In a quantum dot with dozens of electrons, an approximation beyond Tamm-Dankoff is used to construct the quantum states with an additional electron-hole pair, i.e. the "excitonic" states. The lowest states mimic the non-interacting spectrum, but with excitation gaps renormalized by Coulomb interactions. At higher excitation energies, the computed density of energy levels shows an exponential increase with energy. In the interband absorption, we found a background level in the quasicontinuum of states rising linearly with the excitation energy. Above this background, there are distinct peaks related to single resonances or to groups of many states with small interband dipole moments.
We present a theory of excitonic processes in gate controlled graphene quantum dots. The dependence of the energy gap on shape, size and edge for graphene quantum dots with up to a million atoms is predicted. Using a combination of tight-binding, Hartree-Fock and configuration interaction methods, we show that triangular graphene quantum dots with zigzag edges exhibit optical transitions simultaneously in the THz, visible and UV spectral ranges, determined by strong electron-electron and excitonic interactions. The relationship between optical properties and finite magnetic moment and charge d…
Formation of excitonic states in quantum dots of nitride based III-V semiconductors GaN and AlN including coulomb and exchange interactions are investigated. Dark exciton formation is found to occur for both GaN quantum dots(QDs) with wurtzite structure having positive crystal field splitting and GaN and AlN QDs with zero crystal field splitting with a transition from dark to bright exciton at about 40Å. In wurtzite AlN QDs with negative crystal field splitting the splitting between the dark and bright excitonic states is very small and vanishes at about 15Å.
Dielectric screening is greatly important to an accurate calculation of the exciton binding energies in two-dimensional materials. In this work, we calculate the dielectric function and 2D polarizability of multilayer (up to three) phosphorene sheets using Density Functional Theory. The 2D polarizabilities are then used in the dielectric screening of the excitonic interaction in multilayer phosphorene quantum dots. In the limit of large quantum dots, excitonic gaps are shown to exhibit very good agreement with state-of-the-art measurements of the optical gaps of multilayer phosphorene sheets d…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy…
We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uni-axial stress control. In the formalisms, stressing a photo-excited quantum dot is equivalent creating a pseudo-magnetic field that is directly coupled to the pseudo-spin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band-mixing of exciton that is especially sensitive to …
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group…
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to…
Second order perturbation theory and a Lipkin-Nogami scheme combined with an exact Monte Carlo projection after variation are applied to compute the ground-state energy of $6\le N\le 210$ electron-hole pairs confined in a parabolic two-dimensional quantum dot. The energy shows nice scaling properties as N or the confinement strength is varied. A crossover from the high-density electron-hole phase to the BCS excitonic phase is found at a density which is roughly four times the close-packing density of excitons.
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic fine structure and the excitonic binding energy. Our calculations show that $c$-plane InGaN/GaN quantum dots are ideal candidates for high temperature entangled photon emission as long as the underlying $C_{3v}$-symmetry is preserved. However, when assuming random alloy fluctuations in the dot, our atomistic calculations reveal that while the large excitonic…
In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration interaction approach reveal that exciton complexes containing holes interacting with two or more electrons exhibit fairly large antibinding energies. This effect is found to be the hallmark of the type-II confinement. In addition, an approximate self-consistent solution of the multi-exciton problem allows us to explain two pronounced phenomena: the blue-shift of …
A transition from a cylindrical quantum dot to a highly elongated quantum dash is theoretically studied here with an atomistic approach combining empirical tight binding for single particle states and configuration interaction method for excitonic properties. Large nanostructure shape anisotropy leads to a peculiar trend of the bright exciton splitting, which at certain point is quenched with further shape elongation, contradicting predictions of simplified models. Moreover strong shape elongation promotes pronounced optical activity of the dark exciton, that can reach substantial $1\%$ fracti…
Coherent interaction between matter and periodic light field induces both optical Stark effect (OSE) and Bloch-Siegert shift (BSS). Observing the BSS has been historically challenging, not only because it is weak but it is often accompanied by a much stronger OSE. Herein, by controlling the light helicity, we can largely restrict the OSE and BSS to different spin-transitions in CsPbI3 perovskite quantum dots, achieving room-temperature BSS as strong as 4 meV with near-infrared pulses. The ratio between the BSS and OSE magnitudes is however systematically higher than the prediction by the non-i…
Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer cove…
We show that two initially non-resonant quantum dots may be brought into resonance by the application of a single detuned laser. This allows for control of the inter-dot interactions and the generation of highly entangled excitonic states on the picosecond timescale. Along with arbitrary single qubit manipulations, this system would be sufficient for the demonstration of a prototype excitonic quantum computer.
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the confi…
Doping a semiconductor quantum dot with just a single impurity atom can completely transform its physical properties. Here, we report and analyze the magnetic circular dichroism (MCD) spectra of colloidal CdSe quantum dot samples containing on average fewer than one Mn2+ per quantum dot. Even at this sub-single-dopant level, the low-temperature low-field data are dominated by impurity-induced Zeeman splittings caused by dopant-carrier sp-d exchange. Unlike in more heavily doped quantum dots, however, the MCD intensity at the first CdSe exciton shows a field-induced sign flip as the field stren…
The structure of the ground state exciton of Cd(Se,Te) quantum dots embedded in ZnTe matrix is studied experimentally using photoluminescence spectroscopy and theoretically using ${\bf k}\cdot{\bf p}$ and configuration interaction methods. The experiments reveal a considerable reduction of fine-structure splitting energy of the exciton with increase of Se content in the dots. That effect is interpreted by theoretical calculations to originate due to the transition from spatially direct (type-I) to indirect (type-II) transition between electrons and holes in the dot induced by increase of Se. T…
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, luminescence polarization along the growth axis has been observed revealing the presence of shear components of the deformation tensor out of the growth plane. Resonant luminescence experiments allowed deter…
We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71…
In this paper we investigate an implementation of a quantum gate for quantum information processing in a system of quantum dots in an optical cavity manipulated by collinear laser fields. For simplicity we give theoretical and numerical results only for simulations of two quantum dots in a cavity interacting with two collinear fields. Extension to the system of many quantum dots in a cavity can be done in similar manner as the two dots system. It is shown that due to the collinear fields are used, a two qubit gate operation can be acheived by choosing properly detunings and amplitudes of the c…
We study the size-dependent exciton fine structure in monolayer black phosphorus quantum dots (BPQDs) deposited on different substrates (isolated, Si and SiO$_2$) using a combination of tight-binding method to calculate the single-particle states, and the configuration interaction formalism to determine the excitonic spectrum. We demonstrate that the substrate plays a dramatic role on the excitonic gaps and excitonic spectrum of the QDs. For reasonably high dielectric constants ($\varepsilon_{sub} \sim \varepsilon_{Si} = 11.7 \varepsilon_0$), the excitonic gap can be described by a single powe…
The intrinsic fine structure splittings (FSSs) of the exciton states of semiconductor quantum dots (QDs) are known to be the major obstacle for realizing the QD-based entangled photon pair emitters. In this study, we present a theoretical and computational investigation of the excitonic fine structures of droplet-epitaxial (DE) GaAs/AlGaAs QDs under the electro-mechanical control of micro-machined piezoelectricity actuators. From the group theory analysis with numerical confirmation based on the developed exciton theory, we reveal the general principle for the optimal design of micro-machined …
The mechanism of Stokes shift in semiconductor quantum dots is investigated by calculating the energy of the excitonic states. We have taken into account all possible contributions to the total electronic energy in the dot, i.e, dielectric mismatch between dot and surrounding medium, the effects of finite barrier height and electron-hole exchange interaction. The Stokes shift is calculated as a function of radius of dot and compared with experimental data on two different semiconductor based quantum dots. These results provide evidence for exchange splitting of excitonic states, as the mechani…
Numerical calculations of excitonic properties of novel nanostructures, such as nanowire and crystal phase quantum dots, must combine atomistic accuracy with an approachable computational complexity. The key difficulty comes from the fact that excitonic spectra details arise from atomicscale contributions that must be integrated over a large spatial domain containing a million and more of atoms. In this work we present a step-by-step solution to this problem: combined empirical tight-binding and configuration interaction scheme that unites linearly scaling computational time with the essential…
We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more than two nominally highly symmetric QDs. For each, the effect of the interaction between QDs is studied by characterizing a large number of QDs through photoluminescence spectroscopy. A clear red-shift of the emission energy is observed together with a change in the orientation of its polarization, suggesting an increasing interaction between the QD…
We analyse various phonon-assisted mechanisms which contribute to the decoherence of excitonic qubits in quantum dot systems coupled by the Förster-type transfer process. We show the significant loss of coherence accompanied by dissipation due to charge carrier oscillations between qubit states by using a model of one-phonon assisted Förster-type transfer process. We obtain explicit expressions for the relaxation and dephasing times for excitonic qubits interacting with acoustic phonons via both deformation potential and piezoelectric coupling. We compare the decoherence times of the GaAs/AlGa…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $μ$m) with ultra-small excitonic fine-structure splitting of ~2 $μ$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($μ$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below…
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the qu…
With the ever-growing interest in quantum computing, understanding the behaviour of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot of hexagonal Boron Nitride. We begin by outlining the adequate basis functions to describe a particle in a triangular enclosure, analyzing their degeneracy and symmetries. Afterwards, we discuss the excitonic hamiltonian inside the quantum dot and study the influence of the quantum dot dimensions on the excitonic states.
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
By a combination of Hartree-Fock simulations, exact diagonalization, and perturbative calculations, we investigate the ground-state properties of disorder-free circular quantum dots formed in a graphene monolayer. Taking the reference chemical potential at the Dirac point, we study N \leq 15 interacting particles, where the fine structure constant α parametrizes the Coulomb interaction. We explore three different theoretical concepts: (i) Sucher's positive projection ("no-pair") approach, (ii) a more general Hamiltonian conserving both N and the number of additional electron-hole pairs, and (i…
We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing bias demonstrate strong coupling between InAs quantum dots (0D) and triangular GaAs quantum well (2D). Coherent resonant tunneling in this 0D-2D heterostructure establishes the momentum space narrowing of excitonic Bose-Einstein Condensation. Drastic increase of indirect exciton densities below 70 K reveal that excitonic wave functions anchored with each InAs…
Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear exci…
Recently lead halide nanocrystals (quantum dots) have been reported with potential for photovoltaic and optoelectronic applications due to their excellent luminescent properties. Herein excitonic photoluminescence (PL) excited by two-photon absorption in perovskite CsPbBr3 quantum dots (QDs) have been studied across a broad temperature range from 80K to 380K. Two-photon absorption has been investigated with absorption coefficient up to 0.085 cm/GW at room temperature. Moreover, the photoluminescence excited by two-photon absorption shows a linear blue-shift (0.25meV/K) below temperature of ~22…
We present studies on Coulomb interactions in single self-assembled CdTe quantum dots. We use a field effect structure to tune the charge state of the dot and investigate the impact of the charge state on carrier wave functions. The analysis of the quantum confined Stark shifts of four excitonic complexes allows us to conclude that the hole wave function is softer than electron wave function, i. e. it is subject to stronger modifications upon changing of the dot charge state. These conclusions are corroborated by time-resolved photoluminescence studies of recombination lifetimes of different e…
School of Materials Science and Engineering, Ocean University of China（中国海洋大学材料科学与工程学院）；University of Shanghai for Science and Technology（上海理工大学）；South China Normal University（华南师范大学）；Sichuan University（四川大学）
he properties of excitons formed in spherical quantum dots are studied using the $\mathbf{k}\cdot\mathbf{p}$ method within the Hartree approximation. The spherical quantum dots considered have a central core and several concentric layers of different semiconductor materials that are modeled as a succession of potential wells and barriers. The $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian and the Coulomb equations for the electron-hole pair are solved using a self-consistent iterative method. The calculation of the spectrum of the empty quantum dot and the electron-hole pair is performed by means of …
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $μ$-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interacti…
Anderson impurity model for semiconductor quantum dot is extended to take into account both particle and hole branches of charge excitations. It is shown that in dots with even number of electrons where the Kondo effect is absent in the ground state, novel midgap excitonic states emerge in the energy spectrum due to Kondo-type shake-up processes. The relevance of the model to rare earth ions adsorbed on metallic surfaces is discussed.
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At ap…
The separation dependence of the interaction between two resonant groups of CdSe/ZnS nanocrystallite quantum dots is studied at room temperature. A near-field scanning optical microscope is used to bring a group of mono-disperse ~6.5 nm diameter nanocrystallite quantum dots which are attached to the microscope probe, into close proximity of `~8.5 nm diameter group of nanocrystallite quantum dots which are deposited on a solid immersion lens. Information extracted from photoluminescence, photoluminescence excitation and absorption curves as well as numerical calculations of the energy levels, s…
We propose an all-optical implementation of quantum-information processing in semiconductor quantum dots, where electron-hole excitations (excitons) serve as the computational degrees of freedom (qubits). The strong dot confinement leads to a strong renormalization of excitonic states, which, in analogy to NMR-based implementations of quantum-information processing, can be exploited for performing conditional and unconditional qubit operations.
The role of non-equilibrium effects in the conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitonic-like resonances. They change qualitatively the low temperature properties of the system. We analyze by quantum Monte Carlo methods the renormalization of the effective capacitance and the gate-voltage dependent conductance. Experimental relevance is discussed.
We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a non-local description of the response function to a spatially modulated electro-magnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found in agreement with recently published experiments.
The excitonic fine structure plays a key role for the quantum light generated by semiconductor quantum dots, both for entangled photon pairs and single photons. Controlling the excitonic fine structure has been demonstrated using electric, magnetic, or strain fields, but not for quantum dots in optical cavities, a key requirement to obtain high source efficiency and near-unity photon indistinguishability. Here, we demonstrate the control of the fine structure splitting for quantum dots embedded in micropillar cavities. We propose a scheme based on remote electrical contacts connected to the pi…
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.
We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.
We investigate the optical response of quantum dot molecules coherently driven by polarized laser light. Our description includes the splitting in excitonic levels caused by isotropic and anisotropic exchange interactions. We consider interdot transitions mediated by hole tunneling between states with the same total angular momentum and between bright and dark exciton states, as allowed by spin-flip hopping between the dots in the molecule. Using realistic experimental parameters we demonstrate that the excitonic states coupled by tunneling exhibit a rich and controllable optical response. We …
We have found a novel mechanism of spectral broadening and dephasing in quantum dots (QDs) due to the coupling to longitudinal-optical (LO) phonons. In theory, this mechanism comes into play only if the complete manifold of exciton levels (including those in the wetting-layer continuum) is taken into account. We demonstrate this nontrivial dephasing in different types of QDs, using the exactly solvable quadratic coupling model, here generalized to an arbitrary number of excitonic states.
A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon coupling, and four approaches are explored. The results can be implemented in quantum dot solids to mitigate polaronic effects and increase the lifetime of coherent excitonic superpositions. It is demonstrated that such designs can also be used to alter the shape of the spectral density for reorganization so as to reduce the rates of both decoherence and dissip…
The optical properties of quantum dots embedded in a catalytically grown semiconductor nanowire are studied theoretically. In comparison to dots in a bulk environment, the excitonic absorption is strongly modified by the one-dimensional character of the nanowire phonon spectrum. In addition to pronounced satellite peaks due to phonon-assisted absorption, we find a finite width of the zero-phonon line already in the lowest-order calculation.
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
Within the Floquet theory of periodically driven quantum systems, we demonstrate that a high-frequency electromagnetic field can be used as an effective tool to control excitonic properties of semiconductor quantum dots (QDs). It is shown, particularly, that the field both decreases the exciton binding energy and dynamically stabilizes the exciton, increasing its radiative lifetime. The developed theory can serve as a basis for the ultrafast method to tune spectral characteristics of the QD-based photon emitters by a high-frequency field.
We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. Resonant regime with picoseconde laser excitation is realized by embedding the quantum dots in a waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide. This is due to a \emph{slow light effect} ($c/v_{g}\simeq 3000$), occuring when an intense resonant pulse propagates in a medium. The resonant control of the quantum dot fundamental trans…
