We develop a microscopic model for the recently demonstrated double quantum dot (DQD) maser. In characterizing the gain of this device we find that, in addition to the direct stimulated emission of photons, there is a large contribution from the simultaneous emission of a photon and a phonon, i.e., the phonon sideband. We show that this phonon-assisted gain typically dominates the overall gain which leads to masing. Recent experimental data are well fit with our model.
We experimentally study the phase stabilization of a semiconductor double quantum dot (DQD) single atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise of -99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunab…
We demonstrate a single-atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high quality factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masin…
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from THz sources to quantum communication. Here we demonstrate a maser that is driven by single electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside of a high quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above a…
Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of …
Via the numerical analysis on the intraband dynamics of optically excited semiconductor superlattices, we find that time-integrated squared THz emission signals can be used for probing both dynamic localization and multi-photon resonance in the coherent regime. Competition effect between dynamic localization and photon-assisted transport has also been discussed.
new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this mechanism is capable of explaining the observed trends in temperature dependences of the intraband relaxation rates for PbSe and CdSe colloidal nanocrystal quantum dots.
Nuclear spins of dopant atoms in semiconductors are promising candidates as quantum bits, due to the long lifetime of their quantum states. Conventionally, coherent control of nuclear spins is done using ac magnetic fields. Using the example of a phosphorus atom in silicon, we theoretically demonstrate that hyperfine interaction can enhance the speed of magnetic control: the electron on the donor amplifies the ac magnetic field felt by the nuclear spin. Based on that result, we show that hyperfine interaction also provides a means to control the nuclear spin efficiently using an ac electric fi…
We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the polarization of the 2D electron gas in the quantum well.
We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.
In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of differe…
Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and Cd…
We theoretically investigate the production of polarization-entangled photons through the biexciton cascade decay in a single semiconductor quantum dot. In the intermediate state the entanglement is encoded in the polarizations of the first emitted photon and the exciton, where the exciton state can be effectively ``measured'' by the solid state environment through the formation of a lattice distortion. We show that the resulting loss of entanglement becomes drastically enhanced if the phonons contributing to the lattice distortion are subject to elastic scatterings at the device boundaries, w…
Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by…
Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic phonon modes via deformation potential and piezoelectric coupling. We show that piezoelectric mechanism for the considered system is of great importance and for some ranges of quantum dot molecule parameters is the dominant contribution to relaxation. It is shown that the phonon-assisted tunneling rates reach much higher values (up to 160 ns$^{-1}$ even at zero…
The basic theoretical foundation for the modelling of phonon assisted absorption spectra in direct bandgap semiconductors, introduced by Elliott 60 years ago using second order perturbation theory, results in a square root shaped dependency close to the absorption edge. A careful analysis of the experiments reveals that for the yellow S excitons in Cu$_2$O the lineshape does not follow that square root dependence. The reexamination of the theory shows that the basic assumptions of constant matrix elements and constant energy denominators is invalid for semiconductors with dominant exciton effe…
For a semiconductor quantum dot strongly coupled to a microcavity, we theoretically investigate phonon-assisted transitions from the exciton to a cavity photon, where the energy mismatch is compensated by phonon emission or absorption. By means of a Schrieffer-Wolff transformation we derive an effective Hamiltonian, which describes the combined effect of exciton-cavity and exciton-phonon coupling, and compute the scattering rates within a Fermi golden rule approach. The results of this approach are compared with those of a recently reported description scheme based on the independent Boson mod…
We use terahertz pulses to induce resonant transitions between the eigenstates of optically generated exciton populations in a high-quality semiconductor quantum-well sample. Monitoring the excitonic photoluminescence, we observe transient quenching of the $1s$ exciton emission, which we attribute to the terahertz-induced $1s$-to-$2p$ excitation. Simultaneously, a pronounced enhancement of the $2s$-exciton emission is observed, despite the $1s$-to-$2s$ transition being dipole forbidden. A microscopic many-body theory explains the experimental observations as a Coulomb-scattering mixing of the …
We consider a line-shape of magnetoexciton photoluminescence from quantum wells when the disorder is sufficiently small. In this case the phonon-assisted optical transitions become important for the line formation. We study both inter-band and intra-band excitons. For inter-band excitons the width of a single peak emission line is calculated as a function of temperature and quantum well width. For intra-band excitons the double peak of the emission line is predicted when the electron filling factor is odd and greater or equal to three. In the latter case the lowest magnetoexciton dispersion cu…
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electronphonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single partic…
Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and scalable optically-addressable spin qubits. Yet, the impact of strong spin-orbit coupling on their dynamical response, for example under optical excitation, has remained elusive. In this context, we study the effect of spin-orbit coupling on the electron-phonon interaction in a single chalcogen vacancy defect in monolayer transition metal dichalcogenides, molybdenu…
We use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection. A cavity is populated with n_c ~ 6000 photons by driving a current through an emitter DQD. These photons are used to sense the charge state of a target DQD that is located at the opposite end of the cavity. Charge dynamics in the target DQD influence the output power and emission frequency of the maser. Three different readout mechanisms are compared. The detection scheme requires no cavity input field and may potentially be used to improve the scalability of semiconductor an…
We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emission of the quantum dot transition. These observations highlight a new situation for cavity quantum electrodynamics involving spectrally broad emitters.
Phonon-assisted transport and hole-phonon coupling in GaAs double quantum dots
University of Science and Technology of China（中国科学技术大学）；CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China（中国科学技术大学量子信息与量子物理前沿协同创新中心）；Hefei National Laboratory, University of Science and Technology of China（中国科学技术大学合肥国家实验室）
Electron-phonon and exciton-phonon interactions in nanoclusters are formulated and computed under the framework of GW-BSE (Bethe-Salpeter equation) approach. The phonon effect is modeled with the two-particle representation for the first time. The nonradiative relaxation rates of electrons and excitons are calculated. It is uncovered that both single-phonon relaxation and multiple-phonon relaxation are significant in nanocrystals, and correspond to two types of physical processes that have totally different spectral lineshapes. Furthermore, the multiple-phonon relaxation always occurs and its …
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect refle…
Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative pro…
Tho-photon absorption holds potential for many practical applications. We theoretically investigate the onset of this phenomenon in a semiconductor quantum dot -- metallic nanoshell composite subjected to a resonant CW excitation. Two-photon absorption in this system may occur in two ways: incoherent -- due to a consecutive ground-to-one-exciton-to-biexciton transition and coherent -- due to a coherent two-photon process, involving the direct ground-to-biexciton transition in the quantum dot. The presence of the nanoshell nearby the quantum dot gives rise to two principal effects: (i) -- renor…
We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singlet-singlet relaxation in a two-electron doped structure is considered. The influence of Coulomb interaction is discussed via comparison with a single electron system. We find that the relaxation rate reaches similar values in the two cases but the Coulomb interaction shifts the maximum rates towards larger separations between the dots. The difference in electron-phonon interaction between deformation potential and piezoelectric coupling is investigated. We show that the phonon-induced tunnel…
We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. are defined by the lowest two energy states of the remaining valence electron localized around one or another donor. We show that an electron located initially at one donor site can be transferred to another donor site via an auxiliary molecular level formed upon the hybridization of the excited states of two donors. The electron transfer is driven by a single resonant microwave pulse in t…
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 2…
We study phonon-assisted dephasing in optically excited semiconductor quantum dots within the frameworks of the independent Boson model and optimal control. Using a realistic description for the quantum dot states and the phonon coupling, we demonstrate that such dephasing has a drastic impact on the coherent optical response. We employ optimal control theory to search for control strategies that allow to fight decoherence, and show that appropriate tailoring of laser pulses allows a complete control of the optical excitation despite the phonon dephasing.
We investigate both experimentally and theoretically a simple yet more robust and flexible alternative to Rabi oscillation-type biexciton preparation protocols traditionally used for semiconductor quantum dots. The quantum dot is excited by a strong laser pulse positively detuned from the two-photon resonance yielding an on demand initialization of the biexciton state by making use of the phonon-induced thermalization of the photon dressed states. It is shown that for excitation pulses in the picosecond range, a stable and high fidelity of up to $f_{XX}=0.98\pm 0.01$ is reached. Notably, the g…
Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet electron wavefunctions and energies. It is found that at small doublet energies the piezoelectric rates due to flexural modes give the dominant contribution. For small slab thicknesses the predicted rates are up to two orders of magnitude higher than for very thick slabs.
Some basic radiative and non-radiative processes taking place in semiconductor nanocrystals are discussed, and rates of these processes are calculated. In particular, in the present review we explore both intra-crystallite processes, such as the photon emission, Auger recombination, phonon-assisted exciton relaxation, capture on surface defects, multi-exciton generation, and inter-crystallite processes realized through the exciton migration in ensembles of nanocrystals. Exciton transitions, creation, and annihilation accompanied by the photon and (or) phonon emission or absorption are consider…
The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the electron plasmon interactions (EPIs) on the tunneling current spectra of QDM are examined. The energy levels of the QDs, intradot and interdot Coulomb interactions, electron interdot hopping strengths, and tunneling rates of QDs are renormalized by the EPIs. The differential conductance spectra show peaks arising from the plasmon assisted tunneling process,…
We investigate the dynamics of the exciton formation and relaxation on a picosecond time scale following a pulsed photoexcitation of a semiconductor. The study is conducted in the framework of the density matrix theory complemented with the dynamics controlled truncation scheme. We truncate the phonon branch of the resulting hierarchy of equations and propose the form of coupling among single-phonon-assisted and higher-order phonon-assisted density matrices so as to ensure the energy and particle-number conservation in a closed system. Time scales relevant for the exciton formation and relaxat…
Excitonic effects in 1D semiconductors can be qualitatively different from those in higher dimensions. In particular, the Sommerfeld factor, the ratio of the above-band-edge excitonic continuum absorption to free electron-hole pair generation, has been shown to be less than 1 (i.e., suppressed) in 1D systems while it is larger than1 (i.e., enhanced) in 2D and 3D systems. Strong continuum suppression indeed exists in semiconducting single-wall carbon nanotubes, a prototypical 1D semiconductor. However, absorption spectra for carbon nanotubes are typically fit with a combination of Lorentzians a…
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first ex…
Universal Deoxidation of Semiconductor Substrates Assisted by Machine-Learning and Real-Time-Feedback-Control
School of Physics Science and Technology, Xinjiang University（新疆大学物理科学与技术学院）；College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science（中国科学院大学材料科学与光电技术学院）；Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所）；School of Physical and Electronic Engineering, Yancheng Teachers University（盐城师范学院物理与电子工程学院）
In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscillatory behavior is also observed in the steady-state emission linewidth and in timeresolved photoluminescence excitation data, which reveals variation with excitation energy in the exciton lifetime. T…
Among the most exciting recent advances in the field of superconducting quantum circuits is the ability to coherently couple microwave photons in low-loss cavities to quantum electronic conductors (e.g.~semiconductor quantum dots or carbon nanotubes). These hybrid quantum systems hold great promise for quantum information processing applications; even more strikingly, they enable exploration of completely new physical regimes. Here we study theoretically the new physics emerging when a quantum electronic conductor is exposed to non-classical microwaves (e.g.~squeezed states, Fock states). We s…
Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/d…
A single mode electromagnetic resonator coupled to a two-level hybrid-quantum-dot(hQD) is studied theoretically as a laser(maser), when the hQD is driven out of equilibrium with external applied d.c. bias voltage. Using the formalism of the non-equilibrium Green's functions for the hQD and the semi-classical laser equations, we determine the relevant physical quantities of the system. We find that due to the resonant Andreev reflections and the formation of the Floquet-Andreev side-resonances in the sub-gap region, at appropriate gate voltages and above a certain threshold bias voltage and dam…
We consider cotunneling through a quantum dot in the presence of spin-flip processes induced by the coupling to acoustic phonons of the surrounding. An expression for the phonon-assisted cotunneling current is derived by means of a generalized Schrieffer-Wolff transformation. The influence of the spin-phonon coupling on the heating of the dot is considered. The result is evaluated for the case of a parabolic semiconductor quantum dot with Rashba and Dresselhaus spin-orbit coupling and a method for the determination of the spin-phonon relaxation rate is proposed.
Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin usi…
We present a theoretical study of the evolution of spatial coherence during relaxation between delocalized exciton states in a pair of vertically stacked semiconductor quantum dots coupled to acoustic phonons. We show that spatial coherence can be transferred to the ground state even in a system of uncoupled non-identical quantum dots if a particular kind of degeneracy between the inter-level energy splittings is present. The phonon-assisted mechanism of coherence transfer leads to a dependence of the amount of the resulting coherence on the inter-dot distance and temperature. We analyze also …
In semiconductor quantum dots the coupling to the environment, i.e. to phonons, plays a crucial role for optical state preparation. We analyze the phonon impact on two methods for a direct optical preparation of the dark exciton, which is enabled by a tilted magnetic field: the excitation with a chirped laser pulse and the excitation with a detuned pulse. Our study reveals that for both methods phonons either do not impede the proposed mechanism or are even useful by widening the parameter range where a dark state preparation is possible due to phonon-assisted dark exciton preparation. In view…
We demonstrate that longitudinal plasmons in doped monolayer graphene can mediate highly efficient long-range energy transfer between nearby fluorophores, e.g., semiconductor quantum dots. We derive a simple analytical expression for the energy transfer efficiency that incorporates all the essential processes involved. We perform numerical calculations of the transfer efficiency for a pair of PbSe quantum dots near graphene for inter-fluorophore distances of up to 1 $μ$m and find that the plasmon-assisted long-range energy transfer can be enhanced by up to a factor of $\sim10^4$ relative to th…
For a single semiconductor quantum dot embedded in a microcavity, we theoretically and experimentally investigate phonon-assisted transitions between excitons and the cavity mode. Within the framework of the independent boson model we find that such transitions can be very efficient, even for relatively large exciton-cavity detunings of several millielectron volts. Furthermore, we predict a strong detuning asymmetry for the exciton lifetime that vanishes for elevated lattice temperature. Our findings are corroborated by experiment, which turns out to be in good quantitative and qualitative agr…
We have numerically solved the Hamiltonian of an electron in a semiconductor double ring subjected to the magnetic flux and Rashba spin-orbit interaction. It is found that the Aharonov-Bohm energy spectrum reveals multi-zigzag periodic structures. The investigations of spin-dependent electron dynamics via Rabi oscillations in two-level and three-level systems demonstrate the possibility of manipulating quantum states. Our results show that the optimal control of photon-assisted inter-ring transitions can be achieved by employing cascade-type and $Λ$-type transition mechanisms. Under chirped pu…
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial nonlinear media can have tailored resonances in the infrared around the longitudinal optical phonon modes of various compatible restrahlen oxides leading to enhanced electric field confinement in a metal-oxide-semiconductor tunnel diode. This provides a new avenue for the examination and design of nonlinear phenomena extending the concept of nonlinear suscepti…
