(LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-insulator transition is observed as $n$ is decreased from 4 to 1. Analysis of the transport data suggests an evolution from gapped insulator (n=1) to hopping conductor (n=2) to metal (n=4) with increasing LaNiO3 concentration.
Using density functional theory calculations including a Hubbard $U$ term we explore the effect of strain and confinement on the electronic ground state of superlattices containing the band insulator LaAlO$_3$ and the correlated metal LaNiO$_3$. Besides a suppression of holes at the apical oxygen, a central feature is the asymmetric response to strain in single unit cell superlattices: For tensile strain a band gap opens due to charge disproportionation at the Ni sites with two distinct magnetic moments of 1.45$μ_{\rm B}$ and 0.71$μ_{\rm B}$. Under compressive stain, charge disproportionation …
In pursuit of rational control of orbital polarization, we present a combined experimental and theoretical study of single unit cell superlattices of the correlated metal LaNiO$_3$ and the band insulator LaAlO$_3$. Polarized x-ray absorption spectra show a distinct asymmetry in the orbital response under strain. A splitting of orbital energies consistent with octahedral distortions is found for the case of compressive strain. In sharp contrast, for tensile strain, no splitting is found although a strong orbital polarization is present. Density functional theory calculations including a Hubbard…
Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh- and lh- states of the valence band, the joint strain and confinement effects on the hh1- lh1 splitting being strongly influenced by the tunneling in the barriers. In strained structures with high barriers for the holes initial polarization can exceed 95 %. Calculated po…
Moiré superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated. In this scanning tunneling microscopy and density functional theory study, we have analysed graphene samples grown on multilayer graphene prepared onto SiC and on the close-packed surfaces of Re and Ir with ultra-high precision. We resolve small-angle twists and shears in graphene, and identify large unit cells comprising more than 1,000 carbon atoms and exhi…
The effect of layer-by-layer heterostructuring and epitaxial strain on lattice instabilities and related ferroelectric properties is investigated from first principles for the [001]-(PbTiO$_3$)$_1$(PbZrO$_3$)$_1$ superlattice and pure PbTiO$_3$ on a cubic substrate. The results for the superlattice show an enhancement of the stability of the monoclinic r-phase with respect to pure PbTiO$_3$. Analysis of the lattice instabilities of the relaxed centrosymmetric reference structure computed within density functional perturbation theory suggests that this results from the presence of two unstable …
By using DFT+U, we explore the formation of oxygen vacancies and their impact on the electronic and magnetic structure in strained bulk LaNiO3 and (LaNiO3)$_1$/(LaAlO3)$_1$(001) superlattices. For bulk LaNiO3, we find that epitaxial strain induces a substantial anisotropy in the oxygen vacancy formation energy. In particular, tensile strain promotes the selective reduction of apical oxygen, which may explain why the recently observed superconductivity of infinite-layer nickelates is limited to strained films. For (LaNiO3)$_1$/(LaAlO3)$_1$(001) superlattices, the simulations reveal that the NiO…
A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. Our technique allows the formation of multi-period inorganic/organic hybrid heterostructures. This paper contains the detailed experimental description of how to fabricate these structures.
Emergence of unconventional magnetic order in strain-engineered RuO2/TiO2 superlattices
University of Minnesota−Twin Cities（明尼苏达大学双城分校）；University of Minnesota（明尼苏达大学）；Sungkyunkwan University（成均馆大学）；Massachusetts Institute of Technology（麻省理工学院）；National Institute of Standards and Technology（美国国家标准与技术研究院）；Oak Ridge National Laboratory（橡树岭国家实验室）
In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlattices (SLs) beyond this relation. Using two independent theoretical modeling approaches, we show that new bands form due to the structural symmetry, and, the SL bands are highly tunable with epitaxial substrate strain. The band shifts lead to a modulated thermopower, with a peak $\sim$5-fold enhancement in strained Si/Ge SLs in the high doping regim…
Time resolved spin-polarized electron photoemission spectra are investigated as a function of excitation pulse energy for the heterostructures with a single strained layer and with a strained-well superlattice. At an average current exceeding 10 nA the emission pulse profiles are modified by the space charge pulse expansion during the electron transport to detector. The pulse expansion enables the separation of electrons that have spent minimum time in the sample. For the superlattice structure these electrons showed maximum polarization above 90 %. Variation in the pulse profiles for the two …
Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer layers. The films deposited on YAO contained 45 degree in-plane rotated grains and showed a broad superconducting transition. The onset Tc of the films is observed to increase from 16.2 K to 24.5 K with increasing c/a, mainly due to a slight distortion of the AsFe4 tetrahedron. From this correlation, we expect that higher superconducting transition temperatur…
We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth are layer-by-layer with hexagonal symmetry. Electron and x-ray diffraction measurements indicate the Al2O3 initially grows clamped to the Nb lattice with a tensile strain near 10%. This strain relaxes with further deposition, and beyond about 5 nm we observe the onset of island growth. Despite the asymmetric misfit between the Al2O3 film and the Nb under-laye…
Epitaxial La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 superlattices on (001)-oriented LaSrAlO4 substrates have been grown with pulsed laser deposition technique. Their structural, magnetic and superconducting properties have been determined with in-situ reflection high energy electron diffraction, x-ray diffraction, specular neutron reflectometry, scanning transmission electron microscopy, electric transport, and magnetization measurements. We find that despite the large mismatch between the in-plane lattice parameters of LSCO and LCMO these superlattices can be grown epitaxially and with a high crystalli…
