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arXiv 2202.04281quant-phcond-mat.mes-hall
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具有偏置控制的硅器件中纠缠逻辑的噪声驱动不稳定性的失活

Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls

Hoon Ryu, Ji-Hoon Kang

摘要:

硅中的量子比特(qubit)的质量非常容易受到电荷噪声的影响,电荷噪声在半导体器件中无处不在,并且原则上难以抑制。对于一个实际尺寸的量子点系统的基础上的硅锗异质结构,其限制是操纵与施加在顶部电极上的电偏压,我们计算探讨的噪声鲁棒性的2量子比特纠缠操作的重点是控制X(CNOT)逻辑,这是必不可少的门为基础的通用量子逻辑电路的设计。与器件模拟的基础上增强与电子结构计算的物理体半导体,我们不仅量化的退化的保真度的单步CNOT操作相对于电荷噪声的强度,但也讨论了一种策略的设备工程,可以显着提高噪声鲁棒性的CNOT操作,几乎没有牺牲的速度相比,单步的情况下。这项工作提出的设备设计和控制的细节可以为使用电极驱动的量子点平台保护硅基量子处理器的潜在努力建立一个罕见但实用的指南。

英文摘要:

The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish a rare but practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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