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arXiv 1009.5328cond-mat.mtrl-scicond-mat.other
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点缺陷石墨烯中的声子

Phonons in graphene with point defects

Vadym M Adamyan, Vladimir V Zavalniuk

摘要:

考虑了不同类型的点缺陷(碳同位素、替代原子、空位)对石墨烯声子态密度的影响。使用一个可解的模型,这是基于谐波近似和假设的弹性力只作用在最近的相邻离子之间,我们计算校正石墨烯DOS依赖于类型和浓度的缺陷。特别是由于同位素二聚体的校正确定。结果表明,一个相对较小的浓度的缺陷可能会导致显着的和具体的DOS的变化,特别是在低频率,附近的Van Hove点和在附近的K点的布里渊区。在某些情况下,缺陷在声子态密度的临界点附近产生一个或多个窄隙,以及在布里渊区规则点处产生共振态。所有类型的缺陷的特征在于在(Dirac)K点附近出现一个或多个额外的Van Hove峰,并且它们的奇异贡献可以与电子-声子相互作用的效果相比较。此外,对于低频和临界点附近,态密度的相对变化可能比缺陷浓度高许多倍。

英文摘要:

The phonon density of states (DOS) of graphene with different types of point defects (carbon isotopes, substitution atoms, vacancies) is considered. Using a solvable model which is based on the harmonic approximation and the assumption that the elastic forces act only between nearest neighboring ions we calculate corrections to graphene DOS dependent on type and concentration of defects. In particular the correction due to isotopic dimers is determined. It is shown that a relatively small concentration of defects may lead to significant and specific changes in the DOS, especially at low frequencies, near the Van Hove points and in the vicinity of the K-points of the Brillouin zone. In some cases defects generate one or several narrow gaps near the critical points of the phonon DOS as well as resonance states in the Brillouin zone regular points. All types of defects are characterized by the appearance of one or more additional Van Hove peaks near the (Dirac) K points and their singular contribution may be comparable with the effect of electron-phonon interaction. Besides, for low frequencies and near the critical points the relative change in density of states may be many times higher than the concentration of defects.

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