Free electron theory tells us that resistivity is independent of magnetic field. In fact, most observations match the semiclassical prediction of a magnetoresistance that is quadratic at low fields before saturating. However, a non-saturating linear magnetoresistance has been observed in exotic semiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs, MnAs-GaAs composites, PrFeAsO, and epitaxial graphene. Here we report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer. It is well-described by a classical model of spatially fluctuating donor densities, and may be amplified by altering the aspect ratio of the sample to enhance current-jetting: increasing the width tenfold increased the magnetoresistance at 8 T from 445 % to 4707 % at 35 K. This physical picture may well offer insights into the large magnetoresistances recently observed in n-type and p-type Si in the non-ohmic regime.
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance ($\sim 20$\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppress…
We report on a high-field magnetotransport study of KTaO3 single crystals. This material is a promising candidate to study in the extreme quantum limit (EQL). By photocarrier doping with 360 nm light, we have observed a significant positive, non-saturating, and linear magnetoresistance at low temperatures accompanied by a vanishing Hall coefficient. When cooled down to 10 K and subjected to a magnetic field of 12 T, the value of magnetoresistance of KTaO3 (100) is increased by as much as 433%. Such behavior can be attributed to all electrons occupying only the lowest Landau level in the EQL. I…
Elucidating the nature of the large, non-saturating magnetoresistance in WTe2 is a significant step in functionalizing this phenomenon for applications. Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent and aliovalent substitutions have different effects on the large magnetoresistance. By 1% substitution, isoelectronic doping reduces the magnetoresistance by a factor of 1.2 with an apparent linear trend, whereas aliovalent doping reduces the effect by over an order of magnitude while following a higher-order decay. The apparent increased sensitivity of the magnetoresi…
The doping of the manganese site by iridium (up to 15%) in the small A cation manganites Pr_{1-x}Ca_xMnO_3 (0.4 < x < 0.8), has been investigated as a new method to suppress charge-ordering and induce CMR effects. Ir doping leads to ferromagnetism and to insulator to metal transitions, with high transition temperatures reaching 180K and CMR ratio in 7T as large as 10^4. The efficiency with which iridium induces ferromagnetism and CMR is compared to previous results obtained with other substitutions (Ru, Rh, Ni, Cr, ...). The ionic radius of the foreign cations and their mixed-valencies are fou…
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically 10-80%) in electrical resistance in the presence of a magnetic field. The effect is exploited commercially by manufacturers of hard disk drives. The 2007 Nobel Prize in physics was awarded to Albert Fert and Peter Grunberg for the discovery of GMR.
Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's function formalism, we investigate the negative differential resistance effect in organic spintronics at low temperature and interprete it with a self-doping picture. A giant negative magnetoresistance exceeding 300% is theoretically predicted as the results of the negative differential resistance effects.
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two magnetic insulators (using EuO, EuS, or YIG) and three coating gates. Two top gates are used to cancel the heavy electron doping's in these magnets and one back gate is used to utilize the normal or half-metallic ferromagnetisms. We demonstrate that, when the second top gate is tuned to utilize the insulating or spin insulating states, huge giant magnetoresist…
A new ferromagnetic semiconductor system of Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ compounds: Crystallographic, magnetic, and magneto-resistive properties
By performing angle-resolved photoemission spectroscopy of the bilayer colossal magnetoresistive (CMR) manganite, $La_{2-2x}Sr_{1+2x}Mn_{2}O_{7}$, we provide the complete mapping of the Fermi level spectral weight topology. Clear and unambiguous bilayer splitting of the in-plane 3d$_{x^2-y^2}$ band, mapped throughout the Brillouin zone, and the full mapping of the 3d$_{3z^2-r^2}$ band are reported. Peculiar doping and temperature dependencies of these bands imply that as transition from the ferromagnetic metallic phase approaches, either as a function of doping or temperature, coherence along …
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR, and electrons show only the normal Ha…
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping which not only breaks the balance between electron-type and hole-type carrier densitie…
Present work reports a detailed investigation on the magnetoresistance and magnetocaloric behavior of Ni and Cr-doped Mn$_5$Si$_3$ alloys with general formula Mn$_{5-x}$A$_x$Si$_3$ (where A = Ni/Cr; $x$ = 0, 0.05, 0.1 and 0.2). Both pure (undoped) and doped alloys show a reasonably large amount of magnetoresistance (MR). Doping at Mn-site, both by Ni and Cr, results in a monotonic decrease in MR values. Magnetocaloric effect (MCE), on the other hand, is found to be interesting, and all the alloys show both conventional and inverse MCE around the magneto-structural transition temperature. Among…
In this study we present a new method of measuring magnetostriction with an atomic force microscope adapted for the application magnetic fields. The experiment allows us to visualise, in an elegant and educational way how the lateral magnetoelastic shape changes take place on the sample surface when a magnetic field is applied. We have, furthermore, used this technique to observe magnetically induced strains as small as 5*10-8, and have measured Ni, permalloy and commercial Cu wires and films, as well as pure Cu and Pt wires, where results are in agreement with other methods of measurement. Th…
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.
We report here the charge transport behavior in graphene nanojunctions in which graphene nanodots, with relatively long relaxation time, are interfaced with ferromagnetic electrodes. Subsequently we explore the effect of substitutional doping of transition metal atoms in zigzag graphene nanodots (z-GNDs) on the charge transport under non-collinear magnetization. Only substitutional doping of transition metal atoms in z-GNDs at certain sites demonstrates the spin filtering effect with a large tunnelling magnetoresistance as high as 700%, making it actually suitable for spintronic applications. …
Using electrically detected magnetic resonance spectroscopy, we demonstrate that doping the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) with ethylene glycol allows for the control of effective local charge carrier hyperfine fields through motional narrowing. These results suggest that doping of organic semiconductors could enable the tuning of macroscopic material properties dependent on hyperfine fields such as magnetoresistance, the magneto-optical responses and spin-diffusion.
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) as giant as ~ 160% in a simple resistor structure made of AFM Sr2IrO4 without auxiliary reference layer. The underlying mechanism for the giant AMR is a…
The structure, electronic, and magnetic properties of the Mo-doped perovskite La0.7Ca0.3Mn1-xMoxO3 (x < 0.1) have been studied. A significant increase in resistivity and lattice parameters were observed with Mo doping. A marginal decrease in the Curie temperature Tc and the associated metal-insulator transition Tp were observed. Magnetization data reveal that long-range ferromagnetic ordering persists in all samples studied and the saturation moment decreases linearly as x increases. Enhancement in magnetoresistance at near Tc in the Mo-doped compounds with an optimum doping value x = 0.05 was…
Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstrate the robustness of topological surface states (TSS) to the presence of disorder that does not break any fundamental symmetry. The simple straightforward method of FIB milling was used to synthesize nanowires of Bi2Se3 which we believe an interestin…
Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of the movement of Fermi level from bulk conduction band to the bulk valence band. Thermoelectric power also increaseswith doping of Cu.Moreover linear magnetoresistance (LMR) has been observed at high ma…
A complex structural, magnetic and electric transport investigation shows that the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3 provokes a non-uniform magnetic state with coexisting FM and AFM regions. Irrespective of the ratio of magnetic phases, the samples exhibit a non-metallic behavior of resistivity and thermopower, pointing to the nanoscopic nature of the phase separation. A particularly large magnetoresistance encountered in a broad range of temperatures for samples with Cr doping of 4 - 6 % supports such idea.
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicat…
While the discovery of Dirac and Weyl type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications, is an experimental challenge. In all the reported materials, linear dispersion survives only up to a few hundred meV from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, ARPES measurements have shown an unusually robust linear dispe…
Magnetoresistance (MR) sensors provide cost-effective solutions for diverse industrial and consumer applications, including emerging fields such as internet-of-things (IoT), artificial intelligence and smart living. Commercially available MR sensors such as anisotropic magnetoresistance (AMR) sensor, giant magnetoresistance (GMR) sensor and tunnel magnetoresistance (TMR) sensors typically require an appropriate magnetic bias for both output linearization and noise suppression, resulting in increased structural complexity and manufacturing cost. Here, we demonstrate an all-in-one spin Hall magn…
The effect of doping of rare earth Gd 3+ ion replacing Nd 3+ in Nd0.7Sr0.3MnO3 is investigated in details. Measurements of resistivity, magnetoresistance, magnetization, linear and non linear ac magnetic susceptibility on chemically synthesized (Nd0.7-xGdx)Sr0.3MnO3 shows various interesting features with doping level x=0.3. Comparative study has been carried out between a bulk and a nanometric sample (grain size ~ 60 nm) synthesized from the same as prepared powder to maintain identical stoichiometry. Resistivity of the samples shows strong dependence on the magnetic field - temperature histo…
We have investigated the effect of Ti doping on the transport properties coupled with the magnetic ones in Sm$_{0.55}$Sr$_{0.45}$Mn$_{1-η}$Ti$_η$O$_3$ ($0 \leq η\leq 0.04$). The parent compound, Sm$_{0.55}$Sr$_{0.45}$MnO$_3$, exhibits a first-order paramagnetic-insulator to ferromagnetic-metal transition just below $T_{\rm c}$ = 128 K. With substitution of Ti at Mn sites ($B$-site), $T_{\rm c}$ decreases approximately linearly at the rate of 22 K$\%^{-1}$ while the width of thermal hysteresis in magnetization and resistivity increases almost in an exponential fashion. The most spectacular effe…
The crystallographic and magnetic phase diagram of the n=2 layered manganite La2-2xSr1+2xMn2O7 in the region x=>0.5 has been studied using temperature dependent neutron powder diffraction. The magnetic phase diagram reveals a progression of ordered magnetic structures generally paralleling that of 3-D perovskites with similar electronic doping: A (0.5<=x<=0.66) --> C (0.75<=x<=0.90) --> G (0.90<=x<=1.0). However, the quasi-2-D structure amplifies this progression to expose features of manganite physics uniquely accessible in the layered systems: (a) a "frustrated" region between the A and C re…
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. Magnetism, however, can also emerge in perfect lattices from non-magnetic elements. For instance, flat band systems with high density of states (DOS) may develop spontaneous magnetic ordering, as exemplified by the Stoner criterion. Here we report tunable magnetism in rhombohedra…
Electrically Accessible Metamagnetic Transition via a Doping-Induced Low-Energy Magnetic State in Antiferromagnetic Insulator RFeO3
Materials Genome Institute, Institute of Quantum Science and Technology, International Center for Quantum and Molecular Structures, Shanghai University（上海大学材料基因组研究所、量子科学技术研究院、国际量子与分子结构中心）；School of Material Science and Engineering, Shanghai University（上海大学材料科学与工程学院）；Institute of Physics, Shanghai University（上海大学物理系）
We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulation of the space-charge capacitance at the metal-semiconductor junction - current-voltage and capacitan…
PtBi2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real stoichiometry of samples. We find significant electron doping in PtBi2, implying a substantial Bi …
To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the strength of the magnetic field and carrier density via In doping. With the increase in magnetic field, the scattering time crosses over from being nearly energy independent to a regime of linear dependence.…
