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arXiv 0810.1441cond-mat.str-elcond-mat.mtrl-sci
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$(LaMnO_3)_{2n}/(SrMnO_3)_n$超晶格中的金属-绝缘体转变

Metal-insulator transition in $(LaMnO_3)_{2n}/(SrMnO_3)_n$ superlattices

Shuai Dong, Rong Yu, Seiji Yunoki, Gonzalo Alvarez, J. -M. Liu, Elbio Dagotto

摘要:

利用双交换模型的蒙特卡罗模拟研究了(LaMnO $_3$)$_{2n}$ /(SrMnO $_3$)$_n$($n$ =1-4)超晶格中电荷密度和自旋序的调制.发现在SrMnO $_{3}$区域中具有低电荷密度的G型反铁磁势垒分离具有高电荷密度的铁磁LaMnO $_{3}$层。最近实验观察到的金属-绝缘体转变与增加$n$再现在我们的研究中,和$n=3$被发现是临界值。

英文摘要:

The modulation of charge density and spin order in (LaMnO$_3$)$_{2n}$/(SrMnO$_3$)$_n$ ($n$=1-4) superlattices is studied via Monte Carlo simulations of the double-exchange model. G-type antiferromagnetic barriers in the SrMnO$_{3}$ regions with low charge density are found to separate ferromagnetic LaMnO$_{3}$ layers with high charge density. The recently experimentally observed metal-insulator transition with increasing $n$ is reproduced in our studies, and $n=3$ is found to be the critical value.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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