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arXiv 1202.2886cond-mat.mtrl-scicond-mat.mes-hall
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具有增强载流能力的石墨烯/金刚石器件:碳sp2-on-sp3技术

Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Jie Yu, Guanxiong Liu, Anirudha V. Sumant, Vivek Goyal, Alexander A. Balandin

摘要:

石墨烯因其优异的电学和热学性能而显示出潜在的实际应用价值。构建在常规SiO2/Si衬底上的典型石墨烯场效应晶体管和互连揭示了大约1 uA/nm 2(即10^8 A/cm 2)的击穿电流密度,其比金属的基本极限大~100 \times,但仍小于碳纳米管中实现的最大值。我们表明,通过用合成金刚石取代SiO2,即使在环境条件下,也可以将石墨烯的载流能力大幅提高至高达~18 uA/nm 2。我们的研究结果表明,石墨烯的电流诱导击穿是热激活的。我们还发现,石墨烯的载流能力不仅可以在单晶金刚石衬底上提高,而且可以在廉价的超纳米晶金刚石上提高,该超纳米晶金刚石可以在与传统Si技术兼容的工艺中生产。后者是由于在升高的温度下的超纳米晶金刚石层的热阻降低。所获得的结果对于石墨烯在高频晶体管、互连、透明电极中的应用是重要的,并且可以导致新的平面sp2-on-sp3碳-碳技术。

英文摘要:

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown current density on the order of 1 uA/nm2 (i.e. 10^8 A/cm2) which is ~100\times larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO2 with synthetic diamond one can substantially increase the current-carrying capacity of graphene to as high as ~18 uA/nm2 even at ambient conditions. Our results indicate that graphene's current-induced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphene's applications in high-frequency transistors, interconnects, transparent electrodes and can lead to the new planar sp2-on-sp3 carbon-on-carbon technology.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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