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arXiv 1606.04520quant-phcond-mat.mes-hall
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半导体量子点中非辐射载流子弛豫过程的选择规则

Selection Rules for Non-Radiative Carrier Relaxation Processes in Semiconductor Quantum Dots

E. R. Schmidgall, Y. Benny, I. Schwartz, R. Presman, L. Gantz, Y. Don, D. Gershoni

摘要:

利用辐射级联的时间分辨强度互相关测量方法研究了半导体量子点中受激载流子的非辐射弛豫过程。我们光谱识别间接辐射级联,其中包括中间声子辅助弛豫。第一光子的能量揭示了非辐射弛豫之前的多载波配置,而第二光子的能量揭示了弛豫之后的配置。因此,强度互相关测量提供了非辐射过程及其选择规则的定量测量。我们建立了一个模型,它准确地描述了电子-声子和电子-空穴交换相互作用的实验观察。我们的测量和模型为半导体纳米结构中的工程弛豫过程提供了一种新的工具。

英文摘要:

Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative processes and their selection rules. We construct a model which accurately describes the experimental observations in terms of the electron-phonon and electron-hole exchange interactions. Our measurements and model provide a new tool for engineering relaxation processes in semiconductor nanostructures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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