arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2009.07523cond-mat.mtrl-sci
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外延Ruddlesden-Popper Pr $_{0.5}$ Ca $_{1.5}$ MnO $_{4}$薄膜中c轴取向的调整

Tailoring c-axis orientation in epitaxial Ruddlesden-Popper Pr$_{0.5}$Ca$_{1.5}$MnO$_{4}$ films

Sarah Hoffmann-Urlaub, Ulrich Ross, Jörg Hoffmann, Alexandr Belenchuk, Oleg Shapoval, Vladimir Roddatis, Qian Ma, Birte Kressdorf, Vasily Moshneaga, Christian Jooss

摘要:

对Pr $_{0.5}$ Ca $_{1.5}$ MnO $_4$及其薄膜多晶型的层状Ruddlesden-Popper强关联锰氧化物的兴趣是由高于室温的电荷轨道有序的高温激发的。我们报告的定制的c轴取向生长在SrTiO $_3$(STO)衬底上的外延RP-PCMO薄膜具有不同的取向,以及使用的CaMnO $_3$(CMO)缓冲层。STO(110)上的薄膜显示沿[100]方向的c轴的面内取向。在STO(100)上,面内c轴的两个可能方向导致马赛克状准二维纳米结构,其由RP、岩盐和钙钛矿结构单元组成。通过使用CMO缓冲层,实现了具有c轴离面的RP-PCMO外延膜。不同的物理气相沉积技术,即离子束溅射(IBS),脉冲激光沉积(PLD)以及金属有机气溶胶沉积(MAD)的应用,以区分生长条件的影响和内在的外延性能。对于所有的沉积技术,尽管其非常不同的生长条件,表面形态,晶体结构和取向的薄膜揭示了高水平的相似性,通过X射线衍射,扫描和高分辨率透射电子显微镜验证。我们发现,对于不同的外延关系的薄膜中的应力可以通过修改的界面化学放松。通过电阻率测量估计的膜中的电荷排序发生在接近于预期的散装材料中的温度。

英文摘要:

Interest for layered Ruddlesden-Popper strongly correlated manganites of Pr$_{0.5}$Ca$_{1.5}$MnO$_4$ as well as to their thin film polymorphs is motivated by the high temperature of charge orbital ordering above room temperature. We report on the tailoring of the c-axis orientation in epitaxial RP-PCMO films grown on SrTiO$_3$ (STO) substrates with different orientations as well as the use of CaMnO$_3$ (CMO) buffer layers. Films on STO(110) reveal in-plane alignment of the c-axis lying along to the [100] direction. On STO(100), two possible directions of the in-plane c-axis lead to a mosaic like, quasi two-dimensional nanostructure, consisting of RP, rock-salt and perovskite building blocks. With the use of a CMO buffer layer, RP-PCMO epitaxial films with c-axis out-of-plane were realized. Different physical vapor deposition techniques, i.e. ion beam sputtering (IBS), pulsed laser deposition (PLD) as well as metalorganic aerosol deposition (MAD) are applied in order to distinguish between the effect of growth conditions and intrinsic epitaxial properties. For all deposition techniques, despite their very different growth conditions, the surface morphology, crystal structure and orientation of the thin films reveal a high level of similarity as verified by X-ray diffraction, scanning and high resolution transmission electron microscopy. We found that for different epitaxial relations the stress in the films can be relaxed by means of a modified interface chemistry. The charge ordering in the films estimated by resistivity measurements occurs at a temperature close to that expected in bulk material.

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