半导体上的电润湿
Electrowetting on a semiconductor
摘要：
我们报道了半导体上的电润湿使用的汞液滴停留在硅表面。使用不同掺杂水平的商业n型和p型单晶（100）硅晶片证明了该效果。电润湿是可逆的-观察到汞滴的电压依赖性润湿接触角变化取决于底层半导体掺杂密度和类型。的电润湿行为的解释，在金属-半导体结-电流-电压和电容-电压-频率的测量表明，这是由空间电荷电容的电压依赖性调制的情况。结合金属-半导体结电容和Young-Lippmann电润湿方程的模型与观测结果吻合得很好。
英文摘要：
We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulation of the space-charge capacitance at the metal-semiconductor junction - current-voltage and capacitance-voltage-frequency measurements indicate this to be the case. A model combining the metal-semiconductor junction capacitance and the Young-Lippmann electrowetting equation agrees well with the observations.
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