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arXiv 0704.0118cond-mat.supr-concond-mat.mtrl-sci
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在Nb(110)薄膜上逐层生长的应变单晶Al2O3

Strained single-crystal Al2O3 grown layer-by-layer on Nb (110) thin films

Paul B. Welander, James N. Eckstein

摘要:

本文报道了在Nb(110)衬底上逐层生长Al_2O_3单晶薄膜的实验结果。首先在A面蓝宝石上制备单晶Nb薄膜,然后在O2背景下蒸发Al。Al2O3生长的第一阶段是逐层的,具有六方对称性。电子和X射线衍射测量表明,Al2O3最初生长夹持到Nb晶格的拉伸应变接近10%。该应变随着进一步沉积而松弛,并且超过约5nm,我们观察到岛生长的开始。尽管Al2O3膜和Nb下层之间存在不对称的失配,但观察到的应变是令人惊讶的各向同性的。

英文摘要:

We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth are layer-by-layer with hexagonal symmetry. Electron and x-ray diffraction measurements indicate the Al2O3 initially grows clamped to the Nb lattice with a tensile strain near 10%. This strain relaxes with further deposition, and beyond about 5 nm we observe the onset of island growth. Despite the asymmetric misfit between the Al2O3 film and the Nb under-layer, the observed strain is surprisingly isotropic.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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