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arXiv 1701.02733astro-ph.IM
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在UV波长下具有高量子效率的电荷耦合器件探测器

Charge Coupled Device detectors with high quantum efficiency at UV wavelengths

Erika T. Hamden, April D. Jewell, Charles A. Shapiro, Samuel R. Cheng, Tim M. Goodsall, John Hennessy, Michael Hoenk, Todd Jones, Sam Gordon, Hwei Ru Ong, David… 展开作者

Erika T. Hamden, April D. Jewell, Charles A. Shapiro, Samuel R. Cheng, Tim M. Goodsall, John Hennessy, Michael Hoenk, Todd Jones, Sam Gordon, Hwei Ru Ong, David Schiminovich, D. Christopher Martin, Shouleh Nikzad

摘要:

我们报告多层高效减反射膜(ARC)的设计和开发,用于在紫外波长的CCD和其他硅基探测器。我们之前已经展示了一组单层涂层,其在130至300 nm的四个波段中实现了>50%的量子效率(QE)。我们现在提出的多层涂层设计,显着优于我们以前的工作之间的195和215 nm。使用多达11层,我们提出了几种模型设计,以达到80%以上的QE。我们还展示了成功的性能5和11层ARC硅和熔融石英基板上。最后,我们提出了一个五层涂层,ING沉积到一个薄的,δ掺杂的CCD和证明外部QE大于60%之间的202和208 nm,峰值为67.6%,在206 nm。

英文摘要:

We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coat- ing deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm.

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