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arXiv 1208.2741cond-mat.mtrl-scicond-mat.str-el
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Bi-Bi $_2$ Se $_3$无限自适应超晶格相的拓扑绝缘体

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

T. Valla, Huiwen Ji, L. M. Schoop, A. P. Weber, Z. -H. Pan, J. T. Sadowski, E. Vescovo, A. V. Fedorov, A. N. Caruso, Q. D. Gibson, L. Muchler, C. Felser, R. J. Cava

摘要:

我们报告自旋和角度分辨的光电子能谱研究的拓扑绝缘体从元素Bi和Bi $_2$ Se $_3$之间的无限自适应系列。该化合物基于Bi $_4$ Se $_3$,是由Bi $_2$层和Bi $_2$ Se $_3$层交替形成的1:1天然超晶格; S的加入允许大晶体的生长,分子式为Bi $_4$ Se $_{2.6}$ S $_{0.4}$。晶体沿着Bi $_2$和Bi $_2$ Se $_3$层之间的界面裂开,获得的表面具有交替的Bi或Se终端。由此产生的梯田,观察到的光电子发射显微镜,创造适合研究一维拓扑物理学的途径。通过自旋和角度分辨光电子能谱确定的电子结构显示存在表面态,该表面态在表面布里渊区的$Γ$点周围形成大的六边形费米表面,自旋结构表明该材料是拓扑绝缘体。

英文摘要:

We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $Γ$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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