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arXiv 0705.0498cond-mat.str-elcond-mat.supr-con
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铜氧化物与锰氧化物界面的电子掺杂

Electron Doping of Cuprates via Interfaces with Manganites

S. Yunoki, A. Moreo, E. Dagotto, S. Okamoto, S. S. Kancharla, A. Fujimori

摘要:

本文从理论上讨论了利用异质结构从锰氧化物(或其它氧化物)转移电荷来掺杂未掺杂的高$T_c$铜酸盐。这种可能性主要是通过详细分析的光电发射和扩散电压的实验,位于费米能级的锰氧化物的底部以上的一些铜酸盐母体化合物的上哈伯德带。给出了几种氧化物费米能级和能隙的相对位置图。这里讨论的程序是通用的,允许在几个氧化物界面的电荷流动方向的定性预测。在反铁磁铜氧化物中加入电子可以在界面处形成超导态,并具有最小的淬火无序。使用静态和动态平均场论进行的模型计算,并补充以泊松方程形式来解决界面处的电荷重新分布,支持这一观点。锰氧化物的磁性状态可以是反铁磁性或铁磁性。前者比后者更有利于诱导超导电性,因为自旋极化电荷转移将不利于单重态超导电性。它的结论是,尽管强大的哈伯德间隙,未掺杂的铜氧化物在界面处的电子掺杂似乎是可能的,它的实现可能会打开一个令人兴奋的研究领域在氧化物异质结构。

英文摘要:

The electron doping of undoped high-$T_c$ cuprates via the transfer of charge from manganites (or other oxides) using heterostructure geometries is here theoretically discussed. This possibility is mainly addressed via a detailed analysis of photoemission and diffusion voltage experiments, which locate the Fermi level of manganites above the bottom of the upper Hubbard band of some cuprate parent compounds. A diagram with the relative location of Fermi levels and gaps for several oxides is presented. The procedure discussed here is generic, allowing for the qualitative prediction of the charge flow direction at several oxide interfaces. The addition of electrons to antiferromagnetic Cu oxides may lead to a superconducting state at the interface with minimal quenched disorder. Model calculations using static and dynamical mean-field theory, supplemented by a Poisson equation formalism to address charge redistribution at the interface, support this view. The magnetic state of the manganites could be antiferromagnetic or ferromagnetic. The former is better to induce superconductivity than the latter, since the spin-polarized charge transfer will be detrimental to singlet superconductivity. It is concluded that in spite of the robust Hubbard gaps, the electron doping of undoped cuprates at interfaces appears possible, and its realization may open an exciting area of research in oxide heterostructures.

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