluated using Scherrer equation and the modified Rietveld technique from X-ray diffractogram. The stored ener…
The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton luminescence. Strain is reduced by annealing. In addition, annealing causes annihilation of oxygen and copper vacancies, which leads to a negative correlation between luminescence of unlike vacancies.
Variety of conducting heterointerfaces have been made between SrTiO3 substrates and thin capping layers of distinctly different oxide materials that can be classified into polar band insulators (e.g. LaAlO3), polar Mott insulators (e.g. LaTiO3), apparently non-polar band insulators (e.g. γ-Al2O3), and amorphous oxides (e.g. amorphous SrTiO3). A fundamental question to ask is if there is a common mechanism that governs interfacial conductivity in all these heterointerfaces. Here, we examined the conductivity of different kinds of heterointerfaces by annealing in oxygen and surface treatment wit…
We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\rm it}$) near the conduction band edge ($E_{\rm C}$) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl$_3$)-annealed samples, in contrast, $D_{\rm it}$ at $E_{\rm C}-0.2$ eV increased from $1.3\times10^{10}$ to $2.2\times10^{12}$ cm$^{-2}$eV$^{-1}$ by the vacuum annealing, and the channel mobility of MOS field effect transistors …
We report that annealing in low-oxygen-partial-pressure (low-p$_{\rm O2}$) ambient is effective in reducing the interface state density (D$_{\rm IT}$) at a SiC (0001)/SiO$_{\rm 2}$ interface near the conduction band edge (E$_{\rm C}$) of SiC. The D$_{\rm IT}$ value at E$_{\rm C}$$-$0.2 eV estimated by a high (1 MHz)-low method is 6.2$\times$10$^{12}$ eV$^{-1}$cm$^{-2}$ in as-oxidized sample, which is reduced to 2.4${\times}$10$^{12}$ eV$^{-1}$cm$^{-2}$ by subsequent annealing in O$_{\rm 2}$ (0.001%) at 1500${}^\circ$C, without interface nitridation. Although annealing in pure Ar induces leakag…
The problem of detecting the ability of some metal oxides as photocatalysts is receiving considerable attention in the world. The studied zinc oxide is considered as one of the most utilized semiconductors, due to its direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. The characteristic formulation of Copper doped zinc oxide is implemented to obtain an improved adsorption kinetics and photocatalytic activity of zinc oxide photocatalyst capable of evolving estimated photoluminescence (PL) spectra of zinc oxide nanoparticles to explore the effect of Copp…
Highly-ordered and spatially-coherent cobalt slanted columnar thin films were deposited by glancing angle deposition onto silicon substrates, and subsequently oxidized by annealing at 475 $^{\circ}$C. Scanning electron microscopy, Raman scattering, generalized ellipsometry, and density functional theory investigations reveal shape-invariant transformation of the slanted nanocolumns from metallic to transparent metal-oxide core-shell structures with properties characteristic of spinel cobalt oxide. We find passivation of Co-SCTFs yielding CoAl$_2$O$_3$ core-shell structures produced by conforma…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $μ$C/cm$^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low tempera…
Nanocrystalline materials are well known for their beneficial mechanical and physical properties. However, it is of utmost importance to stabilize the microstructure at elevated temperatures to broaden the window of application e.g. by pinning grain boundaries through impurities or oxides. CuCo alloys, severe plastically deformed using high-pressure torsion, were used to investigate the evolution of oxides upon annealing. These investigations were performed using electron microscopy, synchrotron high-energy X-ray scattering and atom probe tomography. Monitoring the evolution of oxides by in-si…
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (~5000 um2) monolayer MoS2 with a yield of 85 %. A central element of this process is an exposed material forming gas anneal …
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Georgia Institute of Technology（佐治亚理工学院）；University of Notre Dame（圣母大学）；Missouri University of Science and Technology（密苏里科技大学）；Samsung Electronics Co., Ltd.（三星电子株式会社）
In this paper for the first time we synthesized the compound BaCe0.7Nd0.2In0.1O2.85 by solid-state reaction. The phase has orthorhombic structure (space group Pmcn). We also measured the standard formation enthalpies of BaCe0.7Nd0.2In0.1O2.85 by solution calorimetry in 1 M HCl with 0.1 M KI. We determined the stability of Nd(In)-doped barium cerate with respect to mixtures of binary oxides. On the basis of these data we established that above-mentioned mixed oxide is thermodynamically stable with respect to their decomposition into binary oxides at room temperatures. We also established that B…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $ϕ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an e…
We present a detailed study of the emergence of bulk ferromagnetism in low carrier density samples of undoped indium tin oxide (ITO). We used annealing to increase the density of oxygen vacancies and change sample morphology without introducing impurities through the metal insulator transition (MIT). We utilized a novel and highly sensitive "Corbino-disk torque magnetometry" technique to simultaneously measure the thermodynamic and transport effects of magnetism on the same sample after successive annealing. With increased sample granularity, carrier density increased, the sample became more m…
The inherent existence of multi phases in iron oxide nanostructures highlights the significance of them being investigated deliberately to understand and possibly control the phases. Here, the effects of annealing at 250 0C with a variable duration on the bulk magnetic and structural properties of high aspect ratio bi-phase iron oxide nanorods with ferrimagnetic Fe3O4 and antiferromagnetic alpha-Fe2O3 is explored. Increasing annealing time under a free flow of oxygen enhanced the alpha-Fe2O3 volume fraction, and improved the crystallinity of the Fe3O4 phase, identified in changes in the magnet…
Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 C and 2) 550-600 C. The obtained films demonstrate the m…
Effects of thermal annealing and film thickness on the structural and optical properties of indium-tin-oxide thin films
Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University（西安交通大学合金创新与设计中心，材料力学行为国家重点实验室）
The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatme…
Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
The argon content of titanium dioxide doped tantalum pentoxide thin films was quantified in a spatially resolved way using HAADF images and DualEELS. Films annealed at 300$^{\circ}$C, 400$^{\circ}$C and 600$^{\circ}$C were investigated to see if there was a relationship between annealing temperature and bubble formation. It was shown using HAADF imaging that argon is present in most of these films and that bubbles of argon start to form after annealing at 400$^{\circ}$C and coarsen after annealing at 600$^{\circ}$C. A semi-empirical standard was created for the quantification using argon data …
We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-doping occurs at a temperature as low as 300C, while the highest doping level of ~5% N is achieved at 500C. N-doping is accompanied by the reduction of GO with decreases in oxygen levels from ~28% in as-made GO down to ~2% in 1100C NH3 reacted GO. XPS analysis of the N binding configurations of doped GO finds pyridinic N in the do…
The strong metal-support interaction (SMSI) leads to substantial changes of the properties of an oxide-supported catalyst after annealing under reducing conditions. The common explanation is the formation of heavily reduced, ultrathin oxide films covering metal particles. This is typically encountered for reducible oxides such as TiO2 or Fe3O4. Zirconia (ZrO2), a typical catalyst support, is difficult to reduce and therefore no obvious candidate for the SMSI effect. In this work, we use inverse model systems with Rh(111), Pt(111), and Ru(0001) as supports. Contrary to expectations, we show tha…
Objective of this work was to synthesize Copper doped Zinc Oxide (CZO) films and optimization of process parameters by varying molarity of zinc acetate dehydrate from 0.5 M to 1.0 M, concentration of copper acetate monohydrate from 1% to 5 % and annealing temperature from 200 C to 300 C to measure the sensitivity of CZO films for CO (Carbon Monoxide) gas. The concentration of CO gas was maintained at 5 ppm and operating temperature of 250 oC was used for sensing. Analysis for sensitivity showed highest grading for parametric combination of 0.75 molarity, 3% copper concentration and 300 C annea…
Cubic zinc oxide (rs-ZnO), metastable under normal conditions, was synthesized from the wurtzite modification (w-ZnO) at 7.7 GPa and ~800 K in the form of nanoparticles isolated in the NaCl matrix. The phase transition rs-ZnO \rightarrow w-ZnO in nanocrystalline zinc oxide under ambient pressure was experimentally studied for the first time by differential scanning calorimetry and high-temperature X-ray diffraction. It was shown that the transition occurs in the 370-430 K temperature range and its enthalpy at 400 K is -10.2 \pm 0.5 kJ mol-1.
Resistivity and dc magnetization measurements were performed for the polycrystalline Pr$_{0.5}$Ca$_{0.5}$Co$_{1-x}$Fe$_{x}$O$_{3-δ}$ ($x$ = 0, 0.05, 0.10 and 0.15) samples. The as-fabricated samples exhibit ferromagnetic (FM) transition and the transition temperature increases with increasing the iron doping level. Annealing under high oxygen pressure induces a spin-state transition of Co ions in the \emph{iron-free} sample and such transition is reinforced with increasing the annealing oxygen pressure, while the annealing under high oxygen pressure suppresses the ferromagnetic ordering. Contr…
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We s…
La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser dep…
We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2/Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer…
We report here investigations on the instability in luminescence of bare (TOPO-stabilized) and CdS- capped CdSe particles under infrared radiation. During photo-thermal annealing the formation of oxide layers on the surfaces of the particles create defect states. Consequently there is a reduction in particle size. These two effects control the light output from the samples. We make a quantitative comparison of the stability of bare CdSe and core-shell type CdSe-CdS particles under photo-annealing. Using diffusion theory, we show that the volume of the oxide layer, adhered to the crystallites, …
We found that carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and be taken out to the SiO2 side by high-purity Ar annealing. We evaluated the concentration of the ejected carbon atoms in the SiO2 by secondary ion mass spectrometry, and discovered that it clearly depends on the condition of oxide formation (dry-oxidation, nitridation treatment, and phosphorus treatment). This work provides an indirect but unambiguous evidence for the carbon-byproducts existing at the SiO2/SiC interfaces, and also indicates that the phosphorus treatment remove…
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO th…
Using a CO$_2$ laser to directly heat the crystals from the back side, SrTiO$_3$ substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent from the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °C to complete. The process may be universal, at least for perovskite oxide surfaces, as it also works, at different temperatures, for LaAlO$_3$ and NdGaO$_3$, two other widely used oxide substrate mat…
Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 850\degreeC) real time TEM measurements showed the evaluation of gold nanoparticles into rectangular/square shaped gold silicide structures. This has been attributed to selective thermal decomposition …
Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various advanced microscopy and spectroscopy techniques. The main oxides on top of the original thin Al2O3 layer, originating from the primary galvanizing process, are identified as ZnO and (Mn,Zn)Mn2O4 spinel. For some of the investigated steel alloys, a non-uniform, several nanometer thick Cr enriched, additional film was found at the Al2O3 layer. At a sufficiently high concentration, Cr can act as a substitute for Al dur…
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500°C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The variation in the overall shape of the gold nanostructures and finer changes at the edges, like rounding of corners has been reported in this work. Although well aligned nano rectangles were formed in …
A comparative study of the physical properties of undoped Zinc Oxide (ZnO) and Al doped Zinc Oxide (AZO) thin films were performed as a function of annealing temperature. The structural properties were analyzed using X-ray diffraction and the recorded patterns indicated that the crystallinity of the films always enhanced with increasing annealing temperature while it degrades with Al doping. The topographical modification of the films due to heat treatment was examined by atomic force microscopy which revealed that annealing roughened the surface of all the films; however the AZO films always …
Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on the dopant species. We found that the dependence could be reasonably explained by the bond-dissociation energy. By incorporating the dopant with higher bond-dissociation energy, the film becomes less sensitive to oxygen partial pressure used during sputtering deposition and remains electrically stable to thermal annealing treatment. The concept of bond-dissoci…
Thin films of thulium and ytterbium-doped titanium oxide were grown by metal-organic spray pyrolysis deposition from titanium(IV)oxide bis(acetylacetonate), thulium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and ytterbium(III) tris(acetylacetonate). Deposition temperatures have been investigated from 300°C to 600°C. Films have been studied regarding their crystallity and doping quality. Structural and composition characterisations of TiO2:Tm,Yb were performed by electron microprobe, X-ray diffraction and Fourier transform infrared spectroscopy. The deposition rate can reach 0.8 \mum/h. …
