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arXiv 1502.02264cond-mat.str-elcond-mat.mtrl-sci
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三维狄拉克半金属Cd $_{3}$ As $_{2}$散射机制的调谐

Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$

A. Pariari, N. Khan, R. Singha, B. Satpati, P. Mandal

摘要:

为了探讨Cd $_{3}$ As $_{2}$单晶中的电荷散射机制,我们分析了Seebeck系数($S$)与温度和磁场的关系.高场下$S$的大饱和值清楚地表明了三维狄拉克费米子的线性能量色散。通过In掺杂改变磁场的强度和载流子密度,实现了电荷散射机制的宽调谐性。随着磁场的增加,散射时间从几乎与能量无关过渡到与能量线性相关。另一方面,在Cd位掺杂2% In后,散射时间进入反能量依赖区,费米面发生了强烈的变化。当In含量从2%增加到4%时,在9 T磁场下没有观察到Shubnikov-deHaas振荡,但磁电阻与未掺杂样品一样大。

英文摘要:

To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the strength of the magnetic field and carrier density via In doping. With the increase in magnetic field, the scattering time crosses over from being nearly energy independent to a regime of linear dependence. On the other hand, the scattering time enters into the inverse energy-dependent regime and the Fermi surface strongly modifies with 2\% In doping at Cd site. With further increase in In content from 2 to 4\%, we did not observe any Shubnikov-de Haas oscillation up to 9 T field, but the magnetoresistance is found to be quite large as in the case of undoped sample.

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