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arXiv 1401.7201cond-mat.mtrl-sci
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贫氧外延锰氧化物薄膜表面的金属-绝缘体持久转变

Persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film

Paul C. Snijders, Min Gao, Hangwen Guo, Guixin Cao, Wolter Siemons, Hongjun Gao, Thomas Z. Ward, Jian Shen, Zheng Gai

摘要:

氧的化学计量比对复合氧化物的物理和化学性质有很大的影响。例如催化和电化学中的大多数功能特别取决于氧化学计量的控制。为了了解缺氧复合氧化物的本征表面的基本性质,我们报告在原位温度相关的扫描隧道光谱实验原始缺氧,外延锰氧化物薄膜。虽然这些膜是绝缘的,在随后的非原位在平面内的电子输运实验在所有温度下,原位扫描隧道光谱数据显示,这些膜的表面表现出金属-绝缘体转变(MIT)在120 K,符合铁磁有序的小集群在大部分的缺氧膜的发病。非化学计量比薄膜的表面MIT转变温度与完全氧化的体相的惊人接近表明,在表面区域中的电子性质不会受到体相中氧不足的显著影响。这对理解和功能设计复杂的氧化物及其具有特定电子性质的催化,氧化物电子学和电化学界面具有重要意义。

英文摘要:

The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent ex situ in-plane electronic transport experiments at all temperatures, in situ scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties for catalysis, oxide electronics and electrochemistry.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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