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arXiv 1405.2005cond-mat.str-el
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$δ$掺杂的LaAlO $_{3}$ / SrTiO $_{3}$异质结构中增强的持续光电导

Enhanced persistent photoconductivity in $δ$-doped LaAlO$_{3}$/SrTiO$_{3}$ heterostructures

A. Rastogi, J. J. Pulikkotil, R. C. Budhani

摘要:

我们报道了在LaAlO $_{3}$ /SrTiO $_{3}$界面上掺杂$_{3}$对LaMnO $_{3}$单层膜光电导(PC)态的影响.通过将样品暴露于石英灯的宽带光辐射和He-Cd激光的325和441 nm线来实现PC。随着LaMnO $_{3}$亚单层厚度的增加,纯LaAlO $_{3}$ /SrTiO $_{3}$界面从金属到绝缘体的电输运的显著修改,我们还观察到光响应和弛豫时间常数的增强。讨论了基于缺陷团簇、随机势涨落和大晶格弛豫模型的PC的可能方案。对于纯$_{3}$ /$_{3}$,光电导似乎起源于钛衍生的$3d$带(特征为$e_{g}$)和O 2 p-Ti $t_{2g}$杂化带之间的带间跃迁。当引入分数层LaMnO $_{3}$时,能带结构发生显著变化。这里,光电导间隙内的Mn $e_{g}$带(高于费米能的$\approx1.5$ eV)导致光激发能的降低和总光电导性的增益。

英文摘要:

We report the effect of $δ$-doping at LaAlO$_{3}$/SrTiO$_{3}$ interface with LaMnO$_{3}$ monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broad band optical radiation of a quartz lamp and 325 and 441 nm lines of a He-Cd laser. Along with the significant modification in electrical transport which drives the pure LaAlO$_{3}$/SrTiO$_{3}$ interface from metal-to-insulator with increasing LaMnO$_{3}$ sub-monolayer thickness, we also observe an enhancement in the photo-response and relaxation time constant. Possible scenario for the PC based on defect-clusters, random potential fluctuations and large lattice relaxation models have been discussed. For pure LaAlO$_{3}$/SrTiO$_{3}$, the photoconductivity appears to originate from inter-band transitions between Ti-derived $3d$ bands which are $e_{g}$ in character and O 2p - Ti $t_{2g}$ hybridized bands. The band structure changes significantly when fractional layers of LaMnO$_{3}$ are introduced. Here the Mn $e_{g}$ bands ($\approx1.5$ eV above the Fermi energy) within the photo-conducting gap lead to a reduction in the photo-excitation energy and a gain in overall photoconductivity.

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