Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band

We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL) these QDs can be employed for the manufacturing of single-photon sources (SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by determining the radiative and non-radiative decay rate under variation of the optical density of states at the position of the QD as proposed and applied in J. Johansen et al. Phys. Rev. B 77, 073303 (2008) for InGaAs…

基于GaAs衬底的电信波段量子点作为可集成的高性能单光子源

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

研究了基于GaAs衬底在电信O和C波段发射的MBE生长量子点，实现了低线宽、低精细结构分裂和低g2(0)值，展示了其作为可集成高性能单光子源的潜力。

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, em…

基于稳定重掺杂PbS胶体量子点的红外光通信波段单激子增益与受激发射

Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

本研究针对红外铅硫族胶体量子点光学增益阈值高的问题，采用稳定电子掺杂PbS胶体量子点，实现了室温光通信波段可调谐的红外受激发射，增益阈值达单激子区间，大幅降低阈值水平。

电信C波段量子点的强场调谐与电荷态控制

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

本研究通过强场调谐和电荷态控制实现了电信C波段量子点的单光子发射，为长距离量子通信提供了新途径。

Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the…