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arXiv 1004.4745cond-mat.supr-concond-mat.str-el
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铜氧化物超导体电子喇曼响应的掺杂和温度依赖性

Doping and temperature dependence of electronic Raman response in cuprate superconductors

Zhihao Geng, Shiping Feng

摘要:

在t-J模型的动能驱动超导机制框架下,研究了铜氧化物超导体中电子喇曼响应的掺杂和温度依赖性。结果表明,在低能位移时,B_{1g}对称性的温度依赖性耗尽比B_{2g}对称性的温度依赖性耗尽快。与掺杂相关的超导转变温度的圆顶形状类似,在欠掺杂区,B_{2g}沟道中的对断裂峰值能量随着掺杂的增加而增加,在最佳掺杂区达到最大值,然后在过掺杂区减小.此外,总体库珀对密度随着欠掺杂区域中的掺杂增加而增加。

英文摘要:

The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the framework of the kinetic energy driven superconducting mechanism for the t-J model. It is shown that the temperature dependent depletion at low-energy shifts is faster in B_{1g} symmetry than in B_{2g} symmetry. In analogy to the domelike shape of the doping dependent superconducting transition temperature, the pair-breaking peak energy in B_{2g} channel increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime. Moreover, the overall Cooper pair density increases with increasing doping in the underdoped regime.

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