arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1905.01550cond-mat.str-el
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Sr2IrO4/LaNiO3异质结构中的界面工程空穴掺杂

Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure

Fangdi Wen, Xiaoran Liu, Qinghua Zhang, M. Kareev, B. Pal, Yanwei Cao, J. W. Freeland, A. T. N'Diaye, P. Shafer, E. Arenholz, Lin Gu, J. Chakhalian

摘要:

相对论性莫特绝缘体Sr_2IrO_4在大自旋轨道相互作用下具有Jeff = 1/2反铁磁态,与超导铜氧化物的母体化合物的电子结构非常相似。在这里,我们报告的实现空穴掺杂Sr 2 IrO 4通过界面电荷转移在Sr 2 IrO 4/LaNiO 3异质结构。Ir 4f边的X射线光电子能谱学和Ni L2边的X射线吸收谱证实了5d电子从Ir位转移到Ni位,导致界面处明显的电子重构。虽然Sr 2 IrO 4/LaNiO 3异质结构仍然是非金属的,我们发现,传输行为不再是由莫特可变范围跳跃模式,但由Efros-Shklovskii模型描述。这些研究结果突出了一个强大的实用程序的接口,以实现新兴的电子状态的Ruddlesden-Popper阶段的Ir基氧化物。

英文摘要:

The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the X-ray absorption spectroscopy at Ni L2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.

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