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arXiv 1102.2241astro-ph.IM
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硅探测器设计中使用的UV抗反射涂层

UV anti-reflection coatings for use in silicon detector design

Erika T. Hamden, Frank Greer, Michael E. Hoenk, Jordana Blacksberg, Matthew R. Dickie, Shouleh Nikzad, Christopher D. Martin, David Schiminovich

摘要:

我们报告的CCD检测器的涂层的发展优化用于固定色散紫外光谱仪。由于Si的折射率快速变化,单层宽带抗反射涂层不适合在所有感兴趣的波长处增加量子效率。相反,我们描述了一种创造性的解决方案,它在UV波长上提供了出色的性能。我们描述了在120至300 nm波长处理论量子效率(QE)大于60%的CCD探测器的发展进展。这种高效率可以通过用一系列薄膜抗反射涂层涂覆背面照明的、减薄的、δ掺杂的CCD来实现。测试的材料包括MgF 2(针对120- 150 nm的最高性能进行了优化)、SiO2(150- 180 nm)、Al 2 O3(180- 240 nm)、MgO(200- 250 nm)和HfO 2(240- 300 nm)。各种沉积技术进行了测试,并选择的涂层,最大限度地减少硅测试晶片上的反射率被施加到生活设备。我们还讨论了未来的用途和改进,包括梯度和多层涂层。

英文摘要:

We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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