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arXiv 1104.3010cond-mat.mtrl-sci
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圆柱形纳米线中横向畴壁的增强自旋转移矩效应

Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

Matteo Franchin, Andreas Knittel, Maximilian Albert, Dmitri Chernyshenko, Thomas Fischbacher, Anil Prabhakar, Hans Fangohr

摘要:

最近的研究预测了圆柱形纳米线中横向畴壁的非凡特性:零脱钉电流,不存在Walker击穿,以及作为畴壁振荡器的应用。为了可靠地控制畴壁运动,了解它们如何与能垒相互作用是很重要的。本文研究了铁磁圆柱形纳米线中横畴壁穿过势垒的运动和脱钉。我们使用磁场和自旋极化电流来驱动沿着导线的畴壁。使用磁场,我们发现,所需的最小和最大的领域,推动畴壁通过障碍相差30%。相反,使用自旋极化电流,我们发现的最小值的脱钉电流密度和最大值之间的一个因素130的变化。我们研究了脱钉电流密度作为势垒高度的函数,使用数值和分析方法。我们发现,对于势垒为40kBT的畴壁,约5 μ A的脱钉电流密度就足以使畴壁脱钉。我们揭示和解释的机制,导致这些异常低的脱钉电流。这种新的脱钉机制的一个要求是畴壁能够绕其自身的轴旋转。通过正确的势垒设计,自旋扭矩传递项正好作用于微磁系统中的阻尼,因此低电流密度足以快速积累足够的能量。这些关键的见解可能是至关重要的,在进一步发展新的存储器技术,如赛道存储器,可以通过低电流密度控制。

英文摘要:

Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with energy barriers. In this paper, we study the motion and depinning of transverse domain walls through potential barriers in ferromagnetic cylindrical nanowires. We use magnetic fields and spin-polarized currents to drive the domain walls along the wire. Using magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the barrier differ by 30 %. On the contrary, using spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density and the maximum value. We study the depinning current density as a function of the height of the energy barrier using numerical and analytical methods. We find that, for a barrier of 40 k_B T, a depinning current density of about 5 uA is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this new depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design, the spin torque transfer term is acting exactly against the damping in the micromagnetic system, and thus the low current density is sufficient to accumulate enough energy quickly. These key insights may be crucial in furthering the development of novel memory technologies, such as the racetrack memory, that can be controlled through low current densities.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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