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arXiv 1006.0953cond-mat.mes-hallquant-ph
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利用绝热快速通道在半导体量子点中制备量子态

Quantum state preparation in semiconductor dots by adiabatic rapid passage

Yanwen Wu, I. M. Piper, M. Ediger, P. Brereton, E. R. Schmidgall, M. Hugues, M. Hopkinson, R. T. Phillips

摘要:

特定量子态的制备是量子动力学的各种提议的实际用途的必需步骤。我们报告了一个实验演示的光学量子态制备在半导体量子点与电读出,这与早期的工作的基础上拉比触发的方法是强大的相对于光耦合的变化。我们使用绝热快速通道,它能够将单个点反转到指定的上能级。我们证明了当脉冲功率超过反转阈值时,最终状态与功率无关。这为在半导体点中制备量子态提供了一种新的工具,具有广泛的潜在用途。

英文摘要:

Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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