We present a theory of excitonic processes in gate controlled graphene quantum dots. The dependence of the energy gap on shape, size and edge for graphene quantum dots with up to a million atoms is predicted. Using a combination of tight-binding, Hartree-Fock and configuration interaction methods, we show that triangular graphene quantum dots with zigzag edges exhibit optical transitions simultaneously in the THz, visible and UV spectral ranges, determined by strong electron-electron and excitonic interactions. The relationship between optical properties and finite magnetic moment and charge density controlled by an external gate is predicted.
Formation of excitonic states in quantum dots of nitride based III-V semiconductors GaN and AlN including coulomb and exchange interactions are investigated. Dark exciton formation is found to occur for both GaN quantum dots(QDs) with wurtzite structure having positive crystal field splitting and GaN and AlN QDs with zero crystal field splitting with a transition from dark to bright exciton at about 40Å. In wurtzite AlN QDs with negative crystal field splitting the splitting between the dark and bright excitonic states is very small and vanishes at about 15Å.
Dielectric screening is greatly important to an accurate calculation of the exciton binding energies in two-dimensional materials. In this work, we calculate the dielectric function and 2D polarizability of multilayer (up to three) phosphorene sheets using Density Functional Theory. The 2D polarizabilities are then used in the dielectric screening of the excitonic interaction in multilayer phosphorene quantum dots. In the limit of large quantum dots, excitonic gaps are shown to exhibit very good agreement with state-of-the-art measurements of the optical gaps of multilayer phosphorene sheets d…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy…
We have studied the excitonic gap formation in the Bernal Stacked, bilayer graphene (BLG) structures at half-filling. Considering the local Coulomb interaction between the layers, we calculate the excitonic gap parameter and we discuss the role of the interlayer and intralayer Coulomb interactions and the interlayer hopping on the excitonic pair formation in the BLG. Particularly, we predict the origin of excitonic gap formation and condensation, in relation to the farthermost interband optical transition spectrum. The general diagram of excitonic phase transition is given, explaining differen…
Electron interactions in undoped bilayer graphene lead to instability of the gapless state, `which-layer' symmetry breaking, and energy gap opening at the Dirac point. In contrast to single layer graphene, the bilayer system exhibits instability even for arbitrarily weak interaction. A controlled theory of this instability for realistic dynamically screened Coulomb interactions is developed, with full acount of dynamically generated ultraviolet cutoff. This leads to an energy gap that scales as a power law of the interaction strength, making the excitonic instability readily observable.
Two graphene monolayers that are oppositely charged and placed close to each other are considered. Taking into account valley and spin degeneracy of electrons we analyze the symmetry of the excitonic insulator states in such a system and build a phase diagram that takes into account the effect of the symmetry breaking due to the external in-plane magnetic field and the carrier density imbalance between the layers.
We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uni-axial stress control. In the formalisms, stressing a photo-excited quantum dot is equivalent creating a pseudo-magnetic field that is directly coupled to the pseudo-spin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band-mixing of exciton that is especially sensitive to …
The influence of screening on the condensed state of bilayer graphene is studied within the framework of the Thomas Fermi approximation. We find that screening has little effect on the Kosterlitz-Thouless temperature in the strongly interacting regime. Furthermore, we predict that the phase transition to the condensed state is first order.
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.
In a quantum dot with dozens of electrons, an approximation beyond Tamm-Dankoff is used to construct the quantum states with an additional electron-hole pair, i.e. the "excitonic" states. The lowest states mimic the non-interacting spectrum, but with excitation gaps renormalized by Coulomb interactions. At higher excitation energies, the computed density of energy levels shows an exponential increase with energy. In the interband absorption, we found a background level in the quasicontinuum of states rising linearly with the excitation energy. Above this background, there are distinct peaks re…
We study the effect of electron-electron interactions in the optical conductivity of graphene under applied bias and derive a generalization of Elliot's formula, commonly used for semiconductors, for the optical intensity. We show that {\it excitonic resonances} are responsible for several features of the experimentally measured mid-infrared response of graphene such as the increase of the conductivity beyond the "universal" value above the Fermi blocked regime, the broadening of the absorption at the threshold, and the decrease of the optical conductivity at higher frequencies. Our results ar…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group…
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to…
Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graph…
We present a first-principles calculation of the optical properties of armchair-edged graphene nanoribbons (AGNRs) with many-electron effects included. The reduced dimensionality of the AGNRs gives rise to an enhanced electron-hole binding energy for both bright and dark exciton states (0.8-1.4 eV for GNRs with width w ~ 1.2 nm) and dramatically changes the optical spectra owing to a near complete transfer of oscillator strength to the exciton states from the continuum transitions. The characteristics of the excitons of the three distinct families of AGNRs are compared and discussed. The enhan…
Second order perturbation theory and a Lipkin-Nogami scheme combined with an exact Monte Carlo projection after variation are applied to compute the ground-state energy of $6\le N\le 210$ electron-hole pairs confined in a parabolic two-dimensional quantum dot. The energy shows nice scaling properties as N or the confinement strength is varied. A crossover from the high-density electron-hole phase to the BCS excitonic phase is found at a density which is roughly four times the close-packing density of excitons.
We investigate the role of electron-hole correlations in the absorption of freestanding monolayer and bilayer graphene using optical transmission spectroscopy from 1.5 to 5.5 eV. Line shape analysis demonstrates that the ultraviolet region is dominated by an asymmetric Fano resonance. We attribute this to an excitonic resonance that forms near the van-Hove singularity at the saddle point of the band structure and couples to the Dirac continuum. The Fano model quantitatively describes the experimental data all the way down to the infrared. In contrast, the common non-interacting particle pictur…
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic fine structure and the excitonic binding energy. Our calculations show that $c$-plane InGaN/GaN quantum dots are ideal candidates for high temperature entangled photon emission as long as the underlying $C_{3v}$-symmetry is preserved. However, when assuming random alloy fluctuations in the dot, our atomistic calculations reveal that while the large excitonic…
In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration interaction approach reveal that exciton complexes containing holes interacting with two or more electrons exhibit fairly large antibinding energies. This effect is found to be the hallmark of the type-II confinement. In addition, an approximate self-consistent solution of the multi-exciton problem allows us to explain two pronounced phenomena: the blue-shift of …
A transition from a cylindrical quantum dot to a highly elongated quantum dash is theoretically studied here with an atomistic approach combining empirical tight binding for single particle states and configuration interaction method for excitonic properties. Large nanostructure shape anisotropy leads to a peculiar trend of the bright exciton splitting, which at certain point is quenched with further shape elongation, contradicting predictions of simplified models. Moreover strong shape elongation promotes pronounced optical activity of the dark exciton, that can reach substantial $1\%$ fracti…
Coherent interaction between matter and periodic light field induces both optical Stark effect (OSE) and Bloch-Siegert shift (BSS). Observing the BSS has been historically challenging, not only because it is weak but it is often accompanied by a much stronger OSE. Herein, by controlling the light helicity, we can largely restrict the OSE and BSS to different spin-transitions in CsPbI3 perovskite quantum dots, achieving room-temperature BSS as strong as 4 meV with near-infrared pulses. The ratio between the BSS and OSE magnitudes is however systematically higher than the prediction by the non-i…
Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer cove…
We show that two initially non-resonant quantum dots may be brought into resonance by the application of a single detuned laser. This allows for control of the inter-dot interactions and the generation of highly entangled excitonic states on the picosecond timescale. Along with arbitrary single qubit manipulations, this system would be sufficient for the demonstration of a prototype excitonic quantum computer.
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the confi…
Recently, atomically well-defined cove-shaped graphene nanoribbons have been obtained using bottom-up synthesis. These nanoribbons have an optical gap in the visible range of the spectrum which make them candidates for donor materials in photovoltaic devices. From the atomistic point of view, their electronic and optical properties are not clearly understood. Therefore, in this work we carry out ab-initio density functional theory calculations combine with many-body perturbation formalism to study their electronic and optical properties. Through the comparison with experimental measurements, w…
Doping a semiconductor quantum dot with just a single impurity atom can completely transform its physical properties. Here, we report and analyze the magnetic circular dichroism (MCD) spectra of colloidal CdSe quantum dot samples containing on average fewer than one Mn2+ per quantum dot. Even at this sub-single-dopant level, the low-temperature low-field data are dominated by impurity-induced Zeeman splittings caused by dopant-carrier sp-d exchange. Unlike in more heavily doped quantum dots, however, the MCD intensity at the first CdSe exciton shows a field-induced sign flip as the field stren…
The low-energy bands of twisted bilayer graphene form Dirac cones with approximate electron-hole symmetry at small rotation angles. These crossings are protected by the emergent symmetries of moiré patterns, conferring a topological character to the bands. Strain accumulated between layers (heterostrain) shifts the Dirac points both in energy and momentum. The overlap of conduction and valence bands favors an excitonic instability of the Fermi surface close to the neutrality point. The spontaneous condensation of electron-hole pairs breaks time reversal symmetry and the separate conservation o…
The structure of the ground state exciton of Cd(Se,Te) quantum dots embedded in ZnTe matrix is studied experimentally using photoluminescence spectroscopy and theoretically using ${\bf k}\cdot{\bf p}$ and configuration interaction methods. The experiments reveal a considerable reduction of fine-structure splitting energy of the exciton with increase of Se content in the dots. That effect is interpreted by theoretical calculations to originate due to the transition from spatially direct (type-I) to indirect (type-II) transition between electrons and holes in the dot induced by increase of Se. T…
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, luminescence polarization along the growth axis has been observed revealing the presence of shear components of the deformation tensor out of the growth plane. Resonant luminescence experiments allowed deter…
We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71…
In this paper we investigate an implementation of a quantum gate for quantum information processing in a system of quantum dots in an optical cavity manipulated by collinear laser fields. For simplicity we give theoretical and numerical results only for simulations of two quantum dots in a cavity interacting with two collinear fields. Extension to the system of many quantum dots in a cavity can be done in similar manner as the two dots system. It is shown that due to the collinear fields are used, a two qubit gate operation can be acheived by choosing properly detunings and amplitudes of the c…
We study the size-dependent exciton fine structure in monolayer black phosphorus quantum dots (BPQDs) deposited on different substrates (isolated, Si and SiO$_2$) using a combination of tight-binding method to calculate the single-particle states, and the configuration interaction formalism to determine the excitonic spectrum. We demonstrate that the substrate plays a dramatic role on the excitonic gaps and excitonic spectrum of the QDs. For reasonably high dielectric constants ($\varepsilon_{sub} \sim \varepsilon_{Si} = 11.7 \varepsilon_0$), the excitonic gap can be described by a single powe…
The intrinsic fine structure splittings (FSSs) of the exciton states of semiconductor quantum dots (QDs) are known to be the major obstacle for realizing the QD-based entangled photon pair emitters. In this study, we present a theoretical and computational investigation of the excitonic fine structures of droplet-epitaxial (DE) GaAs/AlGaAs QDs under the electro-mechanical control of micro-machined piezoelectricity actuators. From the group theory analysis with numerical confirmation based on the developed exciton theory, we reveal the general principle for the optimal design of micro-machined …
The mechanism of Stokes shift in semiconductor quantum dots is investigated by calculating the energy of the excitonic states. We have taken into account all possible contributions to the total electronic energy in the dot, i.e, dielectric mismatch between dot and surrounding medium, the effects of finite barrier height and electron-hole exchange interaction. The Stokes shift is calculated as a function of radius of dot and compared with experimental data on two different semiconductor based quantum dots. These results provide evidence for exchange splitting of excitonic states, as the mechani…
Numerical calculations of excitonic properties of novel nanostructures, such as nanowire and crystal phase quantum dots, must combine atomistic accuracy with an approachable computational complexity. The key difficulty comes from the fact that excitonic spectra details arise from atomicscale contributions that must be integrated over a large spatial domain containing a million and more of atoms. In this work we present a step-by-step solution to this problem: combined empirical tight-binding and configuration interaction scheme that unites linearly scaling computational time with the essential…
We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more than two nominally highly symmetric QDs. For each, the effect of the interaction between QDs is studied by characterizing a large number of QDs through photoluminescence spectroscopy. A clear red-shift of the emission energy is observed together with a change in the orientation of its polarization, suggesting an increasing interaction between the QD…
We analyse various phonon-assisted mechanisms which contribute to the decoherence of excitonic qubits in quantum dot systems coupled by the Förster-type transfer process. We show the significant loss of coherence accompanied by dissipation due to charge carrier oscillations between qubit states by using a model of one-phonon assisted Förster-type transfer process. We obtain explicit expressions for the relaxation and dephasing times for excitonic qubits interacting with acoustic phonons via both deformation potential and piezoelectric coupling. We compare the decoherence times of the GaAs/AlGa…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $μ$m) with ultra-small excitonic fine-structure splitting of ~2 $μ$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($μ$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below…
We suggest that physics underlying the recently observed removal of sublattice and spin degeneracies in graphene in a strong magnetic field describes a phase transition connected with the generation of excitonic and spin gaps. The strong-coupling regime is described using a phenomenological model with enhanced Zeeman splitting (spin gap) and excitonic gaps. The experimental form of the Hall conductivity $σ_{xy}$ with the additional $ν= 0, \pm 1$ plateaus is reproduced. The form of $σ_{xy}$ in the case of a strong-coupling regime with no enhanced Zeeman splitting is also discussed.
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the qu…
With the ever-growing interest in quantum computing, understanding the behaviour of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot of hexagonal Boron Nitride. We begin by outlining the adequate basis functions to describe a particle in a triangular enclosure, analyzing their degeneracy and symmetries. Afterwards, we discuss the excitonic hamiltonian inside the quantum dot and study the influence of the quantum dot dimensions on the excitonic states.
A sufficiently strong Coulomb interaction may open an excitonic fermion gap and thus drive a semimetal-insulator transition in graphene. In this paper, we study the Eliashberg theory of excitonic transition by coupling the fermion gap equation self-consistently to the equation of vacuum polarization function. Including the fermion gap into polarization function increases the effective strength of Coulomb interaction because it reduces the screening effects due to the collective particle-hole excitations. Although this procedure does not change the critical point, it leads to a significant enha…
We consider the excitonic effects on the thermal properties in the AB-stacked bilayer graphene. The calculations are based on the bilayer generalization of the usual Hubbard model at the half-filling. The full interaction bandwidth is used without any low-energy assumption. We obtain the unusually high values for the electronic figure of merit even at the room-temperatures which is very promising for the thermoelectric applications of the AB-bilayer structure. We discuss the effects of the interlayer Coulomb interaction and temperature on different thermal parameters in the bilayer graphene an…
The band modulation of the silicene and graphene quantum dots is investigated by a first-principles method. This study includes the ordinary silicene and graphene quantum dots and the embedded quantum dots in the hydrogenated silicene and graphene. The shapes and sizes of quantum dots are recognized as important factors for the electronic properties. We studied several types of quantum dots: triangular, parallelogram, rectangular, hexagonal dots. It demonstrates the energy gap of the quantum dot can be tuned by the dot size, the larger of the dot the smaller the energy gap. Moreover, the shape…
We predict the formation and superfluidity of polaritons in an optical microcavity formed by excitons in gapped graphene embedded there and microcavity photons. The Rabi splitting related to the creation of an exciton in a graphene layer in the presence of the band gap is obtained. The analysis of collective excitations as well as the sound velocity is presented. We show that the superfluid density and temperature of the Kosterlitz-Thouless phase transition are decreasing functions of the energy gap.
The possibility of excitonic condensation in a recently proposed electrically biased double-layer graphene system is studied theoretically. The main emphasis is put on obtaining a reliable analytical estimate for the transition temperature into the excitonic state. As in a double-layer graphene system the total number of fermionic "flavors" is equal to N=8 due to two projections of spin, two valleys, and two layers, the large-$N$ approximation appears to be especially suitable for theoretical investigation of the system. On the other hand, the large number of flavors makes screening of the bar…
Higher harmonic generation in plane graphene quantum dots initiated by intense coherent radiation is investigated, using dynamical Hartree-Fock mean-field theory. A microscopic theory describing the extreme nonlinear optical response of plane graphene quantum dots is developed. The closed set of differential equations for the single-particle density matrix at the graphene quantum dots-strong laser field multiphoton interaction is solved numerically. The obtained solutions indicate the significance of the type of edge and lateral size, and bandgap and laser field strength in the high harmonic g…
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
Graphene, a single sheet of graphite with honeycomb lattice structure, has massless carriers with tunable density and polarity. We investigate the ground state phase diagram of two graphene sheets (embedded in a dielectric) separated by distance $d$ where the top layer has electrons and the bottom layer has holes, using mean-field theory. We find that a uniform excitonic condensate occurs over a large range of carrier densities and is weakly dependent on the relative orientation of the two sheets. We obtain the excitonic gap, quasiparticle energy and the density of states. We show that both, t…
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of W…
In this paper we analyse the electronic properties of Dirac electrons in finite-size ribbons and in circular and hexagonal quantum dots made of graphene.
We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and here we provide a theoretical estimate of relaxations times. By comparing a model with pure edge confinement to a model with electrostatic confinement, we find that the latter features much larger relaxation times. Interestingly, relaxation times in electrostatically defined quantum dots are predicted to exceed the experimentally observed lower bound of ~10…
We report a systematic study of the optical conductivity of twisted bilayer graphene (tBLG) across a large energy range (1.2 eV to 5.6 eV) for various twist angles, combined with first-principles calculations. At previously unexplored high energies, our data show signatures of multiple van Hove singularities (vHSs) in the tBLG bands, as well as the nonlinearity of the single layer graphene bands and their electron-hole asymmetry. Our data also suggest that excitonic effects play a vital role in the optical spectra of tBLG. Including electron-hole interactions in first-principles calculations i…
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
