In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
We propose a protocol for the deterministic generation of entanglement between two ensembles of nuclear spins surrounding two distant quantum dots. The protocol relies on the injection of electrons with definite polarization in each quantum dot and the coherent transfer of electrons from one quantum dot to the other. Computing the exact dynamics for small systems, and using an effective master equation and approximate non-linear equations of motion for larger systems, we are able to confirm that our protocol indeed produces entanglement for both homogeneous and inhomogeneous systems. Last, we …
We show that it is possible to employ reservoir engineering to turn two distant and relatively bad cavities into one good cavity with a tunable spontaneous decay rate. As a result, quantum computing schemes, that would otherwise require the shuttling of atomic qubits in and out of an optical resonator, can now be applied to distant quantum dots. To illustrate this we transform a recent proposal to entangle two qubits via the observation of macroscopic fluorescence signals [Metz et al., Phys. Rev. Lett. 97, 040503 (2006)] to the electron-spin states of two semiconductor quantum dots. Our scheme…
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99\% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we sho…
We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubit…
We study the coupling between a singlet-triplet qubit realized in a double quantum dot to a topological qubit realized by spatially well-separated Majorana bound states. We demonstrate that the singlet-triplet qubit can be leveraged for readout of the topological qubit and for supplementing the gate operations that cannot be performed by braiding of Majorana bound states. Furthermore, we extend our setup to a network of singlet-triplet and topological hybrid qubits that paves the way to scalable fault-tolerant quantum computing.
We numerically study the hyperfine induced nuclear spin dynamics in a system of two coupled quantum dots in zero magnetic field. Each of the electron spins is considered to interact with an individual bath of nuclear spins via homogeneous coupling constants (all coupling coefficients being equal). In order to lower the dimension of the problem, the two baths are approximated by two single long spins. We demonstrate that the hyperfine interaction enables to utilize the nuclear baths for quantum information purposes. In particular, we show that it is possible to swap the nuclear ensembles on tim…
Spin qubits in silicon and germanium quantum dots are promising platforms for quantum computing, but entangling spin qubits over micrometer distances remains a critical challenge. Current prototypical architectures maximize transversal interactions between qubits and microwave resonators, where the spin state is flipped by nearly resonant photons. However, these interactions cause back-action on the qubit, that yield unavoidable residual qubit-qubit couplings and significantly affect the gate fidelity. Strikingly, residual couplings vanish when spin-photon interactions are longitudinal and pho…
We propose a solid-state implementation of stimulated Raman adiabatic passage in two coupled semiconductor quantum dots. Proper combination of two pulsed laser fields allows the coherent carrier transfer between the two nanostructures without suffering significant losses due to environment coupling. By use of a general solution scheme for the carrier states in the double-dot structure, we identify the pertinent dot and laser parameters.
Most optical quantum devices require deterministic single-photon emitters. Schemes so far demonstrated in the solid state imply an energy relaxation which tends to spoil the coherent nature of the time evolution, and with it the photon indistinguishability. We focus our theoretical investigation on semiconductor quantum dots embedded in microcavities. Simple and general relations are identified between the photon indistinguishability and the collection efficiency. The identification of the key parameters and of their interplay provides clear indications for the device optimization.
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent …
The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of …
Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative pro…
We present an adiabatic approach to the design of entangling quantum operations with two electron spins localized in separate InAs/GaAs quantum dots via the Coulomb interaction between optically-excited localized states. Slowly-varying optical pulses minimize the pulse noise and the relaxation of the excited states. An analytic "dressed state" solution gives a clear physical picture of the entangling process, and a numerical solution is used to investigate the error dynamics. For two vertically-stacked quantum dots we show that, for a broad range of dot parameters, a two-spin state with concur…
Singlet-triplet states in double quantum dots are promising realizations of qubits, and capacitive coupling can be used to create entanglement between these qubits. We propose an entangling three-qubit gate of singlet-triplet qubits in a triangular setup. Our simulations using a realistic microscopic model show that a maximally entangled Greenberger-Horne-Zeilinger state can be generated as the qubits are evolved under exchange. Furthermore, our analysis for the gate operation can be used to extract the actual experimental pulse sequence needed to realize this.
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed.
We consider the several phenomena which are taking place in Quantum Dots (QD) and Quantum Rings (QR): The connection of the Quantum Chaos (QC) with the reflection symmetry of the QD, Disappearance of the QC in the tunnel coupled chaotic QD, electron localization and transition between Double Concentric QR in the transverse magnetic field, transition of electron from QR to the QD located in the center of QR. Basis of this consideration is the effective Schrödinger equation for the corresponding systems.
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). At the short time limit, electron-phonon interaction only causes an incomplete initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space. A complete long-time exponential decay due t…
Optical techniques for the quantum control of the dynamics of multiexciton states in a semiconductor quantum dot are explored in theory. Composite bichromatic phase-locked pulses are shown to reduce the time of elementary quantum operations on excitons and biexcitons by an order of magnitude or more. Analytic and numerical methods of designing the pulse sequences are investigated. Fidelity of the operation is used to gauge its quality. A modified Quantum Fourier Transform algorithm is constructed with only Rabi rotations and is shown to reduce the number of operations. Application of the desig…
Adiabatic time evolution of degenerate eigenstates of a quantum system provides a means for controlling electronic states since mixing between degenerate levels generates a matrix Berry phase. In the presence of spin-orbit coupling in n-type semiconductor quantum dots the electron Hamiltonian is invariant under time reversal operation and the many body groundstate may be doubly degenerate. This double degeneracy can generate non-Abelian vector potentials when odd number of electrons are present. We find that the antisymmetry of many electron wavefunction has no effect on the matrix Berry phase…
Quantum scars are enhancements of quantum probability density along classical periodic orbits. We study the recently discovered phenomenon of strong, perturbation-induced quantum scarring in the two-dimensional harmonic oscillator exposed to a homogeneous magnetic field. We demonstrate that both the geometry and the orientation of the scars are fully controllable with a magnetic field and a focused perturbative potential, respectively. These properties may open a path into an experimental scheme to manipulate electric currents in nanostructures fabricated in a two-dimensional electron gas.
Existence of representative longitudinal optical (LO) phonon modes is theoretically discussed for the case of polar semiconductor cylindrical quantum dots embedded in a semiconductor matrix. The approach is developed within the dielectric continuum model considering the Fröhlich interaction between electrons and the confined LO phonons. The theory is applied to cylindrical GaAs/AlAs quantum dots within an adiabatic treatment.
More than 80 years passed since the first publication on entangled quantum states. In this period of time the concept of spookily interacting quantum states became an emerging field of science. After various experiments proving the existence of such non-classical states, visionary ideas were put forward to exploit entanglement in quantum information science and technology. These novel concepts have not yet come out of the experimental stage, mostly because of the lack of suitable, deterministic sources of entangled quantum states. Among many systems under investigation, semiconductor quantum d…
We use temporally resolved intensity cross-correlation measurements to identify the biexciton-exciton radiative cascades in a negatively charged QD. The polarization sensitive correlation measurements show unambiguously that the excited two electron triplet states relax non-radiatively to their singlet ground state via a spin non conserving flip-flop with the ground state heavy hole. We explain this mechanism in terms of resonant coupling between the confined electron states and an LO phonon. This resonant interaction together with the electron-hole exchange interaction provides an efficient m…
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomiz…
A set of theoretical results on infrared absorption and inelastic (Raman) scattering of light in semiconductor quantum dots is reviewed. When it is possible, qualitative comparisons with recent experimental results are presented.
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results allow the characterization of the quantum dots as spin switches, controllable with electric gates.
We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.
new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this mechanism is capable of explaining the observed trends in temperature dependences of the intraband relaxation rates for PbSe and CdSe colloidal nanocrystal quantum dots.
Analytical solutions for a tight-binding model are presented for a position-based qubit and N interacting qubits realized by quasi-one-dimensional network of coupled quantum dots expressed by connected or disconnected graphs of any topology in 2 and 3 dimensions where one electron is presented at each separated graphs. Electron(s) quantum dynamic state is described under various electromagnetic circumstances with an omission spin degree-of-freedom. The action of Hadamard and phase rotating gate is given by analytical formulas derived and formulated for any case of physical field evolution pres…
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.
The propagation of a coherent optical linear wave in an ensemble of semiconductor quantum dots is considered. It is shown that a distribution of transition dipole moments of the quantum dots changes significantly the polarization and Beer's absorption length of the ensemble of quantum dots. Explicit analytical expressions for these quantities are presented.
The mechanism of Stokes shift in semiconductor quantum dots is investigated by calculating the energy of the excitonic states. We have taken into account all possible contributions to the total electronic energy in the dot, i.e, dielectric mismatch between dot and surrounding medium, the effects of finite barrier height and electron-hole exchange interaction. The Stokes shift is calculated as a function of radius of dot and compared with experimental data on two different semiconductor based quantum dots. These results provide evidence for exchange splitting of excitonic states, as the mechani…
We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an $8\times8$ $k\cdot p$ Hamiltonian we treat systems based on different III-V semiconductor materials.It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from the THz to optical frequencies.
The effects of interplay between spin-orbit coupling and Zeeman splitting on weak localisation and universal conductance fluctuations in lateral semiconductor quantum dots are analysed: All possible symmetry classes of corresponding random matrix theories are listed and crossovers between them achievable by sweeping magnetic field and changing the dot parameters are described. We also suggest experiments to measure the spin-orbit coupling constants.
We propose an all-optical implementation of quantum-information processing in semiconductor quantum dots, where electron-hole excitations (excitons) serve as the computational degrees of freedom (qubits). The strong dot confinement leads to a strong renormalization of excitonic states, which, in analogy to NMR-based implementations of quantum-information processing, can be exploited for performing conditional and unconditional qubit operations.
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate $T$ that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot …
The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.
The theory of elastic light scattering by semiconductor quantum dots is suggested. The semiclassical method, applying retarded potentials to avoid the problem of bounder conditions for electric and magnetic field, is used. The exact results for the Pointing vector on large distances from a quantum dot, formulas of differential cross sections of light scattering for the monochromatic and pulse irradiation are obtained.
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor …
We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within th…
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
An intense laser pulse propagating in a medium of inhomogeneously broadened quantum dots massively creates entangled exciton states. After passage of the pulse all single-exciton states remain unpopulated (self-induced transparency) whereas biexciton coherence (exciton entanglement) is generated through two-photon transitions. We propose several experimental techniques for the observation of such unexpected behavior.
We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a non-local description of the response function to a spatially modulated electro-magnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found in agreement with recently published experiments.
While time-dependent perturbation theory shows inefficient carrier-phonon scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic description of carrier-phonon interaction predicts fast carrier capture and relaxation. The considered processes do not fulfill energy conservation in terms of free-carrier energies because polar coupling of localized quantum-dot states strongly modifies this picture.
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.
A one-band model within the effective mass approximation is adopted to characterize the energy structure and oscillator strength of type-II semiconductor spherical core-shell quantum dots. The heteroepitaxial strain of the core-shell heterostructure is modeled by the elastic continuum approach. The model is applied to ZnTe/ZnSe core-shell, a wide band gap type-II heterostructure. The simulated absorption spectra are in fair agreement with available experimental results.
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in d…
The ground state Lamb shift of a semiconductor spherical Quantum Dot is computed in the effective mass approximation. It appears to be significant enough to be detectable for a wide range of small Quantum Dots synthesized in semiconductors. A possible way to bserve it, via the Casimir effect, is suggested.
We study phonon-assisted dephasing in optically excited semiconductor quantum dots within the frameworks of the independent Boson model and optimal control. Using a realistic description for the quantum dot states and the phonon coupling, we demonstrate that such dephasing has a drastic impact on the coherent optical response. We employ optimal control theory to search for control strategies that allow to fight decoherence, and show that appropriate tailoring of laser pulses allows a complete control of the optical excitation despite the phonon dephasing.
This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium …
We report the enhancement of the optical second harmonic signal in non-centrosymmetric semiconductor CdS quantum dots, when they are placed in close contact with isolated silver nanoparticles. The intensity enhancement is about 1000. We also show that the enhancement increases when the incoming laser frequency $ω$ is tuned toward the spectral position of the silver plasmon at $2ω$, proving that the silver nanoparticle modifies the nonlinear emission.
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to pro…
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.
We review and extend the composite fermion theory for semiconductor quantum dots in high magnetic fields. The mean-field model of composite fermions is unsatisfactory for the qualitative physics at high angular momenta. Extensive numerical calculations demonstrate that the microscopic CF theory, which incorporates interactions between composite fermions, provides an excellent qualitative and quantitative account of the quantum dot ground state down to the largest angular momenta studied, and allows systematic improvements by inclusion of mixing between composite fermion Landau levels (called $…
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconducto…
The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons $Γ_6 \times Γ_7$ in cubical crystals $T_d$ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping $γ$.
