Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We show that the nucleation and stability of HZO grown through atomic layer deposition (ALD) varied depending on functionalization of the TMDC, and the deposition conditions can cause tungsten oxidation in WSe2. It was observed that HZO deposited on non-functionalized MoS2 was unstable and volatile upon annealing, while HZO on functionalized MoS2 was stable in the 400-800 °C range. The HZO/WSe2 interface was stable until 700 °C, after which Se began to evolve from the WSe2. In addition, there is evidence of oxygen vacancies in the HZO film being passivated at high temperatures. Lastly, X-ray diffraction (XRD) was used to confirm crystallization of the HZO within the temperature range studied.
Access Rate-Dependent Endurance Behavior of Ferroelectric Hafnium Zirconium Oxide Capacitors
NaMLab gGmbH（NaMLab有限公司）；Queen’s University Belfast（贝尔法斯特女王大学）；Technical University Dresden（德累斯顿工业大学）；Intel Foundry（英特尔代工）；University Applied Sciences, Department of Applied Sciences and Mechatronics（应用科学大学应用科学与机电工程系）
First-principles study on the electrical resistivity in zirconium dichalcogenides with multi-valley bands: mode-resolved analysis of electron-phonon scattering
Investigation of a high-entropy oxide photocatalyst for hydrogen generation by first-principles calculations coupled with experiments: Significance of electronegativity
Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering
