Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method

Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel…

化学异质氧化钒晶体中离散电开关的起源

Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals

本文发现氧化钒晶体中存在离散阈值开关电压且循环间电压差恒定，其阈值场比化学计量VO2低约100倍，该行为与价态变化机制及VO2-VnO2n-1复合相的成分涨落相关，为低能耗神经形态器件提供新途径。

Study of RF Sputtered Antimony Alloyed Bismuth Vanadium Oxide (Sb:BiVO4) Thin Films for Enhanced Photoelectrochemical (PEC) performance from Bandgap Modulation to Thickness Optimization

Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode for water splitting yet the PEC performance is limited due to its relatively higher (2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eV by controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadium oxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purity homemade target, fabricated by solid-state reaction using a mixture of Sb2O3, Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growth parameters, powder crystallography, post-deposition effects, …

Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation

Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin film is oxidized in open air. For an optimum oxidation duration, VO2 films are obtained with good phase transition properties. We recently reported a modified APTO process using a step temperature profile for oxidation (Thin Solid Films 706, 138003 (2020)). We demonstrated an ultra-low thermal budget synthesis of VO2 thin films with good electrical and optical …

Recent advance in phase transition of vanadium oxide based solar reflectors and the fabrication progress

Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR radiation reflectivity, while at the lower temperature the monoclinic structure VO2 acts as the transparent material and increase the transmission radiation. In this paper, we first present the metal-insulator phase transition (MIT) of the VO2 in high and low temperatures. Then we simulate the meta-surface VO2 of metamaterial reflector by Ansys HFSS to show t…

Investigations on the improved cycling stability of Kazakhstanite phase Fe-V-O layered oxide by using superconcentrated electrolytes: Generalized solubility limit approach (Part I)

In this article, we address the issue of vanadium dissolution pertinent in the layered Fe5V15O39(OH)9.9H2O using the solubility limit approach. This layered oxide is prepared via a low-cost solution phase synthesis route and crystallizes in the Kazakhstanite phase (Space Group: C2/m), confirmed using selected area electron diffraction and x-ray diffraction.The layered oxide exhibits the 2 electron redox reaction of vanadium (V5+ to V3+) along with the 1 electron redox reaction of iron within the voltage window of 1.5-3.8V. This results in a high specific capacity of ~350mAhg-1 which can be ext…