AI 中文总结
研究GaAs双量子点的空穴-声子耦合，通过实验观测电荷稳定图的振荡条纹并结合理论模型，揭示声子辅助输运机制，为半导体量子点的相关相互作用提供直接认知。
AI 中文摘要
空穴-声子相互作用在半导体量子点的输运和退相干过程中发挥重要作用。本研究利用集成了量子点接触电荷传感器的栅极定义GaAs双量子点，探究空穴-声子耦合。在有限源漏偏压下，电荷稳定图中特定电荷跃迁区域附近出现明显的振荡条纹图案，将这些振荡归因于非弹性点间隧穿过程中的声子发射。包含压电空穴-声子耦合的理论模型可复现观测到的图案，且分析表明振荡仅在特定电荷构型中出现。研究结果为半导体量子点中的声子辅助输运和相干空穴-声子相互作用提供了直接见解。
英文摘要
Hole-phonon interactions play an important role in transport and decoherence processes in semiconductor quantum dots. Here we investigate hole-phonon coupling in a gate-defined GaAs double quantum dot integrated with a quantum point contact charge sensor. Under finite source-drain bias, pronounced oscillatory stripe patterns appear near specific charge transition regions in the charge stability diagram. We attribute these oscillations to phonon emission during inelastic interdot tunneling. A theoretical model including piezoelectric hole-phonon coupling reproduces the observed patterns. Furthermore, our analysis shows that the oscillations emerge only in particular charge configurations. Our results provide direct insight into phonon-assisted transport and coherent hole-phonon interactions in semiconductor quantum dots.
Journal refChin. Phys. Lett. 43, 070602 (2026)
DOI：10.1088/0256-307X/43/7/070602
