Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy

Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure

The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the X-ray absorption spectroscopy at Ni L2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface…

UGe$_{2\pm x}$超薄 films的电子结构研究：通过光电能谱法

Electronic Structure of UGe$_{2\pm x}$ Thin Films from Photoelectron Spectroscopy

通过光电能谱法研究UGe$_{2\pm x}$超薄 films的电子结构，发现其金属价带在费米能级处有主导的U-5f贡献，且在不同组成范围内光谱线形无显著变化，DFT+U(ED)计算结果与实验一致，证明UGe$_2$的U-Ge电子框架对中等配比偏差具有鲁棒性。

k-Resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES

Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the heart of current and future electronics. These applications are illustrated here with a …

Kondo effect with tunable spin orbit interaction in LaTiO3/CeTiO3/SrTiO3 heterostructure

We have fabricated epitaxial films of CeTiO3 (CTO) on (001)oriented SrTiO3(STO) substrates, which exhibit highly insulating and diamagnetic properties. X-ray photoelectron spectroscopy (XPS) was to establish the 3+ valence state of the Ve and Ti ions. Furthermore, we also fabricated delta (CTO) doped LatiO3 (LTO)-STO thin films which exhibit variety of interesting properties including Kondo effect and spin orbit interaction (SOI) at low temperatures. SOI shows a non-monotonic behaviour as the thickness of the CTO layer is increased and is reflected in the value of the characteristic SOI field …

k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic…

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. …