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arXiv 1003.2842cond-mat.mes-hallcond-mat.mtrl-sci
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薄膜存储材料的膜导纳系统模型

A Memadmittance Systems Model for Thin Film Memory Materials

Blaise Mouttet

摘要:

1971年,忆阻器最初被假设为一种新的非线性电路元件,它与电流和电压的时间积分有关。最近,HPLabs的研究人员将理论忆阻器概念与TiO(2-x)薄膜的电阻切换行为联系起来。然而,已经发现表现出记忆电阻效应的各种其它薄膜材料也表现出记忆电容效应。本文提出了一种记忆导纳(记忆导纳)系统模型,试图巩固与忆阻器模型的记忆电容效应。该模型产生的方程有关的电阻开关薄膜中的导电桥的横截面积的电容的变化。

英文摘要:

In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which attempts to consolidate the memory capacitance effects with the memristor model. The model produces equations relating the cross-sectional area of conductive bridges in resistive switching films to shifts in capacitance.

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